Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the Fabrication of ITO Film by Discharge Plasma

FTS 방식에 의한 ITO Film 제작에 관한 연구

  • Ma, H.B. (Dept. of Electrical Eng. Pusan National University) ;
  • Ko, J.S. (Dept. of Electrical Eng. Pusan National University) ;
  • Son, J.B. (Dept. of Electrical Eng. Pusan National University) ;
  • Park, C.S. (Dept. of Electrical Eng. Pusan National University) ;
  • Park, C.H. (Dept. of Electrical Eng. Pusan National University) ;
  • Cho, J.S. (Dept. of Electrical Eng. Pusan National University)
  • Published : 1998.07.20
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Abstract

ITO(Iridium-Tin Oxide) thin film, as discharge electrodes in AC PDP, should have low resistivity and high transparency. Regarded as a high deposition rate method, the ITO thin film fabricated by the facing target sputtering system has been studied in this paper. The electrical property of the ITO film deposited below $150^{\circ}C$ is not satisfied. The SEM pictures show that the ITO films deposited below $150^{\circ}C$ are amorphous. After being annealed the amorphous ITO films become crystalline, and for this reason, the electrical property of amorphous ITO films can be effectively improved by annealing process. An ITO film with the resistivity as low as $1.99{\times}10^{-4}$ and transparency above 85% has be gotten after vacuum annealing at $300^{\circ}C$ for 2 hours while deposited at $75^{\circ}C$. The corresponding deposition rate is $220{\AA}/min$.

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