• Title/Summary/Keyword: electrode length

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Electrical Breakdown Properties of Insulating Oils for oil-immersed transformer (유입변압기용 절연유의 절연파괴특성)

  • Lee, I.S.;Shin, H.T.;Lee, J.P.;Lee, S.W.;Hong, J.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.605-608
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    • 2001
  • With the intention of investigating the breakdown properties of oil-immersed transformer oils in temperature range of $20\sim100[^{\circ}C]$, we are made researches AC breakdown in the gap of $500\sim2500[{\mu}m]$. The classification for the physical properties of oil for oil-immersed transformer by FTIR and H-NMR experiments was confirmed to type of mineral oils. As the dependance of breakdown properties due to electrode gap length variation, breakdown voltage was found increasing according to the increase of gap, while dielectric strength was decreasing. As a result the characteristics for AC breakdown, It goes to prove that the breakdown voltage was increased to $90[^{\circ}C]$ but decreased over $90[^{\circ}C]$ in the temperature range. Also, breakdown voltage was found increasing in the increase of gap and the rising of temperature according to Weibull distribution.

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Pressure sensing of air flow using multi-walled carbon nanotubes (다중벽 탄소 나노튜브를 이용한 유동 압력 검출)

  • Song, Jin-Won;Lee, Jong-Hong;Lee, Eung-Sug;Han, Chang-Soo
    • Journal of Sensor Science and Technology
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    • v.16 no.5
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    • pp.377-383
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    • 2007
  • We describe the fabrication and characterization of a doubly clamped multi-walled carbon nanotube (MWNT). The device was assembled by an application of electric field in solution. The MWNT was clamped on end of metal trench electrodes in solution and deposited with additional platinum (Pt) on edge of electrode for firmly suspending the MWNT by focused ion beam (FIB). The MWNTs range of diameter and length were 100 to 150 nm and 1.5 to $2{\mu}m$, respectively. Electrical characteristics of fabricated devices were measured by I-V curve and impedance analysis. The mechanical deformation was observed by resistivity in high air pressure. Resonant frequency around 6.8 MHz was detected and resistivity was linearly varied according to the magnitude of air pressure. This device could have potential applications in nanoelectronics and various sensors.

Organic Thin-Film Transistors Fabricated on Flexible Substrate by Using Nanotransfer Molding

  • Hwang, Jae-Kwon;Dang, Jeong-Mi;Sung, Myung-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.287-287
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    • 2010
  • We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

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Effect of Surface Pyramids Size on Mono Silicon Solar Cell Performance

  • Kim, Hyeon-Ho;Kim, Su-Min;Park, Seong-Eun;Kim, Seong-Tak;Gang, Byeong-Jun;Tak, Seong-Ju;Kim, Dong-Hwan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.100.2-100.2
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    • 2012
  • Surface texturing of crystalline silicon is carried out in alkaline solutions for anisotropic etching that leads to random pyramids of about $10{\mu}m$ in size. Recently textured pyramids size gradually reduced using new solution. In this paper, we investigated that texture pyramids size had an impact on emitter property and front electrode (Ag) contact. To make small (${\sim}3{\mu}m$) and large (${\sim}10{\mu}m$) pyramids size, texturing times control and one side texturing using a silicon nitride film were carried out. Then formation and quality of POCl3-diffused n+ emitter in furnace compare with small and large pyramids by using SEM images, simulation (SILVACO, Athena module) and emitter saturation current density (J0e). After metallization, Ag contact resistance was measured by transfer length method (TLM) pattern. And surface distributions of Ag crystallites were observed by SEM images. Also, performance of cell which is fabricated by screen-printed solar cells is compared by light I-V.

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A Comparison between J0 and J1 Digital Linear Filters in Resistivity Soundings (비저항탐사에서 J0 및 J1 디지탈 선형필터의 비교)

  • Kim, Hee Joon
    • Economic and Environmental Geology
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    • v.18 no.1
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    • pp.41-47
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    • 1985
  • The filtering ability of $J_0$ and $J_1$ digital linear filters is compared by means of an adaptive linear filter. Any $J_0$ domain Hankel transform integral can be transformed mathematically into its corresponding $J_1$ domain integral. The apparent resistivities for any electrode configuration employed in resistivity soundings can be evaluated with a single $J_1$ filter. The $J_1$ filter usually has similar accuracy to, but shorter length than, the corresponding $J_0$ filter. The domain transformation from $J_0$ to $J_1$ enables us to use effective expressions of apparent resistivity, involving $J_1$ alone, not only for Schlumberger but also for dipole-dipole array.

