• 제목/요약/키워드: electroless plating

검색결과 438건 처리시간 0.028초

Characteristics of Micro-hardness and Corrosion of Electroless Nickel-Phosphorus Plating depending on Heat Treatment

  • Jung Seung-Jun;Park Soo-Gil
    • 전기화학회지
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    • 제3권4호
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    • pp.196-199
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    • 2000
  • 무전해 도금은 내식성, 내구성, 전도성 특별히 비전도성 물질의 도금이 요구되는 모든 재료에 폭 넓게 사용되는 우수한 표면 처리 방법이다. 무전해 니켈 도금은 비자성, 무정형 구조,내구성, 내식성 그리고 열정 안정성 등의 많은 장점을 갖는다. 본 연구에서는 무전해 니켈 도금의 열처리에 따른 무전해 니켈-인 도금의 경도와 내식성의 변화를 연구하였다. 가장 높은 경도 값은 $500^{\circ}C$열처리에서 얻어졌다. $300^{\circ}C$에서 열처리한 도금의 내식성이 60시간 동안 1몰의 황산 수용액에서 테스트 한 결과 가장 우수하였다.

인쇄회로기판상의 금속 배선을 위한 구리 도금막 형성 : 무전해 중성공정 (Electroless Plated Copper Thin Film for Metallization on Printed Circuit Board : Neutral Process)

  • 조양래;이연승;나사균
    • 한국재료학회지
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    • 제23권11호
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    • pp.661-665
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    • 2013
  • We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

무전해 도금법에 의한 전자파 차단 의류소재의 제조 (Preparation of Electromagnetic Wave Shielding Fabrics by Electroless Plating)

  • 김수미;송화순
    • 한국의류학회지
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    • 제29권1호
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    • pp.149-156
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    • 2005
  • The purpose of this study was to produce the high quality of electromagnetic wave shielding fabrics. In this study, we have produced polyester fabrics by electroless Ag plating. The untreated polyester was etched with $4\%$ NaOH solution added accelerant(Benzyl Dimethyl Dodecyl Ammonium Chloride) then it was catalyzed by $SnCl_2$ solution and activated by $PdCl_2$ solution. Electroless Ag plating was carried out by changing conditions such as temperature. time, weight loss rate of polyester and kind of reducing agents. The electromagnetic wave shielding effectiveness of polyester fabric by electroless Ag plating was measured by RF Impedance Analyzer and element of electromagnetic wave shielding substance was measured using Electron probe micro analyzer. The results were as follows; The plating bath using potassium sodium tartrate by reducing agent was excellent electromagnetic wave shielding effectiveness. Element of electromagnetic wave shielding substance was silver. Electromagnetic wave shielding effectiveness was shown over 64dB at the temperature of $40^{\circ}C$, treating time 30min., weight loss rate $20\%$.

탄소나노섬유 표면 구리 무전해 도금에 미치는 분산제와 도금 전처리의 영향 (Effects of Surfactant and Preplate Process on Electroless Copper Plating on Carbon Nano-fiber)

  • 한준현;석현광;이상수;지광구
    • 한국분말재료학회지
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    • 제16권2호
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    • pp.131-137
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    • 2009
  • This paper deals with the effects of the surfactant and preplate process (sensitization and activation) on electroless copper plating on carbon nano-fiber (CNF). Ultrasonic irradiation was applied both during dispersion of CNF and during electroless plating containing preplate process. The dispersion of CNF and flatness of the plated copper film were discussed based on the changes in surfactant concentration and preplate process time. It was clearly shown that high concentration of surfactant and long time of preplate process could promote the agglomeration of CNF and uneven copper plating on CNF.

PREPARATION OF ANISOTROPIC CONDUCTIVE FINE PARTICLES BY ELECTROLESS NICKEL PLATING.

  • Fujinami, T.;Watanabe, J.;Motizuki, I.;Honma, H.
    • 한국표면공학회지
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    • 제29권6호
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    • pp.709-713
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    • 1996
  • Mechanical solderless chip packaging with small gold bumps or metal balls has increased in the electronic devices. The preparation of conductive particles (5~7 $\mu\textrm{m}$ diamiter) by electroless nickel plating have been investigated. Generally, batch type electroless plating is applied to provide conductivity on the nonconductors. Since the surface areas of particles are much larger than the bulk substrate, accordingly the electroless plating bath becomes unstable. Thus, we applied the continuous dropping method for the preparation of conductive particles. The uniform coverage of deposited nickel on the particles was obtained by using ammonium acetate as a complexing agent, and surface coverage is further improved without coagulation of particles by the surface active agent treatment before enter the plating bath.

