• Journal of the Korean Magnetics Society
• /
• v.1 no.2
• /
• pp.31-36
• /
• 1991

Structural and compositional heterogeneities of sputter deposited, amorphous $Co_{87}Zr_{4}NB_{9}$ thin films were investigated using TEM and EDS with windowless detector. The films deposited with substrate bias and annealed in rotating magnetc field showed two amorphous phases of Co-rich region and (ZrNb)oxide-rich region, and revealed 'ultra-soft' magnetic properties. Revesible bias-responses and overdamped frequency responses, along with small Hc, Hk and Mr/Ms ratio, give the possibility of ultra-soft magnetic behavior fo CoZrNb thin films. We proposed the vortex type magnetization distribution in remanent state which was correlated with the thin film heterogeneity. Then, the ultra-soft characteristics of the compositionally heterogeneous films were explained by the spin vortices that minimized the total magnetostatic and exchange coupling energies.

• Journal of Magnetics
• /
• v.6 no.4
• /
• pp.132-141
• /
• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• Journal of the Korean Magnetics Society
• /
• v.25 no.4
• /
• pp.117-122
• /
• 2015

The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.06a
• /
• pp.3-3
• /
• 2011

Since the first discovery of exchange anisotropy on Co/CoO system[1], there have been numerous studies to explore the physical origin of exchange-biased system[2,3]. In this presentation, we report that how the polarized neutron reflectomery can be applied to study the magnetization reversal behavior of the exchange biased system. As an example, the detailed magnetization reversal mechanism of the exchange-biased Py(30 nm)/FeMn (0, 15, 30 nm)/CoFe(30 nm) trilayers was studied and found that the 15 nm antiferromagnetic FeMn layer mediates the magnetization reversal behaviors of both Py and CoFe layers through interlayer exchange bias coupling. We also update the current activities in polarized neutron reflectometer in HANARO.

• Journal of the Korean Magnetics Society
• /
• v.27 no.3
• /
• pp.82-86
• /
• 2017

The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

• Journal of Magnetics
• /
• v.20 no.3
• /
• pp.211-214
• /
• 2015

$Cr_2O_3$ nanoparticles were prepared via one-step reactive laser ablation of Cr in oxygen. The metastable $CrO_2$ phase was obtained through the subsequent oxidation of $Cr_2O_3$ nanoparticles under $O_2$ with gas pressures of up to 40 MPa. The as-prepared $Cr_2O_3$ nanoparticles are spherical or rectangular in shape with sizes ranging from 20 nm to 50 nm. High oxygen pressure annealing is effective in producing meta-stable $CrO_2$ from as-dried $Cr_2O_3$ nanoparticles, and the $Cr_2O_3$ nanoparticles exhibit a weak ferromagnetic behavior with an exchange bias of up to 11 mT that can be ascribed to the interfacial exchange coupling between uncompensated surface spins and the antiferromagnetic core. The $Cr_2O_3/CrO_2$ nanoparticles exhibit an enhanced saturation magnetization and a reduced exchange bias with an increasing faction of $CrO_2$ due to the elimination of uncompensated surface spins over the $Cr_2O_3$ nanoparticles when exposed to a high pressure of $O_2$ and/or possible phase segregation that results in a smaller grain size for both $Cr_2O_3$ and $CrO_2$.

• Journal of the Korean Magnetics Society
• /
• v.18 no.4
• /
• pp.142-146
• /
• 2008

The angular dependence of the exchange bias($H_{ex}$) and coercivity($H_c$) in multilayer $[Pt/Co]_N-IrMn$ with applied measuring field rotated toward in-plane at angle $\theta$ from perpendicular-to-plane, has been measured. Multilayer films consisting of $Si/SiO_2/Ta(50)/Pt(4)/[Pt(15)/Co(t_{Co})]_N/IrMn(50)/Ta(50)(in\;{\AA})$ were prepared by magnetron sputtering under typical base pressure below $2{\times}10^{-8}$ Torr at room temperature. Magnetization measurements were performed on a vibrating sample magnetometer and extraordinary Hall voltage measurement systems after cooling from 550 K under a field of 2 kOe applied along the perpendicular to film direction. The hysteresis loop shifts from the origin not only along the field axis but also along the magnetization axis. $H_{ex}$ and $H_c$ show a $1/cos{\theta}$ and $1/|cos{\theta}|$ dependence on the angle($\theta$) between the applied measuring field and the perpendicular-film direction, respectively. This $1/cos{\theta}$ dependence can be accounted for by considering the angular dependence of strong out-of-plane magnetic anisotropy introduced during the field cooling.

• Journal of the Korean Magnetics Society
• /
• v.24 no.5
• /
• pp.140-145
• /
• 2014

We analyzed the MnIr thickness dependence of torque signals measured in exchange coupled CoFe/MnIr ($t_{AF}$) bilayers. The measured torque signals were compared with calculated ones by Stoner-Wohlfarth model. The exchange coupling anisotropy $J_c$ was considered for the model calculation between ferromagnetic (F) and antiferromagnetic (AF) layers with uniaxial anisotropy constant of $K_F$ and $K_{AF}$, respectively. The rotational losses were appeared in the range of $0.5t_c$ < $t_{AF}$ < $t_c$ ($=J_c/K_{AF}$) by the unpinned AF layer. While, the unidirectional anisotropy ($J_k$) was caused by the pinned AF layer at $t_{AF}$ > $t_c$. The critical thickness of MnIr layer was $t_c$ = 3.4 nm in CoFe/MnIr bilayers. The rotational losses behavior as shown in $t_{AF}$ = 3 nm sample were explained by the random orientation of the easy axis of AF grains. The unidirectional anisotropy obtained from torque signal of $t_{AF}$ = 10 nm sample was $J_k=0.63J_c$. Thus, the unidirectional anisotropy can be enhanced up to $J_k=J_c$ by aligning the AF easy axis.

• Journal of the Korean Magnetics Society
• /
• v.16 no.5
• /
• pp.234-239
• /
• 2006

We measured the microwave permeability in the frequency range of 100 MHz$\sim$9 GHz in the exchange biased CoFe/MnIr films. The results were analyzed based on the Landau-Lifshitz-Gilbert theory. The initial permeability and ferromagnetic resonance frequency was tuned by controlling the CoFe thickness and unidirectional anisotropy. The tunable range of ferromagnetic resonance frequency was up to 20 GHz in the thin CoFe layer of 1.5 nm. The CoFe/MnIr films showed the high permeability and low loss properties in the microwave frequency range. Thus, this material could be applied to the microwave devices.

• Journal of the Korean Magnetics Society
• /
• v.23 no.6
• /
• pp.200-204
• /
• 2013

In this study, we have fabricated magnetoresistive sensors of $50{\mu}m{\times}50{\mu}m$ cross type by trilayer structure of antiferromagnetic/nonmagnetic/ferromagnetic. The magnetic signal and magnetic domain of this sensor is measured. The sensor hysteresis loop is not in symmetrical at 0 Oe. This is may be due to the exchange coupling between ferromagnetic layer and anti ferromagnetic layer. This exchange bias value is 20 Oe. The sensor signal is measured at between the applied magnetic field and current. The sensor signal is measured between the applied magnetic field and current at $20^{\circ}$ and $90^{\circ}$ angles. The sensitivity of sensor signals is $20{\mu}V/Oe$ and $7{\mu}V/Oe$ at $20^{\circ}$ and $90^{\circ}$ angles, respectively. In addition, this sensor is also applied for the detection of magnetic bacteria at $20^{\circ}$ angle. From these results, we calculate the stray field of single bacteria is to be $5{\times}10^{-5}$Oe.