• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.686-689
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• 2014

Electrostatic discharge has been considered as a major reliability problem in the semiconductor industry. ESD reliability is an important issue for these products. Therefore, each I/O (Input/Output) PAD must be designed with a protection circuitry that creates a low impedance discharge path for ESD current. This paper presents a novel Lateral Insulated Gate Bipolar (LIGBT)-based ESD protection circuit with latch-up immunity and high robustness. The proposed circuit is fabricated by using 0.18 um BCD (bipolar-CMOS-DMOS) process. Also, TLP (transmission line pulse) I-V characteristic of proposed circuit is measured. In the result, the proposed ESD protection circuit has latch-up immunity and high robustness. These characteristics permit the proposed circuit to apply to power clamp circuit. Consequently, the proposed LIGBT-based ESD protection circuit with a latch-up immune characteristic can be applied to analog integrated circuits.

• Bulletin of the Korean Mathematical Society
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• v.49 no.4
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• pp.705-714
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• 2012

In this paper, we study nonlinear equation arising in MEMS modeling electrostatic actuation. We will prove the local and global existence of solutions of the generalized parabolic MEMS equation. We present that there exists a constant ${\lambda}^*$ such that the associated stationary problem has a solution for any ${\lambda}$ < ${\lambda}^*$ and no solution for any ${\lambda}$ > ${\lambda}^*$. We show that when ${\lambda}$ < ${\lambda}^*$ the global solution converges to its unique maximal steady-state as $t{\rightarrow}{\infty}$. We also obtain the condition for the existence of a touchdown time $T{\leq}{\infty}$ for the dynamical solution. Furthermore, there exists $p_0$ > 1, as a function of $p$, the pull-in voltage ${\lambda}^*(p)$ is strictly decreasing with respect to 1 < $p$ < $p_0$, and increasing with respect to $p$ > $p_0$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.58-62
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• 2004

The shape evolution of the interface void of copper metallization for intergrated circuits under electromigration stress is modeled. A 2-dimensional finite-difference numerical method is employed for computing time evolution of the void shape driven by surface diffusion, and the electrostatic problem is solved by boundary element method. When the diffusion coefficient is isotropic, the numerical results agree well with the known case of wedge-shape void evolution. The numerical results for the anisotropic diffusion coefficient show that the initially circular void evolves to become a fatal slitlike shape when the electron wind force is large, while the shape becomes non-fatal and circular as the electron wind force decreases. The results indicate that the open circuit failure caused by slit-like void shape is far less probable to be observed for copper metallization under a normal electromigration stress condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.81-86
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• 2006

We have studied electrode-optic characteristics of in-plane switching (IPS) of liquid crystal director driven by an oblique electric field. Because the conventional IPS mode does not have an electrode on top substrate, it shows not only slow response time due to weak electric field but also slow discharging problem when electrostatic field is generated after fabricating the cell. To solve these problems, we have formed additional electrode including dielectric layer in the inner part of the cell on top substrate and studied electrode-optic characteristics of the new device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.279-280
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• 2005

We have designed a single gap transflective liquid crystal display (LCD) driven by a fringe electric field and vertical field. The conventional FFS mode does not have an electrode on top substrate, it shows not only slow response time due to weak electric field but also slow discharging problem when electrostatic field is generated after fabricating the cell. To solve these problems, transflective LCD with ITO coated upper substrate was suggested but the transmittance was reduced significantly due to effects from vertical field. Hence, in the present paper, new transflective LCD with ITO coating only in the reflective region was characterized.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.393-399
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• 2018

An electrostatic boundary-value problem of a dielectric-wedge-backed, double-slotted conducting wedge is investigated to analyze an asymmetric coplanar waveguide with an infinite dielectric thickness using the Mellin transform and a mode-matching method. Our theoretical solution based on eigenfunction expansion and residue calculus is a rigorous and fast-convergent series form. Numerical computations are conducted to evaluate the potential field, capacitance, and characteristic impedance for various structures of the asymmetric coplanar waveguide. The computed results show good agreement with the simulated results.

• Journal of the Korean Society of Safety
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• v.13 no.3
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• pp.80-87
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• 1998

This paper presents a study on the development of discharge model and computer program for assessing the risk of electrostatic discharge(ESD) of charged human body This ESD event is modelled as a two-body problem using spherical conductors, simulating the approach of a charged conductor (human body) to a second conductor (electronic equipment). The charge/discharge process for the model is formulated as a matrix of equations by Maxwell's method. Body potentials, energies and the charge transfer during a discharge are calculated. The developed program, based on the suggested scheme in this paper, is applied to a sample system. The results provide a better understanding of ESD event and demonstrate the usefulness of two-body model in practical applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.104-108
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• 2005

We have studied electrode-optic characteristics of IPS (in-plane switching) mode with electrode on top substrate. Because the IPS mode does not have electrode on top substrate. it shows not only slow response time due to weak electric field but also slow discharging problem when electrostatic field is generated after fabricating the cell. To solve these problems. we have formed additional electrode including dielectric layer in the inner part of the cell and studied electrode-optic characteristics of new IPS cell by changing thickness of dielectric layer.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.35-40
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• 2008

High performance light emitting diodes(LEDs) have been developed using GaN-based materials grown on sapphire substrates in recent years. Although these LEDs are already commercially available, we have to consider electrostatic discharge(ESD) damage related to both basic materials of diode and miniaturization of LEDs. ESD damage is one of the important parameters influencing reliability of the light emitting devices. We investigated mass production of GaN-based LEDs suffered from ESD during production process and present the solutions in order to improve the ESD problem. Most of EDS problems were controlled by using instruments properly and improvement of the process circumstances as well.