Journal of Integrative Natural Science (통합자연과학논문집)

The Basic Science Institute Chosun University (조선대학교 기초과학연구원)
권호 표지
DOI QR코드

DOI QR Code

Growth of Silicon Nanowire Arrays Based on Metal-Assisted Etching

  • Received : 2012.11.12
  • Accepted : 2012.12.21
  • Published : 2012.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

Keywords

References

  1. A. I. Hochbaum, R. Fan, R. He, and P. Yang, "Con-trolled growth of Si nanowire arrays for device integration", Nano Lett. Vol. 5, pp. 457-460, 2005. https://doi.org/10.1021/nl047990x
  2. V. Schmidt, S. Senz, and U. Gosele, "Diameterdependent growth direction of epitaxial silicon nanowires", Nano Lett. Vol. 5, pp. 931-935, 2005. https://doi.org/10.1021/nl050462g
  3. X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, "Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices", Nature Vol. 409, pp. 66-69, 2001. https://doi.org/10.1038/35051047
  4. M. D. Kelzenberg, D. B. Turner-Evans, B. M. Kayes, M. A. Filler, M. C. Putnam, N. S. Lewis, and H. A. Atwater, "Photovoltaic measurements in single-nanowire silicon solar cells", Nano Lett. Vol. 8, pp. 710-714, 2008. https://doi.org/10.1021/nl072622p
  5. S.-M. Koo, Q. Li, M. D. Edelstein, C. A. Richter, and E. M. Vogel, "Enhanced channel modulation in dual-gated silicon nanowire transistors", Nano Lett. Vol. 5, pp. 2519-2523, 2005. https://doi.org/10.1021/nl051855i
  6. Y. Cui, Z. H. Zhong, D. L. Wang, W. U. Wang, and C. M. Lieber, "High performance silicon nanowire field effect transistors", Nano Lett. Vol. 3, pp. 149- 152, 2003. https://doi.org/10.1021/nl025875l
  7. D. H. Jung, "Biosensor based on distributed bragg reflector photonic crystals for the detection of protein A", J. Chosun Natural Sci., Vol. 3, No. 1, p. 33, 2010.
  8. S. H. Jang, "Chemical and Physical Properties of Porous Silicon", J. Chosun Natural Sci., Vol. 4, No. 1, p. 1, 2011.
  9. S. G. Kim, "Optical characterization of smart dust based on photonic crystals and its sensing applications", J. Chosun Natural Sci, Vol. 4, No. 1, p. 7, 2011.
  10. Y. D. Koh, "1-D Photonic crystals based on bragg structure for sensing and drug delivery applications", J. Chosun Natural Sci., Vol. 4, No. 1, p. 11, 2011.
  11. K. S. Jung, "Fabrication and characterization of DBR porous silicon chip for the detection of chemical nerve agents", J. Chosun Natural Sci, Vol. 3, No. 4, p. 237, 2010.
  12. S. D. Cho, "Detection of nitroaromatic compounds with functionalized porous silicon using quenching photoluminescence", J. Chosun Natural Sci., Vol. 3, No. 4, p. 202, 2010.
  13. S. H. Jang, "Study on thickness of porous silicon layer according to the various anodization times", J. Chosun Natural Sci., Vol. 3, No. 4, p. 206, 2010.
  14. S. H. Jang, "Investigation of relationship between etch current and morphology and porosity of porous silicon", J. Chosun Natural Sci., Vol. 3, No. 4, p. 120, 2010.
  15. J. M. Han, "Photoluminescence of Porous Silicon According to Various Etching Times and Various Applied Current Densities", J. Chosun Natural Sci., Vol. 3, No. 3, p. 148, 2010.
  16. Y. D. Koh, "Analysis on Oxidation of Porous Silica Obtained from Thermal Oxidation of Porous Silicon", J. Chosun Natural Sci, Vol. 3, No. 3, p. 153, 2010.