• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.9
• /
• pp.672-675
• /
• 1999

Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.9
• /
• pp.656-661
• /
• 1999

As a fundamental study for FED tubeless packaging, sodalime-sodalime electrostatic bonding was performed by using on the developed bonding mechanism. Thebonding properties of the bonded sodalime-sodalime structure were investigated through SEM and SIMS analyses. Mo-tip FEA was vacuum-packaged by the developed bonding process and the packaged device generated the field emission current.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.11
• /
• pp.635-639
• /
• 2000

In this paper, a new idea about ultra-clean aligning and mounting method of FED spacers was introduced. The glass-to -glass electrostatic bonding process was employed in order to bond the micro-structures of spacers to black matrix area formed on an FED anode substrate. It is possible to get adhesive-free bonding interface and well-aligned spacer array on an FED anode substrate with a ${\pm}5{\mu}m$ accuracy. Finally, I inch-sized FED panel was demonstrated to make sure of its applicability to FED panel fabrication.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.4
• /
• pp.6-13
• /
• 2022

The electrostatic phenomenon seriously issued in extreme ultraviolet semiconductor cleaning was studied in junction with molecular dynamic aspect. It was understood that two lone pairs of electrons in water molecule were subtly different each other in molecular orbital symmetry, existed as two states of large energy difference, and became basis for water clustering through hydron bonds. It was deduced that when hydrogen bond formed by lone pair of higher energy state was broken, two types of [H₂O]⁺ and [H₂O]^- ions would be instantaneously generated, or that lone pair of higher energy state experiencing reactions such as friction with Teflon surface could cause electrostatic generation. It was specifically observed that, in case of electrolyzed cathode water, negative electrostatic charges by electrons were overlapped with negative oxidation reduction potentials without mutual reaction. Therefore, it seemed that negative electrostatic development could be minimized in cathode water by mutual repulsion of electrons and [OH]^- ions, which would be providing excellences on extreme ultraviolet cleaning and electrostatic control as well.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.4
• /
• pp.275-280
• /
• 1999

The glass-to-glass electrostatic bonding process in vacuum environment was developed and the tubeless-packaged FED was fabricated based on the bonding process. The fabricated tubeless-packaged FED showed stable field emission characteristics and potential applicability to the FED tubeless packaging and vacuum in-line sealing.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.1004-1006
• /
• 1998

Mo-tip FED of 1 inch diagonal was vacuum sealed using sodalime-to-sodalime glass electrostatic bonding under $10^{-7}torr$. The bonding properties of the bonded sodalime-to sodalime structure were investigated and emission characteristic of packaged FED panel was measured.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.1
• /
• pp.37-40
• /
• 2001

New package process for PDP was proposed based on the glass-to-glass vacuum-electrostatic bonding process and tubeless packaging concept derived from the previous study. Hermeticity and operating performance of PDP test panel through the seal-off process application and the possibility for practical use might be high if the process simplicity and productivity-related effort was sequentially carried out.

• Journal of the Korean Ceramic Society
• /
• v.20 no.1
• /
• pp.70-78
• /
• 1983

This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.

• Journal of Sensor Science and Technology
• /
• v.7 no.3
• /
• pp.211-217
• /
• 1998

Si and ITO-coated #7059 glass wafers were electrostatically bonded by employing #7740 interlayer. It was inferred that the thermionic- electrostatic migration of $Na^{+}$ ions in the #7740 interlayer played an important role in the bonding process through SIMS analysis. The temperature and voltage required for reliable electrostatic bonding were in the range of $180{\sim}200^{\circ}C$ and $50{\sim}70V_{dc}$(10min), respectively. The low temperature Si-ITO coated glass bonding can be effectively applied to the packaging of field emission devices.

• Korean Journal of Materials Research
• /
• v.6 no.1
• /
• pp.3-11
• /
• 1996

대면적 정전 접합 장치를 고안 및 제작하여 Si과 glass를 정전 접합시켰다. 여러 온도에서 정전 접합 후 접합 면적을 측정하였으며 접합이 이루어진 경우 그 접합 면적이 90%를 넘었다. 접합시 전류를 측정하여 접합 강도와의 관계를 살펴보였다. 잔류 공공을 생성시키는 원인은 재료의 표면 거칠기 차이나 전극의 모양보다는 불순물 입자에 의한 것임이 밝혀졌고 같은 크기의 불순물 입자에 대한 공공의 크기는 접합 온도가 높을수록 감소하였다. 정전 접합에 미치는 불순물의 영향을 공공의 크기 및 불순물 입자의 크기를 측정하여 살펴보았다.