• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.164-168
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• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.

• Corrosion Science and Technology
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• v.11 no.2
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• pp.65-69
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• 2012

One dimensional(1D) $Na_2Ti_6O_{13}$ nanorods with 70 nm in diameter was synthesized by a molten salt method. Using the synthesized nanorods, about 750 nm thick $Na_2Ti_6O_{13}$ film was coated on Fluorine-doped tin oxide(FTO) glasss substrate by the Layer-by-layer self-assembly(LBL-SA) method in which a repetitive self-assembling of ions containing an opposite electric charge in an aqueous solution was utilized. Using the Kubelka-Munk function, the band gap energy of the 1D-$Na_2Ti_6O_{13}$ nanorods was nalyzed to be 3.5 eV. On the other hand, the band gap energy of the $Na_2Ti_6O_{13}$ film coated on FTO was found to be a reduced value of 2.9 eV, resulting from the nano-scale and high porosity of the film processed by LBL-SA method, which was favorable for the photo absorption capability. A significant improvement of photocurrent and onset voltage was observed with the $Na_2Ti_6O_{13}$ film incorporated into the conventional $Fe_2O_3$ photoelectrode: the photocurrent increased from 0.25 to 0.82 mA/$cm^2$, the onset voltage decreased from 0.95 to 0.78 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• Korean Journal of Materials Research
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• v.32 no.1
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• pp.14-22
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• 2022

To improve light absorption ability in the visible light region and the efficiency of the charge transfer reaction, Pd nanoparticles decorated with reduced TiO₂ nanotube photocatalyst were synthesized. The reduced TiO₂ nanotube photocatalyst was fabricated by anodic oxidation of Ti plate, followed by an electrochemical reduction process using applied cathodic potential. For TiO₂ photocatalyst electrochemically reduced using an applied voltage of -1.3 V for 10 min, 38% of Ti⁴⁺ ions on TiO₂ surface were converted to Ti³⁺ ion. The formation of Ti³⁺ species leads to the decrease in the band gap energy, resulting in an increase in the light absorption ability in the visible range. To obtain better photocatalytic efficiency, Pd nanoparticles were decorated through photoreduction process on the surface of reduced TiO₂ nanotube photocatalyst (r10-TNT). The Pd nanoparticles decorated with reduced TiO₂ nanotube photocatalyst exhibited enhanced photocurrent response, and high efficiency and rate constant for aniline blue degradation; these were ascribed to the synergistic effect of the new electronic state of the TiO₂ band gap energy induced by formation of Ti³⁺ species on TiO₂, and by improvement of the charge transfer reaction.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.205-211
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• 2019

Over the past several decades, the polymer dispersed liquid crystal (PDLC) has received particular attention as a material for developing smart window due to their electro-optical switchable properties. In this study, PDLC cells were fabricated using acrylate monomers, namely 2-hydroxyethyl acrylate (2-HEA) and ethylene glycol phenyl ether acrylate (EGPA), and the effect of the monomer composition on their electro-optical properties was investigated. The monomer mixture with a low viscosity (~10 cps) was easily filled between indium tin oxide (ITO) glasses by capillary action at room temperature. PDLC cells prepared using the mixture ratio of 1 : 9 (2-HEA : EGPA) did not show a complete opaque state at a 0 V condition but exhibited unstable electro-optical properties under an electric field. As the LC composition increased in the reaction mixture for PDLC cell preparation, the $V_{th}$ (threshold voltage) and $V_{sat}$ (saturation voltage) values as well as contrast ratio (CR) increased. $V_{th}$ and $V_{sat}$ values also increased with the cell gap thickness. PDLC cells with a $20{\mu}m$ cell gap thickness exhibited higher CR than those with 10 and $40{\mu}m$ cell gap thicknesses. Particularly, PDLC cells prepared using the mixture ratio of 7 : 3 (2-HEA : EGPA) showed excellent electro-optical properties such as a low driving voltage and high contrast ratio.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1959-1961
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• 1999

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

• Korean Chemical Engineering Research
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• v.53 no.5
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• pp.609-613
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• 2015

The onset of instability induced by impulsive spin-down of the rigid-body flow placed in the gap between two coaxial cylinders is analyzed by using the energy method. In the present stability analysis the growth rate of the kinetic energy of the base state and also that of disturbances are taken into consideration. In the present system the primary flow is a transient, laminar one. But for the Reynolds number equal or larger than a certain one, i.e. $Re{\geq}Re_G$ secondary motion sets in, starting at a certain time. For $Re{\geq}Re_G$ the dimensionless critical time to mark the onset of vortex instabilities, ${\tau}_c$, is here presented as a function of the Reynolds number Re and the radius ratio ${\eta}$. For the wide gap case of small ${\eta}$, the transient instability is possible in the range of $Re_G{\leq}Re{\leq}Re_S$. It is found that the predicted ${\tau}_c$-value is much smaller than experimental detection time of first observable secondary motion. It seems evident that small disturbances initiated at ${\tau}_c$ require some growth period until they are detected experimentally.

• Journal of the Korean Applied Science and Technology
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• v.26 no.2
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• pp.132-142
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• 2009

The benzophenone derivatives(4-$CH_3O$-4'-$NO_2$ and 3,4'-di-$NO_2$) are synthesized by the Fridel-Craft acylation and the nitration method. Electrochemical redox potentials of the benzophenone derivatives (4-$CH_3O$, H, 3-Cl, 3-$NO_2$, 4-$NO_2$, 4-$CH_3O$-4'-$NO_2$, 3,4'-di-$NO_2$) are measured by using cyclic voltammometry. In the relationship of summing Hammett value and redox potential, we find a proportional constant$(\rho)$ that shows a good relation with an electrochemical property and a reactivity of the benzophenone derivatives. The benzophenone substituted with the electron donating groups(4-$OCH_3$ and 4-$OCH_3-4'-NO_2$) are higher the energy in the LUMO level, then increasing a band-gap energy$(E_g)$, their $E_gs$ are obtained as a 3.94 eV and 3.59 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.539-545
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• 2001

Undoped and Co$^{2+}$ $\alpha$-Ga$_2$S$_3$ thin films were grown by spray pyrolysis method. It has been found that these thin films have a monoclinic structure and direct optical energy gap and indirect were located to 3.477eV and 3.123 eV at 10K respectively. In the photoluminescence due to a D0A(donor-acceptor) pair recombination were observed at 502 nm and 671 nm for the $\alpha$-Ga$_2$S$_3$ thin film, where is excited by the 325 nm-line of He-Cd laser. These peaks are identified to be corresponding to the electron transition between the energy levels of Co$^{2+}$ ion sited a the T$_{d}$ symmetry point in the $\alpha$-Ga$_2$S$_3$;Co$^{2+}$ thin film. film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.677-681
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• 2009

$In_xGa_{1-x}N$ alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at $800\;^{\circ}C$. TMGa, TMIn and $NH_3$ were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in $In_xGa_{1-x}N$ films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of $In_xGa_{1-x}N$ films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for $In_xGa_{1-x}N$ alloys were well fit with a bowing parameter of 2.27.