한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제22권5호
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  • Pages.425-430
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  • 2009
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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플렉서블 디스플레이용 저온공정을 갖는 대향 타겟식 스퍼터링 장치를 이용한 ZrO2 가스 차단막의 특성

Properties of ZrO2 Gas Barrier Film using Facing Target Sputtering System with Low Temperature Deposition Process for Flexible Displays

  • 김지환 (대구가톨릭대학교 전자공학과) ;
  • 조도현 (대구가톨릭대학교 전자공학과) ;
  • 손선영 (대구가톨릭대학교 전자공학과) ;
  • 김화민 (대구가톨릭대학교 전자공학과) ;
  • 김종재 (대구가톨릭대학교 전자공학과)
  • 발행 : 2009.05.01
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초록

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

키워드

참고문헌

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피인용 문헌

  1. Process Characteristics of SiOxand SiOxNyFilms on a Gas Barrier Layer using Facing Target Sputtering (FTS) System vol.22, pp.12, 2009, https://doi.org/10.4313/JKEM.2009.22.12.1028