• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.679-683
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• 2005

In this study, we investigate the characteristic of the poly-Si grain and morphology influenced by XeCl excimer laser system. The stable laser beam source is basic requested; the irradiation beam through optical lens module is more important which limit the grain size smaller than $0.5{\mu}m$. The homogenization lens designs control the poly-Si grain size; so we hardly get enlarge grain size by one laser irradiation scan.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.471-472
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• 2012

• 한국광학회지
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• 제13권4호
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• pp.332-335
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• 2002

가류고무의 접착력을 향상시키기 위해서 엑시머 펄스 레이저 광으로 표면처리를 하였다. 레이저 광 조사 수의 증가에 따라, 접착력은 크게 향상되어, 100회의 조사 수에서 1500 N/m의 가장 큰 값을 얻었다. 또한 에너지 밀도 증가에 대해서도 접착력은 증가하여 에너지 밀도 176 mJ/$cm^{2}$에서 가장 큰 접착력 1500 N/m를 얻게 되었다. 에너지 밀도의 증가에 따라 접착력이 증가하는 것은 표면적의 증가와 관련이 있음을 알았다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.1857-1860
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• 2003

The ablative decomposition mechanism of PMMA(polymethyt methacrylate), PET(polyethylene terephthalate) and PC(polycarbonate) with KrF excimer laser(λ: 248nm, pulse duration: 5ns) is investigated. The UV/Vis spectrometer analysis showed that PMMA is a weak absorber and PET, PC are a strong absorber at the wavelength of 248nm. The results(surface debris, melt, etch depth, etching shape) from drilling and direct writing experiments imply that ablation mechanism of PMMA is dominated by photothermal process, while that of PET, PC are dominated by photochemical process.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.1076-1079
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• 1997

A new 3D micromachining method, called Hole Area Modulation(HAM), has been introduced and experimentally confirmed its feasibility. In this method, information on the depth of machining is converted to the sizes of small holes in the mask. The machining is carried out with a simple 2D movement of the workpiece. This method can be applied for machining various kinds of microcavities in various materials. In this paper, a mathematical model for excimer laser micromachining based on HAM and also determination of the optimal laser ablation conditions(width, Hole radius, step size, path, etc.) is completed by employing using Genetic Algorithm(GA).

• 한국공작기계학회논문집
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• 제11권6호
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• pp.17-23
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• 2002

A new 3D micromachining method called Hole Area Modulation(HAM), has been introduced to enhance the current micromachining technology. In this method, information on the depth of machining is converted to the sizes of small holes in the mask. The machining is carried out with a simple 2D movement of the workpiece. This method can be applied for machining various kinds of microcavities in various materials. In this paper, a machematical model for excimer laser micromachining based on HAM and also determination of optimal laser ablation conditions(width hole radius, step size, path, etc.) is performed by Genetic Algorithm(GA).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.430-431
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• 2006

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• 한국진공학회지
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• 제13권1호
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• pp.29-33
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• 2004

본 논문에서는 RF 마그네트론 스퍼터링법으로 비정질 실리콘을 증착하여 진공분위기에서 엑시머 레이저 어닐링을 이용하여 플라스틱 기판위에 극저온 다결정 실리콘 박막(＜$150^{\circ}C$)을 형성하였다. 비정질 실리콘 박막은 $120^{\circ}C$에서 Ar/He 혼합가스로 증착하였으며, Rutherford Backscattering Spectrometry로 측정한 박막내 아르곤 함량은 2% 이하였다. 에너지 밀도 320mJ/$\textrm{cm}^2$일 때 다결정 실리콘의 결정화도는 62%, Root-Mean-Square roughness는 267$\AA$를 나타내었다. 엑시머 레이저 결정화 후 결정립의 크기는 50nm에서 100nm 정도를 나타내었다.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• 전자공학회논문지 IE
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• 제43권2호
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• pp.11-15
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• 2006

FPD (flat panel display)의 능동구동 (active matrix) 방식의 플렉시블 디스플레이를 위해 PES의 플라스틱 기판위에 극저온 다결정 실리콘 박막 트랜지스터를 제작하였다. 상온에서도 박막의 증착이 가능한 RF 마크네트론 스퍼터링과 양질의 다결정 실리콘 박막을 얻을 수 있다고 알려진 XeCl 엑시머 레이져 열처리를 이용하였으며 모든 공정이 150$^{\circ}C$ 이하의 극저온에서 이루어졌다. 플라스틱 기판에 형성한 실리콘 박막 트랜지스터는 344 $mJ/cm^2$ 의 에너지 밀도에서 결정화 하였을 때 이동도 63.64$cm^2/V$ 로 기판에 회로를 집적할 수 있기에 충분한 특성을 얻을 수 있었다.