OLED용 Al 음전극 제작 및 I-V 특성

  • 금민종 (경원대학교 전기정보공학과) ;
  • 권경환 (경원대학교 전기정보공학과)
  • 발행 : 2005.09.01

초록

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement.

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