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http://dx.doi.org/10.3740/MRSK.2011.21.5.243

Back Surface Field Properties with Different Surface Conditions for Crystalline Silicon Solar Cells  

Kim, Hyun-Ho (Department of Micro/Nano Systems, Korea University)
Kim, Seong-Tak (Department of Materials Science and Engineering, Korea University)
Park, Sung-Eun (Department of Materials Science and Engineering, Korea University)
Song, Joo-Yong (Department of Materials Science and Engineering, Korea University)
Kim, Young-Do (Department of Materials Science and Engineering, Korea University)
Tark, Sung-Ju (Department of Materials Science and Engineering, Korea University)
Kwon, Soon-Woo (R&D Center, TS Corporation)
Yoon, Se-Wang (R&D Center, TS Corporation)
Son, Chang-Sik (Department of Electronic Materials Engineering, Silla University)
Kim, Dong-Hwan (Department of Micro/Nano Systems, Korea University)
Publication Information
Korean Journal of Materials Research / v.21, no.5, 2011 , pp. 243-249 More about this Journal
Abstract
To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.
Keywords
$\underline{back\surface\field\(BSF)}$; ramp up rates; flat back surface; textured back surface; silicon solar cells;
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