The Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher |
조수범
(인하대학교 정보통신공학과)
박세근 (인하대학교 정보통신공학) 오범환 (인하대학교 정보통신공학과) |
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Comparison of Cl₂ and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma sources
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DOI ScienceOn |
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Characterization of a time multiplexed inductively coupled plasma etcher
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DOI |
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Controlling sidewall smoothness for micromachined Si mirrors and lens
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DOI ScienceOn |
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Microscopic uniformity in plasma etching
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DOI ScienceOn |
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<TEX>$SF_6$</TEX>/Cl₂ 혼합비에 따른 실리콘 식각 특성 고찰
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과학기술학회마을 |
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Highly anisotropic silicon reactive ion etching for nanofabrication using mixture of <TEX>$SF_{6}/CHF_{3}$</TEX>gas micrograss
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DOI ScienceOn |
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Effect of process parameters on the surface morphology and mechnical performance of silicon structure after deep reactive ion etching
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DOI ScienceOn |
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TMAH/IPA의 실리콘 이방성 식각특성
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과학기술학회마을 |
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결정의존성 식각/기판접합을 이용한 MEMS용 구조물의 제작
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과학기술학회마을 |
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Low temperature reactive ion etching of silicon with <TEX>$SF_6$</TEX>O₂ plasma
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DOI ScienceOn |