• 한국콘텐츠학회논문지
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• 제18권10호
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• pp.361-367
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• 2018

이 연구의 목적은 불화 수소산 에칭 처리가 안정화된 정방 정계 지르코니아 다결정 (Y-TZP)의 결합 강도에 미치는 영향을 평가하는 것이었다. 4 그룹의 지르코니아 - 수지 시멘트 시편을 준비 하였다. 1) ZGS 그룹 (zirconia, no treatment) 2) ZGSH 그룹 (zirconia, hydrofluoric acid etching treatment) 3) H-ZGS 그룹 (Hybrid zirconia, no treatment) 4) H-ZGSH 그룹 (Hybrid zirconia, hydrofluoric acid etching treatment). 지르코니아와 도재 사이의 전단 결합 강도는 Instron Universal Testing Machine (ModelBBP-500, Instron Corporation, Kyunggi, Korea)을 사용하여 측정 하였다. 독립표본 t-test와 two-way ANOVA (${\alpha}=0.05$)를 사용하여 데이터를 통계적으로 분석했다. 세라믹 - 수지 시멘트 결합강도는 불화 수소산 에칭 처리에 영향을 받았다 (p <0.05). 파단 표면의 디지털 현미경 검사는 불화 수소산 에칭 처리한 표면처리 된 지르코니아 및 하이브리드 지르코니아 그룹에서 접착성 및 응집성 파절이 동시에 발생하는 결함을 보였다.

• Korean Chemical Engineering Research
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• 제58권3호
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• pp.474-479
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• 2020

유리기판의 박막화를 위한 식각액을 제조하였고, 습식 식각액의 주성분으로 HF를 사용하였다. HF를 기본으로 한 식각액에 HCl, HNO₃, H₂SO₄와 같은 강산과 구연산과 같은 카르복실산 그리고 여러 종류의 아미노산을 첨가물로 각각 사용한 식각액으로 유리의 식각속도와 표면형상의 변화를 측정하였다. 강산의 종류와 상관없이 첨가량이 증가함에 따라 선형적으로 유리의 식각속도가 증가하였으며 유리표면의 슬러지 제거효과도 나타내었다. HCl이 함유된 식각액이 식각속도의 증가율과 슬러지 제거 효과에서 다른 강산보다 효율적인 결과를 보였다. 카르복실산의 첨가는 식각속도에 영향을 크게 주지 않으나 슬러지 제거효과를 보였다. 하지만 아미노산을 첨가한 경우에는 식각속도의 변화와 슬러지 제거 효과가 크지 않았다.

• Nuclear Engineering and Technology
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• 제35권6호
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• pp.507-514
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• 2003

Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of $UO_2$, Co, and Mo in r.f. plasma with the etchant gas of $CF_4/O_2$ mixture. $UO_2$ is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of $UO_2\;in\;CF_4/O_2$ mixture gas is $20\%$, regardless of temperature and r.f. power. In case of $UO_2$, the highest etching reaction rate is greater than 1000 monolayers/min. at $370^{\circ}C$ under 150 W r.f. power which is equivalent to $0.4{\mu}m/min$. As for Co, etching reaction begins to take place significantly when the temperature exceeds $350^{\circ}C$. Maximum etching rate achieved at $380^{\circ}C\;is\;0.06{\mu}m/min$. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at $380^{\circ}C\;is\;1.9{\mu}m/min$. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated.

• 한국결정성장학회지
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• 제8권2호
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• pp.249-254
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• 1998

GaN계 재료의 습식 화학식각 특성과 광 화학 및 전기 화학 및 전기 화학 습식식각 특성을 연구하였다. n형 GaN는 상온에서 NaOH 수용액에 식각되었으며 식각두께는 식각시간에 선형적으로 증가하였다. 또 광 조사 및 전기 화학을 가할 경우 식각율은 수배로 증가하였으며, 식각율은 $1{\times}10^{19};cm^{-3}$의 전자농도를 갖는 시료에서 광 조사시 최대 164${\AA}$/min을 얻었다. n-GaN의 식각율은 GaN의 전자농도에 크게 의존하는 특성을 나타내었으며 이러한 식각과정을 논의하였다. $SiO_2$ 박막으로 덮여진 100${\mu}m{\times}100{\mu}m$ 모양의 옆 식각면은 방향성을 갖지 않고 수직하였으며, 넓은 면적에서 매우 평탄하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• 공업화학
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• 제20권2호
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• pp.172-176
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• 2009

Solder resist ink와 회로표면과의 밀착력 향상을 위해 사용되는 soft etching 제의 기본 조성으로 과산화수소와 황산을 선정하고 inhibitor, 계면활성제, 안정제를 첨가하여 에칭 속도 $0.7{\sim}1{\mu}m/min$, 표면조도(Ra)값 $0.5{\sim}0.6{\mu}m$을 만족시키는 soft etching 제 개발을 위한 연구를 하였다. Inhibitor로는 butyl amine, cyclohexyl amine, 5-aminotetrazole (5-Azol)을 첨가하였으며 계면활성제로는 polyethylene glycol (PEG), polyethylene imine (PEI), piperidine을 안정제로는 butyl alcohol, isopropanol, 인산을 첨가하여 각각의 첨가제가 에칭 속도 및 표면조도에 미치는 영향을 비교 분석하였다. 본 연구 결과 과산화수소 3% 황산 4%에 5-Azol 500 ppm, PEI 600 ppm, 인산 10 ppm 첨가 시 $0.7~1{\mu}m/min$을 만족시키는 에칭속도와 가장 좋은 표면조도를 갖는 것을 확인하였으며 solder test 결과 solder resist ink의 들뜸 현상이 발생하지 않는 것을 확인하였다.

• 구강회복응용과학지
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• 제23권4호
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• pp.269-281
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• 2007

Fluoric acid etching is an essential procedure in cementation of reinforced ceramics to tooth surface. But there have been few studies about the changes of surface structure and flexural strength of IPS $Empress^{(R)}$ 2 ceramic according to the etching time. The objectives of this study were to examine the surface structure changes and the difference in biaxial flexural strength of IPS $Empress^{(R)}$ 2 ceramic according to various etching times. Sixty one disk-shaped specimens of IPS $Empress^{(R)}$ 2 ceramic($14mm{\times}1.2mm$) were fabricated for the biaxial flexural strength test and SEM analysis according to the manufacturer's recommendations. Sixty specimens were divided into 6 groups(n=10) according to the time of HF acid etching(0, 20, 180 and 300s)and silane/resin cement application. Each disk was loaded using a piston-on-3 ball biaxial configuration in a universal testing machine. The failure loads(N) were recorded, and the biaxial flexural strength for each disk was calculated. A one-way analysis of variance and independent t-test on transformed fracture strength data were used to determine significant differences between groups. The groups of no cementation showed a trend toward progressive weakening with increasing the etching time. However, this was not statistically significant at p=0.05 level. The groups of resin cementation exhibited no apparent trend in their mean strength values. SEM photomicrographs showed very different results of etching. Within the conditions of this study, alteration of surface topography by acid etching does not have a deleterious effect on the biaxial flexural strength of IPS $Empress^{(R)}$ 2 ceramic.

• ETRI Journal
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• 제24권3호
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• pp.211-220
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• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.