• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Journal of Astronomy and Space Sciences
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• v.20 no.4
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• pp.327-338
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• 2003

The aim of this paper is to describe the results of the study on the extreme-ultra-violet (EUV) solar telescope, which is designed to. a possible satellite mission. Since the EUV band can not be observed on the ground, the observation in EUV should be performed in space using a satellite or a rocket. Design of the Extreme-Ultra-Violet solar Telescope (BUVT) in this study is based on "Designing a small-sized engineering model of solar EUV telescope for a Korean satellite" (Han et al. 2001). Our EUVT design is satisfied with the requirements for a satellite in size and input voltage. The major goal of the study is to confirm if we can detect the specific wavelength (58.4nm to 62.9nm) with the EUVT. We describe re-designing of the EUVT to decrease a shelter ratio. Also we describe the technics in the optic system and the detector, which were used to manufacture the EUVT. We explain the detective program, which is to calculate the amount of the solar radiation, and the image data processing system.ng system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.1-5
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• 2006

At-wavelength inspection system of extreme Ultra-violet lithography was developed and the inspection results were compared with the optical mask inspection system by cross correlation experiments. In at-wavelength EUV mask inspection system, a raster scan of focused euv light is used to illuminate euv light to mask blank and specularly and non-specularly reflected euv light are detected by photo diode and microchannel plate. The cross correlation results between at-wavelength inspection tool and optical inspection tool shows strong correlation. Far-field scattering fringe pattern from programmed phase and opqque defect, which were detected by phosphor plate and CCD camera shows that distinct diffraction fringes were observed with fringe spacing dependent on the defect size.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.277-280
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• 2001

국내 반도체 산업계의 메모리 반도체 생산규모는 세계 최대이지만 반도체 생산 장비는 대부분 수입에 의존하고 있다. 특히 lithography는 반도체 공정의 핵심일 뿐 아니라 반도체 기술 분야에서 국가의 총체적인 기술력을 대표한다. 2001년 7월에 과학 기술부가 나노급 lithography 장비 개발을 21세기 프론티어 사업으로 추진하기 위한 준비 작업에 착수하였다. 본 논문에서는 차세대 lithography로 채택된 EUV (Extreme Ultra Violet) lithography 장비 기술의 개요와 국내외 기술 개발 현황에 대하여 설명한다.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.40-45
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• 2003

Ru interfacial layer was inserted into Mo-on-Si interface to enhance the extreme ultra-violet (EUV) reflective multilayer properties. The stacking status and optical properties are analyzed using cross-sectional transmission electron microscope (TEM), and reflectometer. About 1.5% of maximum reflectivity can be acquired as predicted in optical simulation, which is thought to be originated from the diffusion inhibition property. Phase defect correctability of the multilayer can be enhanced by the insertion of Ru barrier layer.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.60.2-60.2
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• 2021

In this study, we determinate the differential emission measure(DEM) of solar corona using three SDO/AIA EUV channel images and three AI-generated ones. To generate the AI-generated images, we apply a deep learning model based on multi-layer perceptrons by assuming that all pixels in solar EUV images are independent of one another. For the input data, we use three SDO/AIA EUV channels (171, 193, and 211). For the target data, we use other three SDO/AIA EUV channels (94, 131, and 335). We train the model using 358 pairs of SDO/AIA EUV images at every 00:00 UT in 2011. We use SDO/AIA pixels within 1.2 solar radii to consider not only the solar disk but also above the limb. We apply our model to several brightening patches and loops in SDO/AIA images for the determination of DEMs. Our main results from this study are as follows. First, our model successfully generates three solar EUV channel images using the other three channel images. Second, the noises in the AI-generated EUV channel images are greatly reduced compared to the original target ones. Third, the estimated DEMs using three SDO/AIA images and three AI-generated ones are similar to those using three SDO/AIA images and three stacked (50 frames) ones. These results imply that our deep learning model is able to analyze temperature response functions of SDO/AIA channel images, showing a sufficient possibility that AI-generated data can be used for multi-wavelength studies of various scientific fields. SDO: Solar Dynamics Observatory AIA: Atmospheric Imaging Assembly EUV: Extreme Ultra Violet DEM: Diffrential Emission Measure

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of Astronomy and Space Sciences
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• v.24 no.2
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• pp.125-134
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• 2007

In this paper, we analyze the orbital variation of the Korea Multi-Purpose SATellite-1(KOMPSAT-1) in a strong space environment due to satellite drag by solar and geomagnetic activities. The satellite drag usually occurs slowly, but becomes serious satellite drag when the space environment suddenly changes via strong solar activity like a big flare eruption or coronal mass ejections(CMEs). Especially, KOMPSAT-1 as a low earth orbit satellite has a distinct increase of the drag acceleration by the variations of atmospheric friction. We consider factors of solar activity to have serious effects on the satellite drag from two points of view. One is an effect of high energy radiation when the flare occurs in the Sun. This radiation heats and expands the upper atmosphere of the Earth as the number of neutral particles is suddenly increased. The other is an effect of Joule and precipitating particle heating caused by current of plasma and precipitation of particles during geomagnetic storms by CMEs. It also affects the density of neutral particles by heating the upper atmo-sphere. We investigate the satellite drag acceleration associated with the two factors for five events selected based on solar and geomagnetic data from 2001 to 2002. The major results can be summarized as follows. First, the drag acceleration started to increase with solar EUV radiation with the best cross-correlation (r = 0.92) for 1 day delayed F10.7. Second, the drag acceleration and Dst index have similar patterns when the geomagnetic storm is dominant and the drag acceleration abruptly increases during the strong geomagnetic storm. Third, the background variation of the drag accelerations is governed by the solar radiation, while their short term (less than a day) variations is governed by geomagnetic storms.