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http://dx.doi.org/10.3740/MRSK.2003.13.2.101

Fabrication of the Diffusion Barrier for Bus Electrode of Plasma Display by Electroless Ni-B Plating  

Choi, Jae-Woong (Div. Of Materials Science and Engineering, Hanyang Univ.)
Hong, Seok-Jun (Div. Of Materials Science and Engineering, Hanyang Univ.)
Lee, Hee-Yeol (Div. Of Materials Science and Engineering, Hanyang Univ.)
Kang, Sung-Goon (Div. Of Materials Science and Engineering, Hanyang Univ.)
Publication Information
Korean Journal of Materials Research / v.13, no.2, 2003 , pp. 101-105 More about this Journal
Abstract
In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.
Keywords
Plasma display; Bus electrode; Electroplating; Electroless Ni-B plating; Diffusion barrier;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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