• The Journal of Advanced Prosthodontics
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• v.7 no.3
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• pp.224-232
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• 2015

PURPOSE. The purpose of this study was to find out the effect of immediate dentin sealing (IDS) on bond strength of ceramic restoration under various thermocycling periods with DBA (dentin bonding agent system). MATERIALS AND METHODS. Fifty freshly extracted human mandibular third molars were divided into 5 groups (1 control and 4 experimental groups) of 10 teeth. We removed enamel layer of sound teeth and embedded them which will proceed to be IDS, using All Bond II. A thermocycling was applied to experimental groups for 1, 2, 7, 14 days respectively and was not applied to control group. IPS Empress II for ceramic was acid-etched with ceramic etchant (9.5% HF) and silane was applied. Each ceramic disc was bonded to specimens with Duo-link, dual curable resin cement by means of light curing for 100 seconds. After the cementation procedures, shear bond strength measurement and SEM analysis of the fractured surface were done. The data were analyzed with a one-way ANOVA and Tukey multiple comparison test (${\alpha}$=.05). RESULTS. There were no statistically significant differences between 4 experimental groups and control group, however the mean value started to decrease in group 7d, and group 14d showed the lowest mean bond strength in all groups. Also, group 7d and 14d showed distinct exposed dentin and collapsed hybrid layer was observed in SEM analysis. CONCLUSION. In the present study, it can be concluded that ceramic restorations like a laminate veneer restoration should be bonded using resin cement within one week after IDS procedure.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.74-80
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• 1994

Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..

• Restorative Dentistry and Endodontics
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• v.13 no.1
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• pp.41-52
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• 1988

The purpose of this study was to investigate the pulpal responses to acid etching of dentine. Total 72 class V cavaties' were prepared on the healthy permanent teeth from 6 dogs, and were divided into 4 groups. These were filled with filling materials after acid etching with each etchant for 1 min. Control group ; ZOE filling without acid etching. Group 1: Zinc Oxide-Eugenol cement filling. Group 2: Drying with hot air and Zinc oxide-Eugenol cement filling. Group 3: Scotchbond application and silux filling. Group 4: Silux filling. The dogs were sacrificed after 1 week, 2 weeks, 3 weeks, 4 weeks, 5 weeks and 6 weeks following operation. The specimens were routinely prepared and stained with Hematoxylin and Eosin. Followings were the results obtained through microscopic examination. 1. There was mostly severe pulpal responses in case of Silux filling after acid etching of dentine. 2. The pulpal responses of Silux filling after acid etching and application of Scotch bond group were more severe compared to Zinc Oxide-Eugenol cement filling group, but less severe compared to Silux filling group after acid etching of dentine. 3. The pulpal responses of Zinc Oxide-Eugenol cement filling group were similar to those of Zinc Oxide-Eugenol cement filling after drying with hot air group. 4. There was slight pulpal responses in early stage in case of Zinc Oxide-Eugenol cement filling group, but recovered to normal state soon after.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.803-809
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• 2005

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

• Resources Recycling
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• v.19 no.5
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• pp.44-49
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• 2010

SiC powders have been recovered from silicon-containing waste slurry by carbothermal reduction method with carbon black. Large amount of silicon-containing waste slurry is generated from Solar Cell industry. In an environmental and economic point of view, retrieve of the valuable natural resource from the silicon waste is important. In this study, SiC powder recovered by the reaction ball-milled silicon powder from waste and carbon black at $1350^{\circ}C$ for 3h under vacuum condition. Physical properties of samples have been characterized using SEM, XRD, Particle size analyzer and FT-IR spectroscopy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• Nuclear Engineering and Technology
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• v.35 no.6
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• pp.507-514
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• 2003

Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of $UO_2$, Co, and Mo in r.f. plasma with the etchant gas of $CF_4/O_2$ mixture. $UO_2$ is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of $UO_2\;in\;CF_4/O_2$ mixture gas is $20\%$, regardless of temperature and r.f. power. In case of $UO_2$, the highest etching reaction rate is greater than 1000 monolayers/min. at $370^{\circ}C$ under 150 W r.f. power which is equivalent to $0.4{\mu}m/min$. As for Co, etching reaction begins to take place significantly when the temperature exceeds $350^{\circ}C$. Maximum etching rate achieved at $380^{\circ}C\;is\;0.06{\mu}m/min$. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at $380^{\circ}C\;is\;1.9{\mu}m/min$. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.417-427
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• 1992

Silicon ion implantation was performed to LPCVD amorphous Si films and the low temperature annealing process followed with various conditions to find the optimal physical properties by studying recrystallization behavior. The uniformity of the recrystallized films was inspected by optical microscopy and for this purpose, new KOH: (IPA) : $H_2$O: $K_2$C${r_2}{O_7}$, etchant was developed. XRD and TEM results showed that the crystallites were grown as a form of dendrite with (111) preferred orientation, and the grain size was increased with dose concentration. The maximum grain size was obtained when the 3${\times}{10^{15}}$c$m^2$ implanted amorphous Si film was recrystallized at 55 $0^{\circ}C$for more than 40 hrs and at this condition the grain size was 3.2${\mu}$m.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.137-144
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• 1998

High-temperature superconducting joints between 61 filaments of Bi-2223 tapes were fabricated by chem-ical corrosion and repeated thermomechanical process. The silver sheath of the superconducting tape was chemically removed using chemical etchant(NH4OH:H2O2=1:1) from one side of each tape without altering the form of lap joint. The joined region was formed by uniaxial pressing and a series of thermomechanical process and then subjected to properties measurement and microstructural analysis. The critical current(Ic) variation and I-V characteristics along the joint were mesured with several configuration of proble points. Ic value of the transition region of the joint inthe multifilament tape which limit the total current carring capacity of the superconducting tape was higher than that of monofilament tape. But the transition ex-ponent n-value of the multi-filament tape was lower than that of monofilament wire due to the interaction of the individual superconducting core of the multi-filament. The critical current through the joint area was improved by respeated press and reaction annealing treatment.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.181-187
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• 1993

We have studied the anodic oxidation of silicon in the anisotropic etchant of EPW(Ethylenediamine, Pyrocatechol and Water) solution using the cyclic polarization technique. The samples have been characterized by means of X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The results of cyclic polarization experiments show that the anodic oxides formed on p- and n-type silicon wafers break down at the same potential while breakdown does not occur up to open circuit potential in the case of $p^+$-Si. Strong etch-resistance of $p^+$-XPS. SIMS depth profiles suggest that the critical concentration of boron for etch-stop to occur appears to be much higher than what is widely believed.