• 제목/요약/키워드: electronic current

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Si-strained layer를 가지는 Silicon-Germanium on Insulator MOSFET에서의 이동도 개선 효과 (Improvement of carrier mobility on Silicon-Germanium on Insulator MOSFEI devices with a Si-strained layer)

  • 조원주;구현모;이우현;구상모;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.7-8
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    • 2006
  • The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

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일본의 무역금융EDI에 있어 국제해상보험증권의 전자화 현황과 향후과제 (The current situations and future directions of electronic marine insurance policy in Japan's trade financial EDI)

  • 한상현
    • 통상정보연구
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    • 제9권1호
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    • pp.169-186
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    • 2007
  • The purpose of this study analyzes laying stress on Japan example that background of electronic issue of international meritime insurance policy is what, and is marched in some degree present. and this study presented what hereafter subject of electronic insurance plice is. The this paper is to study the current situations of trade financial EDI in Japan and problems in application of marine insurance contracts. The subject of electronic marine policy issue is as following in trade financing EDI. (1) application of electronic document in claim demand. (2) standardization of various documents and insurance plice data. (3) insurance compensation document that become Jeonjahwa in insurance accident settlement. (4) maritime Insurance policy agreement's establishment. (5) when is monopolized to third party, realization of electronic maritime insurance policy offer.

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Improvement of Carrier Mobility on Silicon-Germanium on Insulator MOSFET Devices with a Strained-Si Layer

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • 한국전기전자재료학회논문지
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    • 제20권5호
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    • pp.399-402
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    • 2007
  • The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

적층형 고온초전도 전류도입선의 열 특성 해석 (Heat Characteristic Analysis of Stacking Type HTS Current Lead)

  • 두호익;임성우;홍세은;윤기웅;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.628-631
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    • 2001
  • Current lead is one of the first proposed devices for the application of High Temperature-Superconductor(HTSC). The current lead provides high current for electrical machine using superconductor from room temperature. Its characteristics that is zero resistance and low heat transfer rate under critical temperature lead to research for the replacement of existing current lead with HTSC. In this paper, we investigated the temperature distributions of stacking type and rod type current lead with each cross-section area and length using Nastran program and compared each temperature distribution. It is obtained from this paper that stacking type current lead has flat temperature gradient and than rod type one and more stable operation as current lead is closely related with its cross-section area and length.

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고온초전도체를 이용한 전류제한장치의 개발 (Development of superconducting current limiting device used high-$T_{c}$ superconductor)

  • 최명호;강형곤;유현수;박성진;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 추계학술대회 논문집
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    • pp.35-38
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    • 1993
  • SCLD(supercondocting current 1imiting device) with YBaCuO superconductor was fabricated by the sol-gel and the doctor-blade method. Critical current density ($J_{c}$) and critical current ($I_{c}$) of the SCLD are 100.27 A/$cm^2$and 1A at 77K and the electrodes contact with SCLD by silver paste. The SCL was connected with test circuit in series. When apple iud current exceed critical current value of the SCLD in testing circuit, the SCLD ristricts the over current by generating resistance itself without delay. Resistance of SCLD increase lineary 0 to 1.6$\Omega$ in propotion to applied current above the critical current $I_{c}$.

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자성체포화를 이용한 DC전류센서 (DC Current sensor using the saturable magnetic cores)

  • 박영태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.699-702
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    • 2002
  • A DC current sensor is disclosed in which two pairs of saturable cores are provided so as enclose a conductor carrying a direct current to be measured. On each of the saturable cores, a bias winding, a feedback winding and an output winding are wound. Circuit for detection of an asymmetry in the magnetization current, generated by a reference alternating voltage, in a signal-conditioner. The reference alternating voltage is fed to the respective series circuits such that no resultant induction current is induced in the modulating current. The voltages over the resistor form input signals for two peak value detectors, the strength of the output signal of which represents the degree of asymmetry of magnetization current. This paper describes the development a DC current sensor and its signal-conditioner.

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새로운 CMOS 전압-전류 안정화 회로 설계 (The New Design of CMOS Voltage-Current Reference Circuit for Stable Voltage-Current Applications)

  • 김영민;황종선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1239-1243
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    • 2004
  • A novel voltage-current reference circuit for stable voltage-current applications is Proposed. Circuits for a positive and for a negative voltage-current reference are presented and are designed with commercial CMOS technology. The voltage-current reference that is stable over ambient temperature variations is an important component of most data acquisition systems. These results are verified by the HSPICE simulation $0.8{\mu}m$ parameter. As the result, the temperature dependency of output voltage and output current each is $0.57mV/^{\circ}C$, $0.11{\mu}A/^{\circ}C$ and the power dissipation is 1.8 mV on 5V supply voltage.

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삼상전력계통의 비대칭고장전류 저감을 위한 초전도한류기의 전류제한특성 (Current Limiting Characteristics of Superconducting Fault Current Limiter for Reduction of Unsymmetrical Fault Current in a Three-Phase Power System)

  • 김영민;임성훈;황종선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.8-8
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    • 2010
  • In this paper, the limiting characteristics of the fault current in a power system with a superconducting fault current limiter(SFCL) applied into neutral line of main transformer in a distribution power line were analyzed. The SFCL applied into the neutral line of main transformer power system can limit the unsymmetrical fault current from the single-line ground fault or the double-line ground fault. In addition, it could be decreased a number of SFCL and a load. This method could be expected to reduction of a power loss in the neutral line, because of a neutral line current is zero in ordinary times.

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BSCCO 고온초전도 전류도입선의 제조 (Fabrication of BSCCO high-Tc superconducting current lead)

  • 하동우;오상수;류강식;장현만
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.252-255
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    • 1996
  • Superconducting current lead is one of the promising applications of the oxide high-Tc superconductors, because they have the advantage of decreasing heat conduction to low temperature region, comparing with a conventional cooper alloy lead. High critical current density is a key factor for the applications such as current lead. (Bi,Pb)$_2$Sr$_2$Ca$_2$Cu$_3$O$\_$x/ high Tc superconductor haute been investigated in terms of critical current density. Bi-2223 superconducting current lead made by CIP and solid state sintering process. Bi-2223 current lead that heat treated at 836$^{\circ}C$ for 240 h in 1/13 P$\_$O$_2$/ had over 150 A/$\textrm{cm}^2$ of critical current density at 77K. We knew that the superconducting properties of tube type current leads were better than rods type of them. And we investigated the relation of Bi-2223 formation and heat treatment condition by XRD and SEM analysis.

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자기인지 신경회로망에서 아날로그 기억소자의 선형 시냅스 트랜지스터에 관한연구 (A Study on the Linearity Synapse Transistor of Analog Memory Devices in Self Learning Neural Network Integrated Circuits)

  • 강창수
    • E2M - 전기 전자와 첨단 소재
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    • 제10권8호
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    • pp.783-793
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    • 1997
  • A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

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