• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1372-1373
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current- voltage characteristics.

• Current Industrial and Technological Trends in Aerospace
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• v.7 no.1
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• pp.68-78
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• 2009

In this paper, the electrostatic charging and discharging mechanism, and its effects in space plasma environment are reviewed and the system design control documents, ESD analysis tools and modelling techniques, and the SPIS program in Europe are introduced. A design of the satellite system against the electrostatic discharge (ESD) effects in space plasma environments is carefully taken into account at the early stage of development. In a view of the space system design, it really depended on the mission of system, electrical and mechanical configuration, system operation, and orbit condition. Behavior of the electrons and the ions in those environments may be occurred the sever problem to the satellite operation. So it is carefully understood for implementation of the satellite system. By this reason, the space environments and its effects have been comprehensively studied in U.S.A and Europe.

• Journal of Satellite, Information and Communications
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• v.9 no.3
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• pp.15-21
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• 2014

An electrostatic discharge (ESD) protection device, so called, N-type embedded silicon controlled rectifier (NESCR), was analyzed for high voltage operating I/O applications. A conventional NESCR standard device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, our modified NESCR_CPS_PPW device with proper junction/channel engineering such as counter pocket source (CPS) and partial P-well structure demonstrates highly latch-up immune current-voltage characteristics with high snapback holding voltage and on-resistance.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.1-5
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW_PGM(primary gate middle) and optimal CPS(counter pocket source) implant demonstrate the stable ESD protection performance with high latch-up immunity.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.

• Journal of Radiation Protection and Research
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• v.17 no.1
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• pp.31-41
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• 1992

A study for the evaluation of selected filter media that need further characterization particularily in the context of alpha measurements of radon progeny has been carried out by investigating physical characteristics and using the alpha spectroscopy. Physical characteristics was investigated by electrostatic charging and mechanical strength of filters, and then pressure drop before and after sampling was tested. Alpha spectroscopy was used to analyze the energy spectra from the deposition of radon progeny into filters. The results of the assessment showed that the newer filter types do not have a great advantage over the 'old standard' Millipore type AA. But Metricel DM-800 is recommended for those situations where electrostatic charging is a problem. Also this method will be used more effective for the evaluation of new developing filters in future.

• Journal of Satellite, Information and Communications
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• v.9 no.4
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• pp.63-68
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• 2014

Electrostatic Discharge(ESD) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW demonstrate the stable ESD protection performance with high latch-up immunity.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.7
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• pp.63-70
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• 2019

An electro-aerodynamic lens for improving the performance of virtual impactor has been proposed in this study. ANSYS FLUENT Release 16.1 was used for numerical analysis of virtual impactor with and without the electro-aerodynamic lens, used to collimate the incoming aerosol particles into a particle beam before injecting the particles into the virtual impactor. Particles supplied to the electro-aerodynamic lens were assumed to be highly charged. By using an aerodynamic lens before the virtual impactor, without any electrostatic effect, it was found that the cut-off diameter of the virtual impactor was reduced from $4.2{\mu}m$ to $0.68{\mu}m$ and that the fine particle contamination problem became more serious. However, by employing the combined electrostatic and aerodynamic effects, that is, by applying electric voltage potential to the electro-aerodynamic lens, the cut-off diameter was found to be further reduced to $0.45{\mu}m$ and the fine particle contamination was eliminated.

• Journal of Practical Engineering Education
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• v.15 no.1
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• pp.209-221
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• 2023

In the external inspection and packaging stages of products used in the semiconductor manufacturing process, there is a problem in which particles are adsorbed to the product itself or a carrying tool due to electrostatic discharge. This study presents a methodology that can improve the problem of adsorption of particles to a product by using a practical TRIZ technique. By applying the proposed practical TRIZ-based methodology, the problem was defined, and contradictions caused by product waiting time were derived. Among the derived contradictions, physical contradictions were set and the concept of 'space separation' was applied to derive solutions such as 'installation of Ionizer' and 'improvement of the layout of the workroom'. As a result of the experiment by applying 'Ionizer Installation' and 'Workroom Layout Improvement' derived through the application of practical TRIZ, it was confirmed that the particle adsorption problem that occurs during the waiting time of the product can be solved.Through this study, it is expected that workers, facility engineers, and technical engineers working at manufacturing processes will be able to effectively solve the problems they face through creative thinking and change of ideas by using practical TRIZ techniques, and contribute to innovative technology development and productivity improvement.

• Journal of Gifted/Talented Education
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• v.12 no.4
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• pp.108-119
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• 2002

We have analyzed students' reports on a problem for 'adhesive tape' among ten assigned problems in the first Korean youth physics tournament (KYPT). There were five team' s reports on this problem. Students reported that the reasons for lightening coming out from the stripping down adhesive tape are caused by electrostatic friction, electron transfer, energy transformation, etc. However, only few teams suggest new creative ideas with divergent thinking during their inquiry process. Because the KYPT is a debate based on the problem solving by inquiries, the reports should include the creative investigations by their own ideas in every steps of inquiry up to their final conclusions.