• 제목/요약/키워드: etching solution.

검색결과 531건 처리시간 0.028초

염산용액내에 황산 첨가에 의한 알루미늄의 교류에칭 특성 (Effect of Sulfuric Acid Addition on the Aluminum AC Etching in HCl Solution)

  • 김행영;최진섭;탁용석
    • 공업화학
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    • 제9권4호
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    • pp.463-468
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    • 1998
  • 알루미늄의 부식에 있어서 HCI 용액내에 황산을 첨가하는 경우 황산이온의 화학적 흡착에 의한 부식억제 효과가 나타나며, CV (cyclic voltammetry) 실험결과 황산이온은 핏트내부에 보호성 산화피막을 생성함으로서 에치핏트가 핏트내부와 알루미늄 표면에 함께 생성되어 핏트의 밀도가 증가하였다. 알루미늄 교류에칭시에 핏트분포는 황산이온의 농도와 환원전류량에 의하여 크게 영향을 받으며, 환원전류인가시 $0.8mC/cm^2$ 이하의 전하량에서 핏트내부에 생성된 산화피막은 황산이온 농도의 증가에 따라 핏트발생에 대한 저항성이 중가하였으나, $0.8mC/cm^2$ 이상에서는 산화피막내에 국부적인 구조변화가 발생하며 황산이온 농도에 관계없이 산화피막의 파괴가 빠르게 진행되었다.

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Growth of Silicon Nanowire Arrays Based on Metal-Assisted Etching

  • Sihn, Donghee;Sohn, Honglae
    • 통합자연과학논문집
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    • 제5권4호
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    • pp.211-215
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    • 2012
  • Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

Current-voltage characteristics of n-AZO/p-Si-rod heterojunction

  • 이성광;최진성;정난주;김윤기
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.338.2-338.2
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    • 2016
  • Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

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Effect On Glass Texturing For Enhancement of Light Trapping in Perovskite Solar Cells

  • Kim, Dong In;Nam, Sang-Hun;Hwang, Ki-Hwan;Lee, Yong-Min;Boo, Jin-Hyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.387.2-387.2
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    • 2016
  • Glass texturing is a sufficient method for changing the surface morphology to enhance the light trapping. In this study, glass texturing was applied to the perovskite solar cell for improving the current density. Glass substrates (back-side glass of FTO coated glass substrate) were textured by randomly structure assisted wet etching process using diluted HF solution at a constant concentration of etchants (HF:H2O=1:1). Then, the light trapping properties of suitable films were controlled over a wide range by varying the etching time (1, 2, 3, 4 and 5 min.). The surface texturing changed the reflected light in an angle that it can be reflected by substrate glass surface. As a result, Current density and cell efficiency were affected by light trapping layer using glass texturing method in perovskite solar cells.

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초음파를 이용한 전처리가 알루미늄의 전기화학적 에칭 및 정전용량에 미치는 효과 (Effect of Ultrasound During Pretreatment on the Electrochemical Etching of Aluminum and Its Capacitance)

  • 정인수;탁용석;박강용;김현기;김성수
    • Corrosion Science and Technology
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    • 제10권1호
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    • pp.37-42
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    • 2011
  • Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the aluminum electrolytic capacitor electrode. Capacitance of aluminum electrolytic capacitor is closely related with surface area, which depends on size and number of etch pits. Size of etch pits need to be controlled because inside of the pits can be buried by the formation of dielectric oxide film. In this work, the effect of ultrasound pretreatment on the aluminum etch pit formation and capacitance were investigated. Additionally, the relationship between the second etching effect on pit size and capacitance was studied.

태양전지용 규소의 texture etching에 미치는 초음파의 영향 (The effect of the ultrasonic wave on the texturisation of the silicon crystal-line solar cell)

  • 김정민;김영관
    • 한국결정성장학회지
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    • 제13권6호
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    • pp.261-266
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    • 2003
  • 결정질 규소를 이용한 태양전지의 제조에 필요한 texture 식각 공정에 초음파를 적용하였다. 이 결과 $60^{\circ}C$에서 초음파를 적용하여 식각된 규소 기판으로 제조된 태양전지의 광전변환효율이 기존의 방식대로 $70^{\circ}C$에서 초음파 없이 식각된 규소 기판으로 제조된 태양전지의 광전변환효율보다 높았다. 이 결과는 규소를 이용한 태양전지의 제조에 필요한 식각공정에서 초음파를 적용하면 공정 온도를 낮출 수 있고 또한 사용되는 고가의 용액을 줄일 수 있어 전체적으로 태양전지의 제조 가격을 낮출 수 있는 가능성을 보여준다.

펜듈럼 구조체 제작을 위한 TMAH 습식 식각 시 모서리 보상에 관한 연구 (A study on the corner compensation in anisotropic TMAH etching for pendulum structure)

  • 한규성;이기정;박신욱;양상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.2241-2242
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    • 2008
  • Anisotropic TMAH etching is key processing step for the fabrication of pendulum structure. During the etching, convex corners are attacked, and a proper compensating structure design is required when fabricating pendulum structures with sharp convex corner. In this paper, we present four compensation structures for convex corner compensation with 30% wt TMAH-water solution at $89\pm1^{\circ}C$ temperature, and observe the etched convex corner by optical microscope. we compare the result of calculations and experiments about four convex corner compensation patterns.

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다공성 실리콘 나노선의 제작 및 광학적 특성 분석 (Fabrication and Optical Characterization of Porous Silicon Nanowires)

  • 김정길;최석호
    • 한국생산제조학회지
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    • 제21권6호
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    • pp.855-859
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    • 2012
  • Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.

감광성유리를 이용한 마이크로머시닝 기술 (Micromachining technology using photosensitive glass)

  • 조수제
    • 한국레이저가공학회지
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    • 제14권1호
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    • pp.25-29
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    • 2011
  • Micromachining of photosensitive glass by UV exposure, heat treatment, and etching processes is reported. Like photoresist, the photosensitive glass is also classified into positive and negative types by development characteristics. For the positive type, the exposed area is crystallized and etched away during the etching process in HF solution, whereas the unexposed area is crystallized and etched away for the negative type. The crystallized area of the photosensitive glass has an etch rate approximately 30~100 times faster than that of the amorphous area so that it becomes possible to fabricate microstructures in the glass. Based on the unique properties of glass such as high optical transparency, electrical insulation, and chemical/thermal stability, the glass micromachining technique introduced in this work could be widely applied to various devices in the fields of electronics, bio engineering, nanoelectonics and so on.

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결정입계 선택적 식각 기법을 적용한 다결정 규소 태양전지의 효율 향상에 관한 연구 (A study on efficiency improvement of poly-Si solar cell using a selective etching along the grain boundaries)

  • 임동건;이수은;박성현;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.597-600
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    • 1999
  • A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

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