• Title/Summary/Keyword: ellipsometry

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Determination of the Optical Functions of Various Liquids by Rotating Compensator Multichannel Spectroscopic Ellipsometry

  • Bang, Kyung-Yoon;Lee, Seung-Hyun;Oh, Hye-Keun;An, Il-Sin;Lee, Hai-Won
    • Bulletin of the Korean Chemical Society
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    • v.26 no.6
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    • pp.947-951
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    • 2005
  • Rotating compensator multichannel spectroscopic ellipsometry has been employed to determine the optical functions of various liquids used in chemistry. We attempted three different measurement configurations: (1) air-liquid interface, (2) prism-liquid interface, and (3) liquid-sample interface. In prism-liquid interface, we found that the prism surface had roughness and it should be considered in analysis for accurate results. In liquidsample interface, we had much higher reflection, better sensitivity, and less limitation compared to the other two configurations when crystalline silicon was used as reference sample. We discuss the merit of each configuration and present the optical functions of various liquids. Also we demonstrate Bruggeman effective medium theory to determine the optical properties of mixed liquid.

Surface Morphology of AlSb on GaAs Grown by Molecular Beam Epitaxy and Real-time Growth Monitoring by in situ Ellipsometry

  • Kim, Jun Young;Lim, Ju Young;Kim, Young Dong;Song, Jin Dong
    • Applied Science and Convergence Technology
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    • v.26 no.6
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    • pp.214-217
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    • 2017
  • AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is $530^{\circ}C$. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.

Optimum Growth Condition of Phase Change GeSbTe Thin Films as an Optical Recording Medium using in situ Ellipsometry (In situ 타원법을 사용한 광기록매체용 GeSbTe 박막의 최적성장조건 연구)

  • 이학철;김상열
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.02a
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    • pp.78-79
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    • 2003
  • 타원법(ellipsometry)을 사용하여 광기록 매체용 Ge$_2$Sb$_2$Te/sub 5/(GST) 박막의 성장과정에 따른 타원상수 Ψ와 $\Delta$를 측정하여, GST 박막의 최적성장조건을 연구하였다. 아르곤기체압력과 DC 출력 그리고 기판의 온도를 변화시키면서 GST 박막을 성장시켰다. 제작된 시료들의 분광타원 데이터를 모델링분석하여 GST 박막의 밀도분포를 구하고 한편으로는 GST 박막이 성장하는 동안 측정한 in situ 타원 성장곡선을 분석하여 박막의 밀도분포의 변화를 추적하였다. (중략)

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Sensitivity and Error Propagation Factors for Three-Parameter Ellipsometry

  • Ihm, Hye-Ran;Chung, Gyu-Sung;Paik, Woon-Kie;Lee, Duck-Hwan
    • Bulletin of the Korean Chemical Society
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    • v.15 no.11
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    • pp.976-980
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    • 1994
  • The sensitivity factors and the error propagation factors are defined for the three-parameter ellipsometry (TPE). The sensitivity factor is useful for understanding the nature of the TPE measurements in connection with determination of the optical properties and the thickness of a film. On the other hand, the error propagation factors provide a quantitative tool for predicting the optimum condition for TPE experiments. Their usefulness is demonstrated for the passive film formed on nickel in aqueous solution.

A Novel Analysis Of Amorphous/Crystalline Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometer (Spectroscopic Ellipsometer를 이용한 a-Si:H/c-Si 이종접합 태양전지 박막 분석)

  • Ji, Kwang-Sun;Eo, Young-Ju;Kim, Bum-Sung;Lee, Heon-Min;Lee, Don-Hee
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.378-381
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    • 2008
  • 고효율 a-Si:H/c-Si 이종접합 태양전지를 얻기 위해서는 우수한 c-Si wafer 위에 고품질의 비정질 실리콘박막을 통한 heterointerface를 형성하는 것이 매우 중요하다. 이를 달성하기 위해서는 공정중에 오염되기 쉬운 Si wafer 표면 상태를 정확히 검사하고 잘 관리하여야 한다. 본 연구에서는 세정 및 표면산화에 따른 Si wafer 상태를 Spectroscopic Ellipsometry 및 u-PCD를 이용하여 분석하였으며, <$\varepsilon$2> @4.25eV 값이 Si wafer 상태를 잘 나타내고 있음을 확인하였고 세정 최적화 할 경우 그 값이 43.02에 도달하였다. 또한 RF-PECVD로 증착된a-Si:H 박막을 EMA 모델링을 통해 분석한 결과 낮은 결정성과 높은 밀도를 가지는 a-Si:H를 얻을 수 있었으며, 이를 이종접합 태양전지에 적용한 결과 Flat wafer상에서 10.88%, textured wafer 적용하여 13.23%의 변환효율을 얻었다. 결론적으로 Spectroscopic Ellipsometry가 매우 얇고 고품질의 다층 박막이 필요한 이종접합 태양전지 분석에 있어 매우 유용한 방법임이 확인되었다.

