• Ceramist
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• v.22 no.3
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• pp.218-229
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• 2019

The development of highly efficient thermally activated delayed fluorescence (TADF) materials is an active area of recent research in organic light emitting diodes (OLEDs) since the first report by Chihaya Adachi in 2011. Traditional fluorescent materials can harvest only singlet excitons, leading to the theoretically highest external quantum efficiency (EQE) of 5% with considering about 20% light out-coupling efficiency in the device. On the other hand, TADF materials can harvest both singlet and triplet excitons through reverse intersystem crossing (RISC) from triplet to singlet excited states. It could provide 100% internal quantum efficiencies (IQE), resulting in comparable high EQE to traditional rare-metal complexes (phosphorescent materials). Thanks to a lot of efforts in this field, many highly efficient TADF materials have been developed. This review focused on recent molecular design concept and optoelectronic properties of TADF materials for high efficiency and long lifetime OLED application.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.823-825
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• 2009

We present multilayer transparent electrodes (MTEs) that resulted in organic light-emitting diodes (OLEDs) with the 90 % higher forward luminous efficiency and 30% higher external quantum efficiency (EQE) than conventional ITO based devices respectively. Optimization method of such MTE structure is investigated in consideration of both injection and optical structure.

• Journal of Powder Materials
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• v.25 no.2
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• pp.132-136
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• 2018

Core/shell CdSe/ZnS quantum dots (QDs) are synthesized by a microfluidic reactor-assisted continuous reactor system. Photoluminescence and absorbance of synthesized CdSe/ZnS core/shell QDs are investigated by fluorescence spectrophotometry and online UV-Vis spectrometry. Three reaction conditions, namely; the shell coating reaction temperature, the shell coating reaction time, and the ZnS/CdSe precursor volume ratio, are combined in the synthesis process. The quantum yield of the synthesized CdSe QDs is determined for each condition. CdSe/ZnS QDs with a higher quantum yield are obtained compared to the discontinuous microfluidic reactor synthesis system. The maximum quantum efficiency is 98.3% when the reaction temperature, reaction time, and ZnS/CdSe ratio are $270^{\circ}C$, 10 s, and 0.05, respectively. Obtained results indicate that a continuous synthesis of the Core/shell CdSe/ZnS QDs with a high quantum efficiency could be achieved by isolating the reaction from the external environment.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1081-1081
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• 2002

Top emission organic EL devices were fabricated by using metal-doped cathode interface layer to achieve low drive voltages. Also, facing-targets-type sputtering was used to sputter indium-tin oxide layer on top of organic active layer. The devices fabricated in this study showed reasonably high external quantum efficiency of about 1 % which is comparable to that of bottom-emission-type devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.331-334
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• 2000

The organic electroluminescent(EL) device has gathered much interest because of its large potential in materials and simple device fabrication. We fabricated EL devices which have a blended single emitting layer containg poly(Nvinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer between polymer emitting layer and AI electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. Within the molar ratio 1:0, 2:1 and 1:1, the energy transfer was not saturated, which results in the not appearance of PVK emission in the blue region. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing with applied voltage. In the consequence of the result, the light power of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.29-30
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• 2007

In a device structure of ITO/tris(8-hydroxyquinoline) aluminum $(Alq_3)$/Al device, We investigated an the electrical characteristics of Organic Light-Emitting Diodes (OLEDs) depending on the hole-size of boat. The device was manufactured using a thermal evaporation under a base pressure of $5{\times}10^{-6}$ [Torr]. The $Alq_3$ organics were evaporated to be 100 [nm] thick at a deposition rate of $1.5[{\AA}/s]$, and in order to investigate the optimal surface roughness of $Alq_3$, the $Alq_3$ was thermally evaporated to be 0.8 [mm], 1.0 [mm], 1.5 [mm], and 3.0 [mm] as a hole-size of the boat respectively. We found that when the hole-size of the boat is 1.0 [mm], luminance and external quantum efficiency are superior.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.903-906
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• 2003

Doping a small amount of a phosphorescent dye into an organic light-emitting diodes(OLED) can lead to a significant improvement in the device properties. The fluorescent host materials like TAZ, CBP have been used, but have a problem of rapid decay of efficiency at high current densities. To alleviate this problem, phosphorescent host was introduced. The whole configuration of OELD fabricated was ITO/a-NPD(50nm)/Zn $cluster:Ir(ppy)_{3}(30nm)/BCP{(10nm)/Alq_{3}(20nm)$ /Al:Li. The OLED showed high luminance (> 50,000 $cd/m^{2}$ ) and external efficiency(5.7%). At higher current densities, rapid decay of external quantum efficiency or host emission, which was frequently observed in the fluorescent host system, were not observed.

• Current Optics and Photonics
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• v.4 no.4
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• pp.380-390
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• 2020

In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.79-86
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• 1994

Gain-guided broad-area single quantum well separate confinement heterostructure diode lasers have been fabricated from structures grown by metal organic vapor phase epitaxy. The active layer of the epi-structure is InGaAs emitting 962-965nm and the guiding layer GaAs. The channel width is fixed to 150${\mu}$m and the cavity length varys within the range of 300~800${\mu}$m. For uncoated LD's, the output power of 0.7W has been obtaained at a pulsed current level of 2A, which results about 60% external quantum efficiency. The threshold current density is 200A/cm$^{2}$ for the cavity lengths of 800.mu.m LD's. The stain effect upon the transparent current density has been observed. The internal quantum efficiency is expected to be 88% and the internal loss to be 18$cm^{-1}$. The beam divergence has been measured to be 7$^{\circ}$to lateral and 40$^{\circ}$to transverse direction. finally, 1.2W continuous-wave output power has been obtained at a current level of 2A for AR/HR coated LD's die-bonded on Cu heat-sink and cooled by TEC.