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A HYDROGEN FUELLED V-8 ENGINE FOR CITY-BUS APPLICATION

  • Sierens, R.;Verhelst, S.
    • International Journal of Automotive Technology
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    • v.2 no.2
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    • pp.39-45
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    • 2001
  • Hydrogen is seen as one of the important energy vectors of the next century. Hydrogen as a renewable energy source, provides the potential for a sustainable development particularly in the transportation sector. Hydrogen driven vehicles reduce both local as well as global emissions. The laboratory of transporttechnology (University of Gent) converted a GM/Crusader V-8 engine for hydrogen use. Once the engine is optimised, it will be built in a low-floor midsize hydrogen city bus for public demonstration. For a complete control of the combustion process and to increase the resistance to backfire (explosion of the air-fuel mixture in the inlet manifold), a sequential timed multipoint injection of hydrogen and an electronic management system is chosen. The results as a function of the engine parameters (ignition timing. injection timing and duration, injection pressure) we given. Special focus is given to topics related to the use of hydrogen as a fuel: ignition characteristics (importance of electrode distance), quality of the lubricating oil (crankcase gases with high contents of hydrogen), oxygen sensors (very lean operating conditions), noise reduction (configuration and length of inlet pipes). The advantages and disadvantages of a power regulation only by the air to fuel ratio (as for diesel engines) against a throttle regulation (normal gasoline or gas regulation) are examined. Finally the goals of the development of the engine are reached: power output of 90 kW, torque of 300 Nm, extremely low emission levels and backfire-safe operation.

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A Study on the Electrical Characteristics of Pentacene Organic Thin Film Transistor using Organic Gate Insulator (유기물 게이트 절연체를 사용한 pentacene 유기 박막 트랜지스터의 전기적 특성에 관한 연구)

  • Kim, Yun-Myoung;Kim, Ok-Byoung;Kim, Jung-Soo;Kim, Young-Kwan;Zyung, Tae-Hyung
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.446-448
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    • 2000
  • Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

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Voltage waveform detection of discharge breaking process used pulsed-power technique (펄스파워 기술을 이용한 방전파쇄과정의 전압파형 검출)

  • Chung, Y.H.;Yoon, S.H.;Lee, Y.S.;Lee, D.H.;Kim, H.J.;Cho, J.S.
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2195-2197
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    • 1999
  • Electric breakdown in the liquid produces a spark channel. The energy input into the channel causes expansion of a vapor gas cavity. If the power of the discharge is high enough, this expansion is fast enough to produce a shock wave which propagates through the liquid to the subject of destruction. We focused our attention on the correlation between electric parameters and the characteristics of the flash caused by point to-point electrode discharge in the water. By varying firing voltage and gap length, we obtained the features of the flash : amplitude, pulse width, and so on. In this paper, We have known that there is a concrete interrelation between underwater firing voltage and photodiode output.

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Sensing Characteristics of ZnO-based Ethanol Gas Sensor on Ga-doped Nanowires by Hot Walled Pulsed Laser Deposition (온벽 펄스 레이저 증착법을 이용해 합성한 Ga 도핑된 산화아연계 나노선 에탄올 가스 센서의 특성)

  • Jung, Da-Woon;Kim, Kyoung-Won;Lee, Deuk-Hee;Debnath, Pulak Chandra;Kim, Sang-Sig;Lee, Sang-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.7
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    • pp.594-598
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    • 2011
  • We have investigated the sensing properties of ethanol gas sensor with pure ZnO and Ga-doped ZnO nanowires on Au coated (0001) sapphire substrates grown by hot walled pulsed laser deposition. Randomly aligned ZnO nanowires arrays were grown on a Au-electrode patterned under ambient conditions. ZnO nanowires have various sizes and shapes with a different substrate position inside a furnace. The average of length and diameter of the ZnO nanowires were $8\;{\mu}m$ and 100 nm respectively, and confirmed by field emission scanning electron microscopy. Sensitivity chanege characterization of the gas sensor was found that measured sensitivities of the ethanol gas sensors were 83.3% and 68.3% at $300^{\circ}C$ respectively.

Fabrication of Etched Graphene/CuO Nanowires as Field Effect Transistors

  • Hien, Vu Xuan;Kim, Se-Yun;Kim, MyeongEon;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.430-430
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    • 2013
  • Field effect transistor based on semiconductor nanowires has been attracting lots of concerns and studies of scientists because of its different characteristic comparing with other morphology like thin film. Nowadays, graphene is introducing a great promise as an active layer in field effect transistor due to its unique electronic and optoelectronic properties. Thus, a mix structure between etched graphene and semiconductor nanowires is believed to expose novel electrical characteristics. In this study, CuO nanowires (20~80 nm in diameter and $1{\sim}10{\mu}m$ length) were grown during oxidizing Cu foil at $450^{\circ}C$ for 24 h. Besides, 3-layersetched graphene was deposited on Cu foil at $1,000^{\circ}C$ using a feedstock of $CH_4$/$H_2$ mixed gas in CVD system. A structure of Ni/Au electrode + CuO nanowires + etched graphene was fabricated, afterward. Finally, field effect properties of the device was revealed and compared with individual devices of just nanowires and just graphene.

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