• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.276-281
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• 2021

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we synthesized yttrium oxyfluoride (YOF) powder by a solid-state reaction using Y₂O₃ and YF₃ as raw materials. Mixing ratio of the Y₂O₃ and YF₃ was varied from 1.0:1.0 to 1.0:1.6. Effects of the mixing ratio on crystal structure and microstructure of the synthesized YOF powder were investigated using XRD and FE-SEM. The synthesized YOF powder was successfully applied to plasma spray coating process on Al substrate.

• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.1
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• pp.5-14
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• 2023

In this study, LiDAR-reflective black hollow-structured silica/titania(B-HST) materials are successfully synthesized by employing the NaBH₄ reduction and etching method on silica/titania core/shell(STCS) materials, which also effectively enhance near-infrared(NIR) reflectance. Moreover, core-etched supernatant solutions are collected and recycled for the synthesis of extracted silica(e-SiO₂) process, which successfully applies as filler materials for semiconductor epoxy molding compound(EMC). In detail, B-HST materials, fabricated by the sequential experimental steps of sol-gel, reduction, and sonication-mediated etching method, manifest blackness(L^*) of 13.2 similar to black paint and excellent NIR reflectance(31.1%). Consequently, B-HST materials are successfully prepared as LiDAR-reflective black materials. Additionally, core-etched supernatant solution with silanol precursors are employed for synthesis of homogeneous silica filler materials via sol-gel method. As-synthesized silica fillers are incorporated with epoxy resin and carbon black for the preparation of semiconductor EMC. Experimentally synthesized EMC exhibits comparable mechanical-chemical properties to commercial EMC. Conclusively, this study successfully proposes designing procedure and practical experimental method for simultaneously synthesizing the NIR-reflective black materials for self-driving vehicles and EMC materials for semiconductors, which are materials suitable for the industrial 4.0 era, and presented their applicability in future industries.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.1-6
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• 2022

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.93-98
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• 2023

In this paper, an artificial neural network based on simulated annealing was constructed. The mapping relationship between the parameters of micro-scaled flow channels electrochemical machining and the channel shape was established by training the samples. The depth and width of micro-scaled flow channels electrochemical machining on stainless steel surface were predicted, and the flow channels experiment was carried out with pulse power supply in NaNO3 solution to verify the established network model. The results show that the depth and width of the channel predicted by the simulated annealing artificial neural network with "4-7-2" structure are very close to the experimental values, and the error is less than 5.3%. The predicted and experimental data show that the etching degree in the process of channels electrochemical machining is closely related to voltage and current density. When the voltage is less than 5V, a "small island" is formed in the channel; When the voltage is greater than 40V, the lateral etching of the channel is relatively large, and the "dam" between the channels disappears. When the voltage is 25V, the machining morphology of the channel is the best.

• Restorative Dentistry and Endodontics
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• v.27 no.4
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• pp.382-388
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• 2002

Compomer is composed of matrix and filler : matrix is made of the combination of resins and polycarboxylic molecules that are light-cured, and a filler is a glass component which is capable of ion-release. The resin content of compomers produces polymerization shrinkage which can adversely affect marginal adaptation. Pretreatment is a fundamental step which is treated with conditioner or primer in the use of these materials. Microleakage of restorative materials has been investigated mostly by dye penetration method. Dye penetration method was not quantitative and not measured repeatedly. Fluid filtration method, introduced and developed by Pashley's group, has been extensively used for 20 years for research purpose to understand the physiology of dentin, as well as the effects of various restorative treatments on dentin permeability. It permits quantitative, nondestructive measurment of microleakage in a longitudinal manner. The purpose of this study was to evaluate the change of dentin permeability according to the process of compomer restoration. In this study. Cl V cavities were prepared on buccal surface of thirty extracted human molars. The prepared cavities were etched by 37% phosphoric acid. The experimental teeth were randomly divided into three groups. Each group was treated with following materials Group 1 : Prime & Bond NT/Dyract AP, Group2： Single Bond/F2000 compomer, Group 3 : Syntac Single Component/Compoglass. The bonding agent and compomer were applied for each group following manufacturers information. Dentin permeability of each group was measured at each process by fluid filtration method; Step 1 : preparation(smear layer). Step 2 : etching(smear layer removal), Step 3 : applying the bonding agent, Step 4 : filling the compomer. Dentin permeability was expressed by hydraulic conductance ($\mu\textrm{l}$ min$^{-1}$cm$H_2O$$^{-1}$). The data were analysed statistically using One-way ANOVA and Sheffe's method. The results were as follows : 1. Dentin permeability differences between each process were significant except between step 1 and step 2(p<0.01). 2. Dentin permeability after removal of smear layer was highly increased(p<0.01). 3. In most case, decrease of dentin permeability was obtained by applying bonding agent(p<0.01). 4. Dentin permeability differences among the experimental groups were not significant(p>0.05). 5. None of compomers used in this study showed perfect seal at the interface.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.243-249
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• 2011

