• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.126-129
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.112-116
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• 2000

This paper presents anisotropic ethcing characteristics of single-crystal silicon in tetramethylammonium hydroxide(TMAH):isopropyl alcohol(IPA) solutions containing pyrazine. With the addition of IPA to TMAH solutions, etching characteristics are exhibited that indicate an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of $0.8\;{\mu}m/min$, which is faster by 13 % than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH:0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased if more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front were not observed and the undercutting ratio was reduced by 30 ~ 50 %.

• 한국진공학회지
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• 제5권3호
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• pp.263-267
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• 1996

Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.741-744
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• 2001

This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• 한국진공학회지
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• 제8권4A호
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• pp.476-481
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• 1999

Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

• Corrosion Science and Technology
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• 제10권1호
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• pp.37-42
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• 2011

Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the aluminum electrolytic capacitor electrode. Capacitance of aluminum electrolytic capacitor is closely related with surface area, which depends on size and number of etch pits. Size of etch pits need to be controlled because inside of the pits can be buried by the formation of dielectric oxide film. In this work, the effect of ultrasound pretreatment on the aluminum etch pit formation and capacitance were investigated. Additionally, the relationship between the second etching effect on pit size and capacitance was studied.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.94-97
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• 1989

It is shown that fundamental plasma characteristic, which are sheath voltage and ion concentration, can be derived from measuring RF impedence. Plasma characteristics from this simple method are verified by direct measuring, to be reasonable. Using these values a new relation between isotropy and the ratio of sheath voltage to ion concentration is derived. For etch in which $CF_4$ is used, anisotropic etch can be achieved in its order $10^{-12}Vcm^3$ and isotropic etch in $10^{-12}Vcm^3$. These results are useful in every asymetric diode type etch system.