• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• 한국세라믹학회지
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• 제40권3호
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.262-264
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• 2009

Ternary oxides with controlled band gap energy and reduced reactivity against moisture and carbon dioxide gas were designed and studied as a potential material for protective layer of ac-PDPs. The results showed a significant reduction in firing voltage and improved environmental stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.46-46
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• 2009

The photoconductive $AgGaSe_2$(AGS) layers were grown by the hot wall epitaxy method. The AGS layer was confirmed to be the epitaxially grown layer along the <112> direction onto the GaAs(100) substrate. The band-gap variation as a function of temperature on AGS was well fitted by $E_8(T)=1.9501-8.37{\times}10^{-4}T^2/(T+224)$. The band-gap energy of AGS obtained at 293 K was determined to be 1.8111 eV.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• Current Photovoltaic Research
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• 제5권2호
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• pp.43-46
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• 2017

Large absorption band shift has been observed for the azo-dye (disperse red-13, DR-13) attached on the surface of silica spheres. Urethane linkage has been utilized to form covalent bond between azo-dye (-OH) and 3-isocyanatopropyltriethoxysilane (ICPTES, -N=C=O). The synthesized ICPTES-DR-13 (ICPDR) molecules were attached to the silica spheres by the hydrolysis and condensation reaction. Although the absorption peak of DR-13 in methanol is at 510 nm, the absorption peak of the ICPDR-silica spheres shifts to 788 nm. The large absorption peak shift is due to the formation of intramolecular charge-transfer band with large aggregated ICPDR.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.191-191
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• 2011

최근 투명전극 연구는 태양전지 및 디스플레이, LED 등 많은 분야에서 응용되며 또한 기술 개발이 활발하다. 그 중 전기 전도도가 우수하면서 밴드갭이 2.5 eV 이상으로 가시광 영역에서 투명하기 때문에 디스플레이의 투명전극으로 ITO (Indium Tin Oxide)가 많이 사용되고 있다. 본 실험에서는 RF magnetron sputtering법을 이용한 ITO의 증착시 산소 유량을 달리하여 제작한 박막의 Energy Band Structure를 ${\gamma}$-FIB system을 이용하여 측정하였다. ITO에 이온화 에너지가 24.5 eV인 He Ion source를 주사하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 ITO 내의 Energy Band Structure를 실험적으로 측정하였다.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2002년도 가을 학술발표회 논문집
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• pp.623-628
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• 2002

A meshfree formulation for the calculation of energy band structure is presented. The conventional meshfree shape function is modified to handle the periodicity of Bravais lattice, and applied to the calculation of real-space electronic-band structure. Numerical examples include the Kronig-Penney model potential and the empirical pseudopotentials of diamond and zinc-blonde semiconductors. Results demonstrate that the meshfree method be a promising one as a real-space technique for the calculations of diverse physical band structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.

• Journal of Advanced Marine Engineering and Technology
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• 제37권6호
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• pp.596-602
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• 2013

기존의 진동에너지 하베스터는 한 주파수에서의 공진현상을 이용하여 에너지를 얻기 때문에 고정된 단일 주파수를 갖는 진동에너지로부터 전기에너지를 변환하는데 최적이지만 다양한 주파수를 포함하고 있는 파도와 같은 상하진동 에너지원으로부터 전기에너지를 얻는 데에는 한계가 있다. 본 논문에서는 이러한 단점을 해결하기위해 파도가 갖는 무한한 상하진동 에너지로부터 전기에너지를 얻는 광대역 진동에너지 하베스터를 연구하였다. 광대역 진동에너지 하베스터는 부양체와 진동에너지 하베스터가 각각 파도에너지가 갖는 중심주파수에서 공진이 발생되도록 구성되어있다. 그 결과 기존 공진을 이용한 진동에너지 하베스터는 한 주파수에서만 진동에너지를 전기에너지로 변환할 때 효율을 극대화할 수 있는 반면, 제안한 방법은 다양한 주파수를 포함하고 있는 파도에너지로부터 전기에너지로 변환할 때도 효율을 극대화 할 수 있는 장점을 가진다.