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.208-214
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• 2024

To fabricate intermetallic nanoparticles with high oxygen reduction reaction activity, a high-temperature heat treatment of 700 to 1,000 ℃ is required. This heat treatment provides energy sufficient to induce an atomic rearrangement inside the alloy nanoparticles, increasing the mobility of particles, making them structurally unstable and causing a sintering phenomenon where they agglomerate together naturally. These problems cannot be avoided using a typical heat treatment process that only controls the gas atmosphere and temperature. In this study, as a strategy to overcome the limitations of the existing heat treatment process for the fabrication of intermetallic nanoparticles, we propose an interesting approach, to design a catalyst material structure for heat treatment rather than the process itself. In particular, we introduce a technology that first creates an intermetallic compound structure through a primary high-temperature heat treatment using random alloy particles coated with a carbon shell, and then establishes catalytic active sites by etching the carbon shell using a secondary heat treatment process. By using a carbon shell as a template, nanoparticles with an intermetallic structure can be kept very small while effectively controlling the catalytically active area, thereby creating an optimal alloy catalyst structure for fuel cells.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.132-137
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• 2018

Although the number of chemical accidents has been declining since the Chemical Control Act of 2015, there have been repeated occurrences of similar types of accidents at printed circuit board (PCB) manufacturing facilities. These accidents were caused by the overflow of hydrochloric acid and hydrogen peroxide, which are toxic chemicals used in the printed circuit board manufacturing process. An analysis of the $Cl^-$ content to identify the cause of the accident showed that in the mixed route of hydrochloric acid and hydrogen peroxide, which are accidental substances, the $Cl^-$ concentration was 66.85 ppm in the hydrogen peroxide sample. Through reaction experiments, it was confirmed that the deformation of a PVC storage tank and generation of chlorine gas, which is a toxic gas, occurred due to reaction heat occurring up to $50.5^{\circ}C$. This paper proposes a facility safety management plan, including overcharge, overflow prevention, leak detection device, and separation tank design for mixing prevention in printed circuit board manufacturing facility etch process. To prevent the recurrence of accidents of the same type, the necessity of a periodic facility safety inspection and strengthening of the safety education of workers was discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.17-22
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• 1999

In this paper, the results of the studies about a new proposal where the ONON(oxide-nitride-oxide-nitride) layer instead of the conventional ONO(oxide-nitride-oxide) layer is used as the IPD(inter-poly-dielectrics) layer to improve the data retention problem in the Flash EEPROM cell, have been discussed. For these studies, the stacked-gate Flash EEPROM cell with an about 10nm thick gate oxide and on ONO or ONON IPD layer have been fabricated. The measurement results have shown that the data retention characteristics of the devices with the ONO IPD layer are significantly degraded with an activation energy of 0.78 eV. which is much lower than the minimum value (1.0 eV) required for the Flash EEPROM cell. This is believed to be due to the partial or whole etching of the top oxide of the IPD layer during the cleaning process performed just prior to the dry oxidation process to grow the gate oxide of the peripheral MOSFET devices. Whereas the data retention characteristics of the devices with the ONON IPD layer have been found to be much (more than 50%) improved with an activation energy of 1.10 eV. This must be because the thin nitride layer on the top oxide layer in the ONON IPD layer protected the top oxide layer from being etched during the cleaning process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.