Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.458-458
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- 2010
Role of $N_2$ flow rate on etch characteristics and variation of line edge roughness during etching of silicon nitride with extreme ultra-violet resist pattern in dual-frequency $CH_2F_2/N_2$ /Ar capacitively coupled plasmas
- Published : 2010.02.17
Abstract
The process window for the etch selectivity of silicon nitride (
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