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ENIG 표면처리 공정 및 특성에 관한 연구 (A Study on the ENIG Surface Finish Process and Its Properties)

  • 이홍기;손성호;이호영;전준미
    • 한국표면공학회지
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    • 제40권1호
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    • pp.32-38
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    • 2007
  • Ni coating layers were formed using a newly developed electroless Ni plating solution. The properties of Ni coating layer such as internal stress, hardness, surface roughness, crystallinity, solderability and surface morphology were investigated using various tools. Results revealed that internal stress decreased with plating time and reached $40N/mm^2$ at 20 minutes of the plating time. Hardness increased with increasing P content and thickness. Surface roughness of the pad decreased with Ni and Ni/Au plating. Crystallinity decreased with increasing P content. Solderability based on wettability decreased with Ni and Ni/Au plating. Based on surface morphology, it is expected that Ni coating layer formed using a newly developed electroless Ni plating solution is lower than that formed using a commercial electroless Ni plating solution in possibility of black pad occurrence.

무전해 Ni 도금에 의한 선택적 CONTACT HOLE 충전 (Selective Contact Hole Filling by electroless Ni Plating)

  • 우찬희;권용환;김영기;박종완;이원해
    • 한국표면공학회지
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    • 제25권4호
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    • pp.189-206
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    • 1992
  • The effect of activation and electroless nickel plating conditions on contact properties was investi-gated for selective electroless nickel plating of Si wafers in order to obtain an optimum condition of con-tact hole filling. According to RCA prosess, p-type silicon (100) surface was cleaned out and activated. The effects of temperature, DMAB concentration, time, and strirring were investigated for activation of p-type Si(100) surface. The optimal activation condition was 0.2M HF, 1mM PdCl2, 2mM EDTA,$ 70^{\circ}C$, and 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentra-tion, pH, and plating time were studied. The optimal plating condition found was 0.10M NiSO4.H2O, 0.11M Citrate, pH 6.8, $60^{\circ}C$, 30minutes. The contact resistance of films was comparatively low. It took 30minutes to obtain 1$\mu\textrm{m}$ thick film with 8mM DMAB concentration. The film surface roughness was improved with decreasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained at the condition of temperature $60^{\circ}C$ and pH 6.0. The micro-vickers hardness of film was about 800Hv. Plating rate of nickel on the hole pattern was slower than that of nickel on the line pattern.

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무전해 Ni-B 도금을 이용한 플라즈마 디스플레이 버스 전극의 확산 방지막 제조 (Fabrication of the Diffusion Barrier for Bus Electrode of Plasma Display by Electroless Ni-B Plating)

  • 최재웅;홍석준;이희열;강성군
    • 한국재료학회지
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    • 제13권2호
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    • pp.101-105
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    • 2003
  • In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

무전해 니켈 도금과 실리콘의 이방성 식각을 이용한 미세 가동 구조물의 제작방법에 관한 연구 (A Study of Micro Freestanding Structure Fabrication using Nickel Electroless Plating And Silicon Anisotropic Etching)

  • 김성혁;김용권;이재호;허진
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권6호
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    • pp.367-374
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    • 2000
  • This paper presents a method to fabricate freestanding structures by (100) silicon anisotropic etching and nickel electroless plating. The electroless plating process is simpler than the electroplating, and provides good coating uniformity and improved mechanical properties. Furthermore, the (100) silicon anisotropic etching in KOH solution with being aligned to <100> direction provides vertical (100) sidewalls on etched (100) surface. In this paper, the effects of the nickel electroless plating condition on the properties of electroless plated metal structures are investigated to apply fabrication of micro structures and then various micro structures are fabricated by nickel electroless plating. And then, the structures are released by silicon anisotropic etching in KOH solution with a large gap between the structure and the substrate. The fabricated cantilever structures are $210\mum$. wide, $5\mum$. thick and $15\mum$. over the silicon substrate, and the comb structure has the comb electrodes which are $4\mum$. wide and $4.3\mum$. thick separated by$1\mum$. It is released by silicon anisotropic etching in KOH solution. The gap between the structure and the substrate is $2.5\mum$.

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PET 필름기재의 구리 무전해도금에 있어서 초임계 CO2 유체가 도금 특성에 미치는 영향 (Effect of Added Supercritical CO2 on the Characteristics of Copper Electroless Plating on PET Film Substrate)

  • 이희대;김문선;김철경
    • Korean Chemical Engineering Research
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    • 제45권4호
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    • pp.384-390
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    • 2007
  • 본 연구는 $CO_2$ 초임계 유체를 도금액과 혼합하여 PET 필름 위에 무전해 구리도금을 실시하였으며 초임계 유체의 혼용조건에 따른 그 도금 효과를 비교하였다. 이산화탄소 초임계 유체와 도금액의 부피비는 1:9가 최적이였으며 초임계 유체가 10 vol% 이상이 되면 혼합액의 분산성이 불량해져 층분리가 발생하였다. 구리 무전해도금은 $25^{\circ}C$, 15 MPa 에서 수행된 구리막의 표면물성이 가장 균일하였다. 무전해 구리도금에서 도금액과 혼합시킨 초임계 유체의 역할은 단순히 용해도를 높여 주는 것이 아니라 도금막을 구성하는 구리입자를 1차 입자상태로 분산, 유지시킴을 확인하였다.