• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.701-707
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• 2004

High aspect ratio silicon structure through deep silicon etching process have become indispensable for advanced MEMS applications. In this paper, we present the results of modified Bosch process to obtain anisotropic silicon structure with conventional Inductively Coupled Plasma (ICP) etcher instead of the expensive Bosch process systems. In modified Bosch process, etching step ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) step time is much longer than commercialized Bosch scheme and process transition time is introduced between process steps to improve gas switching and RF power delivery efficiency. To optimize process parameters, etching ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) time and ion energy effects on etching profile was investigated. Etch profile strongly depends on the period of etch / passivation and ion energy. Furthermore, substrate temperature during etching process was found to be an important parameter determining etching profile. Test structures with different pattern size have been etched for the comparison of the aspect ratio dependent etch rate and the formation of silicon grass. At optimized process condition, micropatterns etched with modified Bosch process showed nearly vertical sidewall and no silicon grass formation with etch rate of 1.2 ${\mu}{\textrm}{m}$/ min and the size of scallop of 250 nm.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.139-143
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• 2012

Optical emission spectroscopy (OES) is often used for real-time analysis of the plasma processes. OES has been suggested as a primary plasma process monitoring tool. It has the advantage of non-invasive in-situ monitoring capability but selecting the proper wavelengths for the analysis of OES data generally relies on empirically established methods. In this paper, we propose a practical method for the selection of OES wavelength peaks for the analysis of plasma etch process and this is done by investigating reactants and by-product gas species that reside in the plasma etch chamber. Wavelength selection criteria are based on the standard deviation and correlation coefficients. Moreover, chemical actinometry is employed for the normalization of the selected wavelengths. We also present the importance of chemical actinometry of OES data for quantitative analysis of plasma. Then, the suggested OES peak selection method is employed.. This method is used to find out the reason behind abnormal etching of PR erosion during a series of $SiO_2$ etch processes using the same recipe. From the experimental verification, we convinced that OES is not only capable for real-time detection of abnormal plasma process but it is also useful for the analysis of suspicious plasma behavior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.687-692
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• 2011

Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.863-866
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• 2008

For the cost reduction in the fabrication of display panels, a reverse moving system was equipped to a compacted in-line wet etch/cleaning system. For the effect of the alternating movement of substrate on the wet etch process, ITO layers were etched in various moving modes of substrates and the results were compared and analyzed.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.922-925
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• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

• Journal of Magnetics
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• v.20 no.4
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• pp.366-370
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• 2015

New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

• Journal of the Speleological Society of Korea
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• no.78
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.328-332
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• 2012

Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.316-316
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• 2012

본 연구에서는 Si wafer에 마스크 공정 및 Slit-etching 공정을 적용하여 25 um 피치의 probe unit을 개발하기 위해 Deep Si Etching 장비를 이용하여 식각공정 조건에 따른 특성을 평가하였다. 25 um pitch는 etch 폭의 크기에 따라 3종류로 설계하였으며, 식각공정은 2수준, 4인자 실험계획법에 의해 8회 실험을 수행하였다. 실험계획법에 의해 미니탭을 활용하여 최적조건을 구한 결과 12.5 um etch 폭에서는 가스유량은 200 sccm, 에칭시간 7 sec, 코일 파워 1500W, 에칭 압력은 43.7 mtorr의 조건이 etch 형태 및 profile angle이 목표치에 근접한 결과를 얻었다. 또한 probe pitch를 30~60 um까지 증가시켰을 경우 Etch depth는 증가하였으며, 식각율 또한 증가한 현상을 보였다. 재현성 실험을 위해 위의 최적조건을 이용하여 2회 반복하여 실험한 경우 모든 시편이 목표치에 도달하였다. 이는 미세피치화 되는 프로브 유닛의 기초데이터로 활용될 수 있다.