• Title/Summary/Keyword: electrode activation

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Influence of the Micropore Structures of PAN-based Activated Carbon Fibers on Nerve Agent Simulant Gas (DMMP) Sensing Property (PAN계 활성탄소섬유의 미세기공 구조가 신경작용제 유사가스(DMMP) 감응 특성에 미치는 영향)

  • Kang, Da Hee;Kim, Min-Ji;Jo, Hanjoo;Choi, Ye Ji;Lee, Young-Seak
    • Applied Chemistry for Engineering
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    • v.29 no.2
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    • pp.191-195
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    • 2018
  • In this study, the influence of microporous structures of activated carbon fibers (ACFs) on dimethyl methylphosphonate (DMMP) gas sensing properties as a nerve agent simulant was investigated. The pore structure was given to carbon fibers by chemical activation process, and an electrode was fabricated for gas sensors by using these fibers. The PAN based ACF electrode, which is an N-type semiconductor, received electrons from a reducing gas such as DMMP, and then electrical resistance of its electrode finally decreased because of the reduced density of electron holes. The sensitivity of the fabricated DMMP gas sensor increased from 1.7% to 5.1% as the micropore volume increased. It is attributed that as micropores were formed for adsorbing DMMP whose molecular size was 0.57 nm, electron transfer between DMMP and ACF was facilitated. In conclusion, it is considered that the appropriate pore structure control of ACFs plays an important role in fabricating the DMMP gas sensor with a high sensitivity.

High Temperature Electrical Conductivity of Perovskite La0.98Sr0.02MnO3 (페로프스카이트 $La_{0.98}Sr_{0.02}MnO_3$의 고온전기특성)

  • 김명철;박순자
    • Journal of the Korean Ceramic Society
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    • v.29 no.11
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    • pp.900-904
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    • 1992
  • High temperature electrical conductivity was measured for perovskite La0.98Sr0.02MnO3 at 200~130$0^{\circ}C$ as a function of Po2 and 1/T. Perovskite La1-xSrxMnO3 system is the typical oxygen electrode in solid oxide fuel cell (SOFC). Acetate precursors were used for the preparation of mixed water solution and the calcined powders were reacted with Na2CO3 flux in order to obtain highly reactive powders of perovskite La0.98Sr0.02MnO3. The relative density was greatly increased above 90% because of the homogeneous sintering. From the conductivity ($\sigma$)-temperature and conductivity-Po2 at constant temperature, the defect structure of La0.98Sr0.02MnO3 was discussed. From the slope of 1n($\sigma$) vs 1/T, the activation energy of 0.069 and 0.108eV were evaluated for above 40$0^{\circ}C$, respectively. From the relationship between $\sigma$ and Po2, it was found that the decomposition of La0.98Sr0.02MnO3 was occurred at 10-15.5 atm(97$0^{\circ}C$) and 10-11 atm(125$0^{\circ}C$). It is supposed that the improvement of p-type conductivity may be leaded by the increase of Mn4+ concentration through the substitution of divalent/monovalent cations for La site in LaMnO3.

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Electrochemical Activation of Nitrate Reduction to Nitrogen by Ochrobactrum sp. G3-1 Using a Noncompartmented Electrochemical Bioreactor

  • Lee, Woo-Jin;Park, Doo-Hyun
    • Journal of Microbiology and Biotechnology
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    • v.19 no.8
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    • pp.836-844
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    • 2009
  • A denitrification bacterium was isolated from riverbed soil and identified as Ochrobactrum sp., whose specific enzymes for denitrification metabolism were biochemically assayed or confirmed with specific coding genes. The denitrification activity of strain G3-1 was proportional to glucose/nitrate balance, which was consistent with the theoretical balance (0.5). The modified graphite felt cathode with neutral red, which functions as a solid electron mediator, enhanced the electron transfer from electrode to bacterial cell. The porous carbon anode was coated with a ceramic membrane and cellulose acetate film in order to permit the penetration of water molecules from the catholyte to the outside through anode, which functions as an air anode. A non-compartmented electrochemical bioreactor (NCEB) comprised of a solid electron mediator and an air anode was employed for cultivation of G3-1 cells. The intact G3-1 cells were immobilized in the solid electron mediator, by which denitrification activity was greatly increased at the lower glucose/nitrate balance than the theoretical balance (0.5). Metabolic stability of the intact G3-1 cells immobilized in the solid electron mediator was extended to 20 days, even at a glucose/nitrate balance of 0.1.

