• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• Advances in materials Research
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• 제12권3호
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• pp.179-192
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• 2023

We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

• Advances in nano research
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• 제15권5호
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• pp.385-399
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• 2023

Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

• Korean Chemical Engineering Research
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• 제56권4호
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• pp.585-591
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• 2018

미세액적 유동반응기 공정에서 제조된 나노구조 $SiO_2:Zn$ 원환형 입자의 특성을 밴드갭 에너지와 표면 반응성의 관점에서 고찰하였다. $SiO_2:Zn$ 원환형 입자를 단일 공정에서 연속적이며 합리적인 생산 효율로 첨가제인 THAM (tris(hydroxymethyl)-aminomethane)과 도핑되는 $Zn^{2+}$ 이온의 농도 변화에 따라 성공적으로 제조할 수 있었다. 그리고 $Zn^{2+}$ 이온의 도핑은 $Si^{4+}$ 이온의 conduction band 보다 에너지 레벨이 낮은 $Zn^{2+}$ 이온의 acceptor level을 형성함으로써 $SiO_2:Zn$ 원환형 입자의 밴드갭 에너지를 줄일 수 있었다. 또한, 입자의 원환형 구조는 $SiO_2:Zn$ 입자의 밴드갭 에너지를 감소시키는데 기여하였다. 따라서 $Zn^{2+}$ 이온이 도핑된 $SiO_2:Zn$ 원환형 입자는 표면에 SiO-H의 형성과 산소 결함의 생성으로 표면 반응성을 증대시킬 것으로 사료되었다.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.177-181
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• 2018

We prepared ZnS thin films via chemical bath deposition (CBD) in an aqueous solution of ammonia ($NH_3$) and hydrazine ($N_2H_4$). The composition ratio of hydrazine used was 0%, 17%, 22%, 29%, or 50%. We investigated the effects of hydrazine and ammonia on the growth, and the structural and optical properties of ZnS in terms of surface uniformity, voids, and grain size. We found that during the growth of ZnS films, hydrazine was very effective for improving the surface morphology and layer uniformity with fast layer formation, while it had no effect on the bandgap energy, $E_g$.

• 전기의세계
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• 제26권6호
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• pp.86-92
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• 1977

The phenomenon of non-steady-state current flow through the interface traps during the dielectric relaxation of MOS device is presented. Experimental method is also described for determining the energy distribution of interface traps, which is based on isothermal dielectric relaxation current technique. Actually, the energy distribution of interface traps was obtained by measuring the transient current through the traps at Si-SiO$_{2}$ interface only in lower-half of the bandgap. It is shown that the trap energy distributio has peak value 1.72*10$^{13}$ cm$^{-2}$ eV$^{-1}$ near 0.73eV approximately.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.221-239
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• 2014

The global demand for energy has been increasing since past decades. Various technologies have been working to find a suitable alternative for the generation of sustainable energy. Photovoltaic technologies for solar energy conversion represent one of the significant routes for the green and renewable energy production. Despite of remarkable improvement in solar cell technologies, the generation of power is still suffering with lower energy conversion efficiency, high production cost, etc. The major problem in improving the PV efficiency is spectral mismatch between the incident solar spectrum and bandgap of a semiconductor material used in solar cell. Luminescent materials such as rare-earth doped phosphor materials having the quantum efficiency higher than unity can be helpful for photovoltaic applications. Quantum cutting phosphors are the most suitable candidates for the generation of two or more low-energy photons for the absorption of every incident high-energy photons. The phosphors which are capable of converting UV photon to visible and near-IR (NIR) photon are studied primarily for photovoltaic applications. In this review, we will survey various near IR quantum cutting phosphors with respective to their synthesis method, energy transfer mechanism, nature of activator, sensitizer and dopant materials incorporation and energy conversion efficiency considering their applications in photovoltaics.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• 에너지공학
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• 제22권1호
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• pp.58-81
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• 2013

탄화규소(SiC)나 질화갈륨(GaN)과 와이드갭 반도체를 이용한 전력소자의 생산기술이 크게 발전하여 그간 널리 사용되어 온 실리콘(Si) 전력소자와 비교하여 작동전압, 스위칭 속도 및 on-저항 등이 크게 향상되어 몇 개 기업은 제품화를 시작하였다. 내압 등 기술적 과제 등을극복하여 산업화를 하고자하는 움직임을 소개하고 아울러 연구동향도 분석한다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.50.2-50.2
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• 2018

The demand for steady and dependable power sources is very high in the field of sustainable energy because of the limited amount of fossil fuels reserves. Among several sustainable alternatives, solar energy may be the most efficient solution because it constitutes the largest renewable energy source. So far, the only practical way to store such large amounts of energy has been to use a chemical energy carrier likewise a fuel. In various solar energy to power conversion systems, the photoelectrochemical (PEC) splitting of water into hydrogen and oxygen by the direct use of solar energy is an ideal process. It is a renewable method of hydrogen production integrated with solar energy absorption and water electrolysis using a single photoelectrode. Previous studies on photoelectrode films for PEC water splitting cells have been mainly focused on synthesizing oxide semiconductors with wide band gaps, such as TiO2(3.2eV), WO3(2.8eV), and Fe2O3(2.3eV). Unfortunately, these pristine oxide photoanodes without any catalysts have relatively low photocurrent densities because of the inherent limitation of insufficient visible light absorption due to the wide bandgap. Specifically, there is a tradeoff between high photocurrent and photoelectrochemical corrosion behavior, which is representative of figures of meritf or PEC materials.