• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.245-245
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• 2016

본 연구에서는 선형 대향 타겟 스퍼터 (Linear Facing Target Sputtering: LFTS) 시스템을 이용하여 ITO와 Ti doped $In_2O_3$ (TIO) 타겟을 Co-sputtering한 InSnTiO 투명 전극의 전기적, 광학적 특성을 연구하였다. InSnTiO 투명전극의 전기/광학적 및 구조적 특성은 Hall measurement, UV/Vis spectrometry, X-ray Diffraciton 분석법을 통해 최적화 하였고, DC power, substrate to target distance (TSD), target to target distance (TTD), ambient treatment 변수 조절을 통해 최적화된 LFTS InSnTiO 투명전극을 제작하였다. LFTS 공정을 이용한 InSnTiO 투명전극의 성막 공정 중 DC파워와 공정압력 변화에 따른 구조적, 표면적 특성 변화는 Field-Emission Scanning Electron Microscopy (FE-SEM) 과 X-ray Diffractometer (XRD) 분석을 통해 관찰하였다. 이렇게 증착된 InSnTiO 투명전극은 급속열처리 시스템으로 (Rapid Thermal Annealing system) 후열처리를 진행하여 투과도의 향상과 면저항의 감소를 확인하였다. 본 연구에서는 다양한 분석을 통해 Co-sputtering한 InSnTiO 박막의 특성과 다양한 장점을 소개한다.

• Journal of Surface Science and Engineering
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• v.41 no.5
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• pp.199-204
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• 2008

Indium tin oxide (ITO) has been commonly used as an anode for organic light emitting diode (OLED), because of its relatively high work function, high transmittance, and low resistance. The ITO was mostly deposited by capacitive type DC or RF sputtering. In this study we introduced a new facing target sputtering method. On applying this new sputtering method, the effect of fundamental deposition parameters such as substrate heating and post etching were investigated in relation to the resultant I-V-L characteristics of OLED. Three kinds of ITOs deposited at room temperature, at $400^{\circ}C$ and at $400^{\circ}C$ with after surface modification by $O_2$ plasma etching were compared. The OLED on ITO deposited with substrate heating and followed by etching showed better I-V-L characteristics, which starts to emit light at 4 volts and has luminescence of $65\;cd/m^2$ at 9 volts. The better I-V-L characteristics were ascribed to the relevant surface roughness with uniform micro-extrusions and to the equi-axed micromorphology of ITO surface.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.676-680
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• 2016

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at $400^{\circ}C$. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of $12.91cm^2/V.s$, a low swing of 0.80 V/decade, $V_{th}$ of 5.78 V, and a high $I_{on/off}$ ratio of $2.52{\times}10^6$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.31-32
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• 2007

저온 공정이 가능한 대향타겟식 스퍼터 (Facing Target Sputtering, FTS) 를 이용하여 Flexible display에 적용 가능한 polymer 기판위에 산소 가스 유량비 변화에 따라 ITO를 합성하였다. 산소의 유량이 2.8 sccm 일 때 가시광 영역에서 85%이상의 투과도와 2.26 ${\sim}$ 10$^{-4}$ ${\Omega}$ cm의 가장 낮은 전기적 특성을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.613-616
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• 2008

We report on electrical and optical properties of flexible ITO electrode grown on PET substrate using a specially designed roll-to-roll facing target sputtering (R2R FTS) system at room temperature without conventional cooling drum. Due to effective confinement of high density plasma between ITO targets, we can grow a flexible ITO electrode without cooling drum at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.252-252
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• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.620-623
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• 2004

In this study, the discharge characteristic of FTS (Facing Targets Sputtering) apparatus was investigated using metal target paramagnetic and ceramic targets such as Zn, Al, $ZnO:Al(Al_2O_3)$, ITO. Threshold voltage and stable stage of discharge show different with target species. Compare with commercial sputtering apparatus, the FTS apparatus is a high-speed sputter method that promotes ionization of sputter gas by screw and reciprocate moving high-speed ${\gamma}$electrons which arrays two targets facing each other, inserts plasma arresting magnetic field to the parallel direction of the center axis of both targets, discharged from targets and accelerated at the cathode falling area. Especially, we notice that the FTS method using ceramic target has stable discharge characteristic even by DC power source.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.1-5
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• 2012

Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.