• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.463-468
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• 1998

When sulfuric acid was added in HCl etching solution, corrosion of aluminum metal was inhibited by the chemical adsorption of sulfate ions. In the presence of $SO_4^{-2}$, cyclic voltammetry showed that the protective oxide film was formed on the inner surfaces of etch pits and, pit density was increased by nucleation on both the aluminum surface and the pits inside. Structure and distribution of etch pits found in AC etching of aluminum were strongly influenced by the concentration of $SO_4^{-2}$ and the amount of cathodic pulse charging. Below $0.8mC/cm^2$ of cathodic pulse charging, oxide films formed inside actively dissolving pits indicated the higher resistance to pit nucleation as the concentration of $SO_4^{-2}$ increases. However, the structural change of oxide films occurred above the $0.8mC/cm^2$ charging and the effect of $SO_4^{-2}$ was minimized, and it resulted in the rapid formation of etch pits.

• Journal of Integrative Natural Science
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• v.5 no.4
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• pp.211-215
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• 2012

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.338.2-338.2
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• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.387.2-387.2
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• 2016

Glass texturing is a sufficient method for changing the surface morphology to enhance the light trapping. In this study, glass texturing was applied to the perovskite solar cell for improving the current density. Glass substrates (back-side glass of FTO coated glass substrate) were textured by randomly structure assisted wet etching process using diluted HF solution at a constant concentration of etchants (HF:H2O=1:1). Then, the light trapping properties of suitable films were controlled over a wide range by varying the etching time (1, 2, 3, 4 and 5 min.). The surface texturing changed the reflected light in an angle that it can be reflected by substrate glass surface. As a result, Current density and cell efficiency were affected by light trapping layer using glass texturing method in perovskite solar cells.

• Corrosion Science and Technology
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• v.10 no.1
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• pp.37-42
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• 2011

Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the aluminum electrolytic capacitor electrode. Capacitance of aluminum electrolytic capacitor is closely related with surface area, which depends on size and number of etch pits. Size of etch pits need to be controlled because inside of the pits can be buried by the formation of dielectric oxide film. In this work, the effect of ultrasound pretreatment on the aluminum etch pit formation and capacitance were investigated. Additionally, the relationship between the second etching effect on pit size and capacitance was studied.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.261-266
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• 2003

The presence of ultrasonic wave in the caustic etching process enhances the etching rate and results in finer and more homogeneous textured structure of the crystalline silicon surface. The silicon solar cell textured in the caustic solution at $60^{\circ}C$ with ultrasonic wave gives higher cell performance than the cell textured at $70^{\circ}C$ without ultrasonic wave. This result indicates a strong possibility of lowering the production cost of the silicon solar cell through saving the thermal budget or expensive chemical normally employed in the texturisation of the crystalline silicon.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2241-2242
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• 2008

Anisotropic TMAH etching is key processing step for the fabrication of pendulum structure. During the etching, convex corners are attacked, and a proper compensating structure design is required when fabricating pendulum structures with sharp convex corner. In this paper, we present four compensation structures for convex corner compensation with 30% wt TMAH-water solution at $89\pm1^{\circ}C$ temperature, and observe the etched convex corner by optical microscope. we compare the result of calculations and experiments about four convex corner compensation patterns.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.855-859
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• 2012

Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.

• Laser Solutions
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• v.14 no.1
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• pp.25-29
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• 2011

Micromachining of photosensitive glass by UV exposure, heat treatment, and etching processes is reported. Like photoresist, the photosensitive glass is also classified into positive and negative types by development characteristics. For the positive type, the exposed area is crystallized and etched away during the etching process in HF solution, whereas the unexposed area is crystallized and etched away for the negative type. The crystallized area of the photosensitive glass has an etch rate approximately 30~100 times faster than that of the amorphous area so that it becomes possible to fabricate microstructures in the glass. Based on the unique properties of glass such as high optical transparency, electrical insulation, and chemical/thermal stability, the glass micromachining technique introduced in this work could be widely applied to various devices in the fields of electronics, bio engineering, nanoelectonics and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.597-600
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• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.