Optical Properties of $Sb_2S_3$ and Ag Doped $Sb_2S_3$ Thin Films

$Sb_2S_3$ 박막과 Ag 도핑한 $Sb_2S_3$ 박막의 광학적인 특성

  • Kim, Jong-Ki (Dept. of Electronic Materials Eng., Kwangwoon University) ;
  • Park, Jung-Il (Dept. of Electronic Materials Eng., Kwangwoon University) ;
  • Lee, Hyun-Yong (Center for Teraherz Photonics, POSTECH) ;
  • Lee, Young-Jong (Dept. of Electronics, Yeo Joo Institute of Technology) ;
  • Chung, Hong-Bay (Dept. of Electronic Materials Eng., Kwangwoon University)
  • 김종기 (광운대학교 공대 전자재료공학과) ;
  • 박정일 (광운대학교 공대 전자재료공학과) ;
  • 이현용 (포항공대 Terahertz Photonics 연구단) ;
  • 이영종 (여주대학교 전자공학과) ;
  • 정홍배 (광운대학교 공대 전자재료공학과)
  • Published : 1999.07.19

Abstract

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

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