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Dielectric Function Analysis of Cubic CdSe Using Parametric Semiconductor Model (변수화 반도체 모델을 이용한 Cubic Zinc-blonde CdSe의 유전함수 분석)

  • Jung, Y.W.;Ghong, T.H.;Lee, S.Y.;Kim, Y.D.
    • Journal of the Korean Vacuum Society
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    • v.16 no.1
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    • pp.40-45
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    • 2007
  • ZnCdSe alloy semiconductor was widely used for the optoelectronic device. And CdSe is the end-point in this material. In this work, we measured the dielectric function spectrum of cubic CdSe with Vacuum Ultra Violet spectroscopic ellipsometry and analysed this data with parametric model. As a result, we observed some of transition energy point over 6 eV and obtained the database for dielectric function spectrum, which could be used for temperature or alloy composition dependence study on optical property of CdSe.

Immunosensor for Detection of Escherichia coli O157:H7 Using Imaging Ellipsometry

  • Bae Young-Min;Park Kwang-Won;Oh Byung-Keun;Choi Jeong-Woo
    • Journal of Microbiology and Biotechnology
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    • v.16 no.8
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    • pp.1169-1173
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    • 2006
  • Imaging ellipsometry (IE) for detection of binding of Escherichia coli O157:H7 (E. coli O157:H7) to an immunosensor is reported. A protein G layer, chemically bound to a self-assembled layer of 11-mercaptoundecanoic acid (11-MUA), was adopted for immobilization of monoclonal antibody against E. coli O157:H7 (Mab). The immobilization of antibody was investigated using surface plasmon resonance. To fabricate antibody spots on a gold surface, protein G solution was spotted onto the gold surface modified with an 11-MUA layer, followed by immobilizing Mab on the protein G spot. Ellipsometric images of the protein G spot, the Mab spot, and Mab spots with binding of E. coli O157:H7 in various concentrations were acquired using the IE system. The change of mean optical intensity of the Mab spots in the ellipsometric images indicated that the lowest detection limit was $10^3$CFU/ml for E. coli O157:H7. Thus, IE can be applied to an immunosensor for detection of E. coli O157:H7 as a detection method with the advantages of allowing label-free detection, high sensitivity, and operational simplicity.

Analysis of patterned ITO layer of PDP thin films using spectroscopic ellipsometry (분광타원법을 이용한 PDP용 ITO 박막의 패턴 분석)

  • 윤희삼;김상열
    • Korean Journal of Optics and Photonics
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    • v.14 no.3
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    • pp.272-278
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    • 2003
  • We studied patterned ITO layers of PDP thin films on glass substrates using spectroscopic ellipsometry. The optical property of ITO is expressed with the optical model based on two Lorentz oscillators. The effect of patterned ITO is calculated by taking the weighted average of reflectance in proportion to ITO coverage. The relative coverage of ITO is determined by using the model analysis of spectroellipsometric data. The difference of ITO coverage obtained by the best-fit model analysis of ellipsometric spectra to the expected one is critically examined and suggestions are made to minimize the observed discrepancy.

Analysis of Surface and Thin Films Using Spectroscopic Ellipsometry (Spectroscopic Ellipsometry를 이용한 표면 및 박막의 분석)

  • 김상열
    • Korean Journal of Optics and Photonics
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    • v.1 no.1
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    • pp.73-86
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    • 1990
  • The technique of Spectroscopic Ellipsometry (SE) has been examined with emphasis on its inherent sensitivity to the existence of thin films or surface equivalents. A brief review of related theories like the Fresnel reflection coefficients, the effect of a multilayer upon reflectivities, together with the validity of the effective medium theory and the modelling procedure, is followed by a short description of the experimental setup of a rotating polarizer type SE as well as the necessful expressions which lead to tan and cos. Out of its numerous, successful applications, a few are exampled to convince a reader that SE can be applied to a variety of research fields related to surface, interface and thin films. Specifically, those are adsorption and/or desorption on metals or semiconductors, oxidation process, formation of passivation layers on an electrode, thickness determination, interface between semiconductor and its oxide, semiconductor heterojunctions, surface microroughness, void distribution of dielectric, optical thin films, depth profile of multilayered samples, in-situ or in-vitro characterization of a solid surface immersed in electrolyte during electrochemical, chemical, or biological treatments, and so on. It is expected that the potential capability of SE will be widely utilized in a very near future, taking advantage of its sensitivity to thin films or surface equivalents, and its nondestructive, nonperturbing characteristics.

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