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http://dx.doi.org/10.4313/JKEM.2011.24.9.687

Characteristics of HfO2 Thin Films Using Wet Etching  

Yang, Jeung-Ryoul (Technosemichem Co., Ltd.)
Kwak, Noh-Seok (Department of Chemical Engineering, Chungnam National University)
Lim, Jung-Hun (Technosemichem Co., Ltd.)
Choi, Yong-Jae (Technosemichem Co., Ltd.)
Hwang, Taek-Sung (Department of Chemical Engineering, Chungnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.9, 2011 , pp. 687-692 More about this Journal
Abstract
Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.
Keywords
Wet etch; $HfO_2$; HF; $SiO_2$; Selectivity;
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