• 한국재료학회지
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• 제16권1호
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• pp.63-67
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• 2006

The characteristics of the wet-etching of ZnO thin films were investigated using hydrochloric and phosphoric acid solutions as etchants. The etch rate of ZnO films, using highly diluted hydrochloric acid solutions at a concentration of 0.25% in deionized water, was determined to be about 120 nm/min, and linearly increased with increasing the acid concentration, resulting in $1.17{\mu}m/min$ when a 2% HCl solution was used. The surface of ZnO etched by an HCl solution, observed by scanning electron microscopy, showed a rough morphology with a high density of hexagonal pyramids or cones with sidewall angles of about ${\sim}45^{\circ}C$. Moreover, the sidewall angles of the masked area were similar to those of the pyramids on the surface. In comparison, the surface of ZnO etched by a phosphoric acid had a smooth surface morphology. The origin of this difference is from the very initial stage of etching, indicating that the etch-mechanism is different for each solution. Furthermore, when $H_3PO_4$ was added to the HCl aqueous solution, the morphology of the etched surface was greatly enhanced and the sidewall angle was also increased to about $65^{\circ}C$.

• 공업화학
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• 제7권4호
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• pp.614-622
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• 1996

엣칭용 염화제2철 용액중의 효과적인 니켈제거에 관해 연구하였다. 전해철괴 또는 폐새도우마스크 철편을 사용하여 염화제2철을 염화제1철로 환원시킨후 용액중의 $Ni^{2+}$를 전해철 분말로 환원 석출시켰다. 최적의 실험조건하에서 초기 니켈의 농도가 1.0%일 때 니켈제거율은 99%이었고 초기 니켈의 농도가 0.1%일 때 니켈제거율은 98%이었다. 염화제2철의 환원반응 중에 생성된 수산화철의 종류 및 입자크기를 XRD와 SEM으로 분석하였다.

• 한국정밀공학회지
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• 제21권4호
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• pp.24-31
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• 2004

The objective of this work is to suggest a mastless pattern fabrication technique using the combination of machining by Nanoindenter(equation omitted) XP and HF wet etching. Sample line patterns were machined on a borosilicate surface by constant load scratch (CLS) of the Nanoindenter(equation omitted) XP with a Berkovich diamond tip, and they were etched in HF solution to investigate chemical characteristics of the machined borosilicate surface. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

• 통합자연과학논문집
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• 제3권4호
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• pp.206-209
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• 2010

As the etching time is varied, the change of thickness of the porous silicon layers was successfully investigated. The thickness of the PSi layer as a function of anodization time for a p-type substrate that is etched at a constant current density of 50 $mA/cm^2$ in a 35% hydrofluoric acid solution shows a linear relationship between the etching time and the thickness of the PSi layer.

• 대한소아치과학회지
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• 제35권2호
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• pp.216-224
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• 2008

자가 산부식 접착제는 산부식 과정 후 수세없이 와동을 충전할 수 있다. 움직임이 많고 행동 조절이 어려운 환자의 경우 시술의 절차를 줄일 수 있는 자가 산부식 접착제가 치면열구전색제의 사용을 보다 용이하게 할 수 있다. 그러나 법랑질에 대한 산부식 능력이 인산에 비해 낮아서 충분한 부식이 일어나는지에 대해 논란이 되고 있다. 이에 대해 자가 산부식 접착제의 약한 산부식능을 감안하여 열구성형술과 acidic primer의 도포 시간을 증가시키는 등의 임상 술식을 시행하고 자가 산부식 접착제의 단점이 보완되는지를 알아보고자 하였다. 35% 인산으로 산부식 후 전색술을 시행한 경우와 자가 산부식 접착제를 사용하여 도포한 경우의 미세 누출도를 염색액의 침투도를 비교하고 주사전자현미경을 이용한 산부식상 관찰을 통하여 다음과 같은 결론을 얻었다. 1. 열구 성형술을 시행 후 자가산부식접착제를 도포한 군은 인산 부식 20초를 시행한 군과 자가산부식접착제를 20초, 40초 도포한 군보다 미세누출도가 더 낮았다. 2. 자가산부식접착제를 제조 회사의 지시에 따라 20초간 도포한 군과 40초로 늘려 도포한 군 간에 미세누출도의 유의차가 없었다. 3. 주사전자현미경 관찰 시 전형적인 산부식 양상은 인산부식 20초군에서만 관찰되었으며 열구성형술을 시행하고 자가산부식접착제를 도포한 군이 자가산부식접착제만 20, 40초 도포한 군보다는 표면 거칠기가 증가하였다.

• 자원리싸이클링
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• 제32권3호
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• pp.9-17
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• 2023

폐리튬인산철 전지의 양극재로부터 리튬을 효율적으로 회수하기 위하여 활발하게 연구 중이며, 이는 리튬 자원의 지역 편재성 및 가격 변동성을 해소하고 환경오염 문제를 해결할 수 있다. 폐리튬인산철 전지로부터 리튬을 침출 및 회수하기 위하여 동형치환 침출 공정을 사용하였다. 상대적으로 저렴한 염화철 에칭액을 침출제로 사용하여 LFP의 Fe²⁺를 동형 치환하여 리튬을 침출하였다. 또한 추가적인 첨가제 및 추출제 없이 염화철 에칭액만을 사용하였으며, 염화철 에칭액을 LFP 이론적 몰 비 대비 0.7배, 1.0배, 1.3배, 그리고 1.6배로 하여 리튬의 침출율을 비교하였다. LFP 몰 비 대비 1.3배의 조건에서 약 98%로 가장 높은 리튬 침출율을 보였고 이후 침출액은 NaOH를 투입하여 pH 조절을 통하여 철을 제거하였다. 철이 제거된 용액으로부터 탄산리튬을 합성하였고, 그 분말 특성을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1558-1560
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• 1998

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.11-15
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• 2004

Scales, accumulated on some parts of semiconductor equipments such as sputters and CVD during the device fabrication processes, often lower the lifetime of the equipments and production yields. Thus, many equipment parts have be cleaned regularly. In this study, an attempt to establish an effective process to remove scales on the sidewall of collimators located inside the chamber of the sputter was made. The EDX analysis revealed that the scales were composed of Ti and TiN with the columnar structure. Through the trial-and-error experiments, it was found that the etching in the $HNO_3$:$H_2SO_4$:$H_2O$=4:2:4 solution for 5.5 hrs at $67^{\circ}C$, after the oxide removal in the HF solution, and the heat-treatment at $700^{\circ}C$ for 1 min., was the most effective process for the scale removal.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.31-35
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• 2011

For high efficiency of Si-cells, Si wafers were textured by the KOH and NaOH etching solution to decreas the reflectance at surfaces of the cells. The textured surfaces were shown various types such as isotropic and anisotropic depending on the etching solution. The reflectance at sample of an anisotropic form with pyramid type was lower than that of isotropic form. The surface with isotropic form of general tiny circles on the surface increased the efficiency, however, the reflectance of it was increased. The efficiency was increased on surface with low roughness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.418-418
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• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.