• Korean Journal of Materials Research
• /
• v.16 no.1
• /
• pp.63-67
• /
• 2006

The characteristics of the wet-etching of ZnO thin films were investigated using hydrochloric and phosphoric acid solutions as etchants. The etch rate of ZnO films, using highly diluted hydrochloric acid solutions at a concentration of 0.25% in deionized water, was determined to be about 120 nm/min, and linearly increased with increasing the acid concentration, resulting in $1.17{\mu}m/min$ when a 2% HCl solution was used. The surface of ZnO etched by an HCl solution, observed by scanning electron microscopy, showed a rough morphology with a high density of hexagonal pyramids or cones with sidewall angles of about ${\sim}45^{\circ}C$. Moreover, the sidewall angles of the masked area were similar to those of the pyramids on the surface. In comparison, the surface of ZnO etched by a phosphoric acid had a smooth surface morphology. The origin of this difference is from the very initial stage of etching, indicating that the etch-mechanism is different for each solution. Furthermore, when $H_3PO_4$ was added to the HCl aqueous solution, the morphology of the etched surface was greatly enhanced and the sidewall angle was also increased to about $65^{\circ}C$.

• Applied Chemistry for Engineering
• /
• v.7 no.4
• /
• pp.614-622
• /
• 1996

Efficient removal of nickel from the ferric chloride etching solution has been studied. At first, $Fe^{3+}$ was reduced to $Fe^{2+}$ by the electrolytic iron flake or the waste shadow mask iron plate. And then, $Ni^{2+}$ was removed from the solution by electrolytic iron powder. Under the optimum conditions the reduced rates of nickel were 99 % and 98%, respectively at the initial $Ni^{2+}$ concentrations of 1.0% and 0.1%. Sludge formed during reduction of $Fe^{3+}$ in the solution were analyzed by XRD and SEM.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.4
• /
• pp.24-31
• /
• 2004

The objective of this work is to suggest a mastless pattern fabrication technique using the combination of machining by Nanoindenter(equation omitted) XP and HF wet etching. Sample line patterns were machined on a borosilicate surface by constant load scratch (CLS) of the Nanoindenter(equation omitted) XP with a Berkovich diamond tip, and they were etched in HF solution to investigate chemical characteristics of the machined borosilicate surface. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

• Journal of Integrative Natural Science
• /
• v.3 no.4
• /
• pp.206-209
• /
• 2010

As the etching time is varied, the change of thickness of the porous silicon layers was successfully investigated. The thickness of the PSi layer as a function of anodization time for a p-type substrate that is etched at a constant current density of 50 $mA/cm^2$ in a 35% hydrofluoric acid solution shows a linear relationship between the etching time and the thickness of the PSi layer.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.35 no.2
• /
• pp.216-224
• /
• 2008

The purpose of this study was to evaluate the effectiveness of fissurotomy and double application time of acidic primer of self-etching adhesive system of acid treatment on enamel surfaces for prevention of microleakage of pit and fissure sealants. The microleakage of pit and fissure sealants was evaluated by measuring the penetration depth of methylene blue solution. Specimens were divided by 4 groups according to the method of treatment. Group I: 35% phosphoric acid etching, 20 seconds. Group II: Priming with self-etching primer, 20 seconds. Group III: Priming with self-etching primer, 40 seconds. Group IV: Priming with self-etching primer, 20 seconds, after fissurotomy. The etched pattern produced on enamel was observed using a scanning electron microscope. Obtained data were analysed statistically using Kruscal-Wallis test followed by Mann-Whitney test for comparison of groups. The results are as follows: 1. Microleakage scores of group IV priming with self-etching primer 20 seconds after fissurotomy was the lowest. 2. Microleakage scores between group II and group III were not shown significant difference. 3. Enamel for 20 seconds etching with 35% phosphoric acid was observed the most effective etching pattern. And the etching pattern on the fissure enamel with self-etching adhesive 20 seconds after fissurotomy was more prominent than group II, III only using self-etching primer.

• Resources Recycling
• /
• v.32 no.3
• /
• pp.9-17
• /
• 2023

Efforts are currently underway to develop a method for efficiently recovering lithium from the cathode material of waste lithium iron phosphate batteries (LFP). The successful application of lithium battery recycling can address the regional ubiquity and price volatility of lithium resources, while also mitigating the environmental impact associated with both waste battery material and lithium production processes. The isomorphic substitution leaching process was used to recover lithium from spent lithium iron phosphate batteries. Lithium was leached by the isomorphic substitution of Fe²⁺ in LFP using a relatively inexpensive ferric chloride etching solution as a leaching agent. In the study, the leaching rate of lithium was compared using the ferric chloride etching solution at various multiples of the LFP molar ratio: 0.7, 1.0, 1.3, and 1.6 times. The highest lithium leaching rate was shown at about 98% when using 1.3 times the LFP molar ratio. Subsequently, to eliminate Fe, the leachate was treated with NaOH. The Fe-free solution was then used to synthesize lithium carbonate, and the harvested powder was characterized and validated. The surface shape and crystal phase were analyzed using SEM and XRD analysis, and impurities and purity were confirmed using ICP analysis.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1558-1560
• /
• 1998

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.2
• /
• pp.11-15
• /
• 2004

Scales, accumulated on some parts of semiconductor equipments such as sputters and CVD during the device fabrication processes, often lower the lifetime of the equipments and production yields. Thus, many equipment parts have be cleaned regularly. In this study, an attempt to establish an effective process to remove scales on the sidewall of collimators located inside the chamber of the sputter was made. The EDX analysis revealed that the scales were composed of Ti and TiN with the columnar structure. Through the trial-and-error experiments, it was found that the etching in the $HNO_3$:$H_2SO_4$:$H_2O$=4:2:4 solution for 5.5 hrs at $67^{\circ}C$, after the oxide removal in the HF solution, and the heat-treatment at $700^{\circ}C$ for 1 min., was the most effective process for the scale removal.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.4
• /
• pp.31-35
• /
• 2011

For high efficiency of Si-cells, Si wafers were textured by the KOH and NaOH etching solution to decreas the reflectance at surfaces of the cells. The textured surfaces were shown various types such as isotropic and anisotropic depending on the etching solution. The reflectance at sample of an anisotropic form with pyramid type was lower than that of isotropic form. The surface with isotropic form of general tiny circles on the surface increased the efficiency, however, the reflectance of it was increased. The efficiency was increased on surface with low roughness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.418-418
• /
• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.