• Transactions of Materials Processing
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• v.11 no.7
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• pp.601-607
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• 2002

Optically transparent materials such as fused silica, quartz and crystal have become important in the filed of optics and optoelectronics. Laser ablation continues to grow as an important technique for micromachining and surface modification of various materials, because many problems caused by direct contact between tools and workpiece can be avoided. Especially, laser ablation with excimer lasers enables fine micromachining of transparent materials such as fused silica, quartz and crystal, etc. In this study, laser-induced wet etching of fused silica in organic solution was conducted. KrF excimer laser was used as a light source and acetone solution of pyrene was used as etchant. Changing the number of laser pulses, micro holes of various depths are fabricated.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.26-26
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• 1997

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.474-479
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• 2020

The etching solution for slimming of glass substrates was manufactured and HF was used as the main ingredient of wet etching solutions. Various types of strong acids such as HCl, HNO₃, H₂SO₄, amino acids and carboxylic acids such as citric acid, and etched solutions, respectively, were used to measure the etching rates and changes in surface shape of the glass. Regardless of the type of strong acids, the etching rate of the glass increased linearly as the added amount increased, and the sludge removal effect of the glass surface was also shown. The etching solution containing HCl showed more efficient results than other strong acids in the etching rate and the effect of removing sludge. The addition of carboxylic acid did not significantly affect the variation of etching rate, but had the effect of removing sludge. However, if amino acids were added, changes in etching rate and sludge removal were not significant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.40-44
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• 2022

Wet etching of α-Ga₂O₃ epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga₂O₃ etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75℃, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga₂O₃ in the 35 % HCl solution was dominated by the reaction-limited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.

• Journal of Dental Rehabilitation and Applied Science
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• v.37 no.1
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• pp.23-30
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• 2021

Purpose: The aim of this study was to investigate effect of zirconia on osseointegration and Surface appearance by surface treatments using various acid solution. Materials and Methods: The prepared zirconia disks were treated with hydrofluoric acid solution and photo-assisted etching under various condition. The surface was analyzed by SEM and the surface roughness was analyzed by using surface profiler. The osteogenic effect of MC3T3-E1 cells was assessed via fluorescent staining observation and reverse transcriptase-polymerase chain reaction (RT-PCR). Results: Various roughness were obtained according to the surface treatment method. The surface roughness increased in the group treated with hydrofluoric acid solution, but that had week network structure. In the method using photo-assisted etching, the surface roughness increased in micro units. Cell reaction showed better results in the photo-assisted etching group than in the hydrofluoric acid-treated group (P < 0.05). And it showed even osteoblastic cell distribution in photo-assisted etching group. Conclusion: As a result, the photo-assisted etching method is more effective than the simple acid solution treatment for zirconia treatment for osseointegration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.685-688
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• 2009

Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HN$O_3$/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/HN$O_3$ ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of $16{\sim}19$% for wavelength between 400 nm and 900 nm depending on different etching conditions.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.138-143
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• 2007

The effects of texturing and anti-reflection coating on the reflection properties of multi-crystalline silicon solar cell have been investigated. The chemical solutions of alkaline and acidic etching solutions were used for texturing at the surface of multi-crystalline Si wafer. Experiments were performed with various temperature and time conditions in order to determine the optimized etching condition. Alkaline etching solution was found inadequate to the texturing of multi-crystalline Si due to its high reflectance of about 25%. The reflectance of Si wafer texturing with acidic etching solution showed a very low reflectance about 10%, which was attributed to the formation of homogeneous. Also, deposition of ITO anti-reflection coating reduced the reflectance of multi-crystalline si etched with acidic solution($HF+HNO_3$) to 2.6%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.354-358
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• 2006

In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.367-374
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• 2000

This paper presents a method to fabricate freestanding structures by (100) silicon anisotropic etching and nickel electroless plating. The electroless plating process is simpler than the electroplating, and provides good coating uniformity and improved mechanical properties. Furthermore, the (100) silicon anisotropic etching in KOH solution with being aligned to <100> direction provides vertical (100) sidewalls on etched (100) surface. In this paper, the effects of the nickel electroless plating condition on the properties of electroless plated metal structures are investigated to apply fabrication of micro structures and then various micro structures are fabricated by nickel electroless plating. And then, the structures are released by silicon anisotropic etching in KOH solution with a large gap between the structure and the substrate. The fabricated cantilever structures are $210\mum$. wide, $5\mum$. thick and $15\mum$. over the silicon substrate, and the comb structure has the comb electrodes which are $4\mum$. wide and $4.3\mum$. thick separated by$1\mum$. It is released by silicon anisotropic etching in KOH solution. The gap between the structure and the substrate is $2.5\mum$.