• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.259-263
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• 2001

There are several steps such as slicing, lapping, chemical etching and mechanical polishing in the silicon wafer production process. The chemical etching step is necessary to remove damaged layer caused In the slicing and lapping steps. The typical etching liquor is the acid mixture comprising nitric acid, acetic acid and hydrofluoric acid. At present, the waste acid is treated by a neutralization method with a high alkali cost and balky solid residue. A solvent extraction method is applicable to separate and recover each acid. Acetic acid is first separated from the waste liquor using 2-ethlyhexyl alcohols as an extractant. Then, nitric acid is recovered using TBP(Tri-butyl phosphate) as an extractant. Finally hydrofluoric acid is separated with the TBP solvent extraction. The expected recovered acids in this process are 2㏖/l acetic acid, 6㏖/1 nitric acid and 6㏖/l hydrofluoric acid. The yields of this process are almost 100% for acetic acid and nitric acid. On the other hand, it is important to recover and reuse the metal values contained in various industrial wastes in a viewpoint of environmental preservation. Most of industrial products are made through the processes to separate impurities in raw materials, solid and liquid wastes being necessarily discharged as industrial wastes. Chemical methods such as solvent extraction, ion exchange and membrane, and physical methods such as heavy media separation, magnetic separation and electrostatic separation are considered as the methods for separation and recovery of the metal values from the wastes. Some examples of the application of solvent extraction to the treatment of wastes such as Ni-Co alloy scrap, Sm-Co alloy scrap, fly ash and flue dust, and liquid wastes such as plating solution, the rinse solution, etching solution and pickling solution are introduced.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.60-67
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• 2020

In this study, copper (II) oxide powder for electroplating was prepared by recovering CuCl₂ from NaClO₃ type etching wastes via recovered non-sintering two step chemical reaction. In case of alkali copper carbonate [mCuCo₃·nCu(OH)₂], first reaction product, CuCo₃ is produced more than Cu(OH)₂ when the reaction molar ratio of sodium carbonate is low, since m is larger than n. As the reaction molar ratio of sodium carbonate increased, m is larger than n and Cu(OH)₂ was produced more than CuCO₃. In the case of m has same values as n, the optimum reaction mole ratio was 1.44 at the reaction temperature of 80℃ based on the theoretical copper content of 57.5 wt. %. The optimum amount of sodium hydroxide was 120 g at 80℃ for production of copper (II) oxide prepared by using basic copper carbonate product of first reaction. At this time, the yield of copper (II) oxide was 96.6 wt.%. Also, the chloride ion concentration was 9.7 mg/L. The properties of produced copper (II) oxide such as mean particle size, dissolution time for sulfuric acid, and repose angle were 19.5 mm, 64 second, and 34.8°, respectively. As a result of the hole filling test, it was found that the copper oxide (II) prepared with 120 g of sodium hydroxide, the optimum amount of basic hydroxide for copper carbonate, has a hole filling of 11.0 mm, which satisfies the general hole filling management range of 15 mm or less.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.300-315
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• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• Applied Chemistry for Engineering
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• v.27 no.1
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• pp.21-25
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• 2016

When copper alloy is used in etching process for the production of lead frame, the high concentration of heavy metals, such as iron, nickel and zinc may be included in the etching waste. Those etching waste is classified as a specified one. Therefore a customized design was designed for the purification process of the lead frame etching waste liquid containing high concentrations of heavy metals for the production of an electroplating copper(II) oxide. Since the lead frame etching waste solution contains highly concentrated heavy metal species, an ion exchange method is difficult to remove all heavy metals. In this study, a copper(I) chloride was manufactured by using water solubility difference related to the reduction-oxidation method followed by the reunion of copper(II) chloride using sodium sulfate as an oxidant. The hydrazine was chosen as a reducing agent. The optimum added amount was 1.4 mol per 1.0 mol of copper. In the case of removal of heavy metals by using the combination of reduction-oxidation and ion exchange resin methods, 4.3 ppm of $Fe^{3+}$, 2.4 ppm of $Ni^{2+}$ and 0.78 ppm of $Zn^{2+}$ can be reused as raw materials for electroplating copper(II) oxide when repeated three times.

• Clean Technology
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• v.4 no.1
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• pp.6-23
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• 1998

Recently, semiconductor industry has grown rapidly because of the large demand for electronic devices and equipment. The semiconductor industries have also played an important role on the economic growth in Korea. As the environmental regulations become strict, the proper environmental management and the well-developed waste minimization technologies in semiconductor industries are two of urgent problems to be solved. The semiconductor manufacturing process consists of a series of continuous chemical processes, such as cleaning, oxidation, diffusion, photolithography, etching and film deposition. During the processes, various environmentally hazardous wastes are produced. The wastes may be classified as wastewater, gaseous pollutants, and solid wastes. For waste minimization, the substitution of raw materials and process optimization techniques are used, while the selective destruction technologies of toxic chemicals contained in the wastes have been reported. Also, new technologies have been developed for source reduction and waste reduction, such as reduction of toxic chemical use and substitution of hazardous liquids with gaseous reactants or solvent.

• Journal of the Korea Organic Resources Recycling Association
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• v.30 no.3
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• pp.5-12
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• 2022

This study suggests the effective recycling method of sludge waste from various industrial fields to synthesize uniform colloidal silica nanoparticles. In detail, polymers are removed from the sludge waste to attain sludge-extracted silica (s-SiO₂) micron-sized particles, and ammonia assisted sonication is applied to s-SiO₂, which has effectively extracted the silanol precursor. The nano-sized silica (n-SiO₂) particles are successfully synthesized by a typical sol-gel method using silanol precursor. Also, the yield amounts of n-SiO₂ are determined by the function of s-SiO₂ etching time. Finally, n-SiO₂-based slurry is synthesized for the practical CMP application. As a result, rough-surfaced semiconductor chip is successfully polished by the n-SiO₂-based slurry to exhibit the mirror-like clean surface. In this regard, sludge wastes are successfully prepared as valuable semicondutor grade materials.