• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.190-198
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• 2010

Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

• International Journal of Ocean System Engineering
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• v.2 no.2
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• pp.106-115
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• 2012

In the present study, TiN and CrN films were coated by arc ion plating equipment onto aluminum alloy substrate, A2024. The film thickness was about 4.65 ${\mu}m$. TiN and CrN films were analyzed by X-ray diffraction and energy dispersive X-ray equipments. The Young's modulus and the micro-Vickers hardness of aluminum substrate were modified by the ceramic film coatings. The difference in Young's modulus between substrate and coating film would affect on the wear resistance. The critical load, Lc, was 75.8 N for TiN and 85.5 N for CrN. It indicated from the observation of optical micrographs for TiN and CrN films that lots of cracks widely propagated toward the both sides of scratch track in the early stage of MODE I. TiN film began to delaminate completely at MODE II stage. The substrate was finally glittered at MODE III stage. For CrN film, a few crack can be observed at MODE I stage. The delamination of film was not still occurred at MODE II and then was happened at MODE III. This agrees with critical load measurement which the adhesive strength was greater for CrN film than for TiN film. Consequently, it was difficult for CrN to delaminate because the adhesive strength was excellent against Al substrate. The wear process, which the film adheres and the ball transfers, could be enhanced because of the increase in loading. The wear weight of ball was less for CrN than for TiN. This means that the wear damage of ball was greater for TiN than for CrN film. It is also obvious that it was difficult to delaminate because the CrN coating film has high toughness. The coefficient of friction was less for CrN coating film than for TiN film.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.269-272
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• 2004

Printed circuit boards (PCB) replaced conventional wiring in most electronic equipment I, reducing the size and weight of electronic equipment while improving reliability, uniformity, precision and performance. PCB is used in all kinds of electronic products because they can be mass-produced with very high circuit density and also enable easier trouble-shooting. This paper presents the analyses of the patent information of Build-up PCB which is seen as the most promising solution, as its substrate supports multi-level packaging, thinner board profiles and smaller pitches.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1123-1126
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• 2005

For creation of low temperature polycrystallinesilicon (LTPS) the line beam excimer laser annealing (ELA) is a well known and established technique in mass production. With introduction of Sequential Lateral Solidification (SLS) some aspects such as crystalline quality, throughput and flexibility regarding the substrate size could be improved, but for OLED manufacturing still further process development is necessary. This paper discusses line beam ELA and SLS techniques that might enable process engineers to make polycrystalline-silicon (poly-Si) films with a high degree of uniformity and quality as required for system on glass (SOG) and active matrix organic light emitting displays (AMOLED). Equipment requirements are discussed and compared to previous standards. SEM images of process examples are shown in order to demonstrate the viability.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.234-237
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• 2007

We fabricated nano-structures of the anodic aluminum oxides on sapphire substrates. Two processes of nano-structured sapphire surface have present: the one is the template mask and the other is the anodic oxidized aluminum deposited on sapphire substrate. The formation of nano-structures has investigated by FE-SEM measurement. The etched surface by the template showed periodic lattice but the deposited surface showed the randomly distributed phase of nanoholes instead of the periodic lattice.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.27-33
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• 2002

The residual thermal stresses at the interface corner between the elastic substrate and the viscoelastic thin film due to cooling from cure temperature down to room temperature have been studied. The polymeric thin film was assumed to be thermorheologically simple. The boundary element method was employed to investigate the nature of stresses on the whole interface. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity might lead to edge cracks or delamination.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.102-105
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.11B
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• pp.1403-1412
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• 2011

This study performed a detecting research of promising R&D field utilizing intuitive methodology regarding OLED illumination industry. For this, 69 professionals of the illumination industry in Korea were composed as a panel to hold an in-depth interview and survey for 1 month. The study classified the OLED illumination industry as 4 fields of panel, material/component for panel, manufacturing equipment, and lighting system, and selected core technology for each field, and divided it into a total of 14 possible fields for R&D. As a result of evaluating the technological competitive power for each field, the field in Korea which received the highest technological competitive power was OLED panel, and contrarily, technological competitive power of material/component for OLED panel showed the lowest, which requires improvement Meanwhile, evaluating economical aspect, conformity to policy, and effectiveness of R&D in general, 7 promising R&D fields were selected. The 4 core technologies of OLED panel, which are, white, transparent, color change and flexible OLED manufacturing technology were evaluated as the most promising fields, and next, organic material for surface light source, material/component for substrate and equipment for forming large sized substrate were evaluated as promising fields.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.529-529
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• 2006

Several laboratories worldwide have demonstrated the feasibility of producing amorphous silicon thin film transistor (TFT) arrays at temperatures that are sufficiently low to be compatible with flexible foils such as stainless steel or high temperature polyester. These arrays can be used to fabricate flexible high information content display prototypes using a variety of different display technologies. However, several questions must be addressed before this technology can be used for the economic commercial production of displays. These include process optimization and scale-up to address intrinsic electrical instabilities exhibited by these kinds of transistor device, and the development of appropriate techniques for the handling of flexible substrate materials with large coefficients of thermal expansion. The Flexible Display Center at Arizona State University was established in 2004 as a collaboration among industry, a number of Universities, and US Government research laboratories to focus on these issues. The goal of the FDC is to investigate the manufacturing of flexible TFT technology in order to accelerate the commercialization of flexible displays. This presentation will give a brief outline of the FDC's organization and capabilities, and review the status of efforts to fabricate amorphous silicon TFT arrays on flexible foils using a low temperature process. Together with industrial partners, these arrays are being integrated with cholesteric liquid crystal panels, electrophoretic inks, or organic electroluminescent devices to make flexible display prototypes. In addition to an overview of device stability issues, the presentation will include a discussion of challenges peculiar to the use of flexible substrates. A technique has been developed for temporarily bonding flexible substrates to rigid carrier plates so that they may be processed using conventional flat panel display manufacturing equipment. In addition, custom photolithographic equipment has been developed which permits the dynamic compensation of substrate distortions which accumulate at various process steps.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.37-43
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• 2007

We developed the equipment to measure the MTF(modulation transfer function) of an optical system for automatically inspecting the surface condition of an LCD substrate. We have made an object generator with USAF(United States Air Force) targets of three bar patterns and an integrating sphere, and an image analyzer with a 2 dimensional CCD(charge coupled device) and a relay lens. The MTF of the lens under test was obtained by correcting the measured CTF(contrast transfer function) which is the ratio of the contrast in the image of the USAF target to the contrast in the object. We have measured an optical system of F/13.65 (2.6x), the MTF are 30.6 % tangential plane and 26.1 % sagittal plane at 62.5 1p/mm.