The Dependence of Temperature and Frequency for the Dissipation Factor in Liquid Dielectrics (액체절연체(실리콘유) 유전정접의 온도및 주파수의존성)

  • 이돈희;소병문;이수원;김왕곤;홍진웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.85-89
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    • 1993
  • Silicone oil exhibits the properies of both organic and inorganic substances and, thus, it has many superior properties such as higher thermal resistance and lower thermal oxidation level when compared to other dielectric liquids. In order to investigate the dielectric characteristics, dielectric liquids of viscosity 1 [cSt] is chosen as the specimen and experiment is performed in the temperature range of 20∼65 [$^{\circ}C$] and frequency range of 30∼1${\times}$10$\^$6/ [Hz] respectively. As a result, the observed linear decrease in dissipation factor at the frequency range below 3 [kHz] is due to the influence of frequency, whereas the increase in dissipation factor at higher frequency range is contributed by electrode's resistance. At a fixed frequency of 30 [kHz], increasing temperature results in higher peak value and wide width of the absorption curve. This is due to the increase in dipole and viscosity. As temperature increases, dipole moment is decreased from 0.98 to 0.64 [debye]. The activation energy which causes the relaxation and loss of dielectric is obtained about 15 [kcal/mole].

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The Electrical Behavior of Plasma Sprayed Al2O3-TiO2 Coatings (플라즈마 용사된 Al2O3-TiO2 코팅의 전기적 특성)

  • Park, Sang-Jun;Lee, Sung-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.12
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    • pp.788-793
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    • 2017
  • Electrical behaviors of plasma-sprayed $Al_2O_3-TiO_2$ coatings have been investigated in terms of their $TiO_2$ content. On increasing the $TiO_2$ content from 6 to 30 wt%, the DC electrical conductivity increased by several orders of magnitude. From impedance spectroscopy analysis, the total conductivity of the grains and grain boundaries and their respective activation energies were determined without the electrode effects that could impede ionic transfer. An electron transference number was also estimated, ranging between 6.5% and 7.3% for 13 wt% $TiO_2$ and between 0.4% and 0.7% for 30 wt% $TiO_2$ in the coating. Because of the high electronic contribution to the total conductivity, the $Al_2O_3-TiO_2$ coating could be a new candidate material to obtain superior electrical conductivity as well as corrosion and wear resistances.

A Study of Fly Ash Resistivity Characteristics Generated from the Coal Fired Power Plant as a Function of Water Concentration and Temperature (석탄 화력발전소에서 발생되는 석탄회의 수분함유량 및 온도에 따른 비저항성 특성 연구)

  • Ku, Jae-Hyun;Lee, Jung-Eun;Lee, Jae-Keun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.24 no.4
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    • pp.526-532
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    • 2000
  • Recent studies have been directed toward obtaining a better understanding of the application of electrostatic precipitators to collect fly ash particles produced in a coal-fired power plant. Electrical resistivity can be described as the resistance of the collected dust layer to the flow of electrical current and is an important property for the collection efficiency in the electrostatic precipitator. In this paper, fly ash resistivity as a function of temperature up to $450^{\circ}C$ has been experimentally investigated using the resistivity meter consisted of the movable electrode, dust cup, and furnace. Resistivity was found to increase with increased temperature up to $200^{\circ}C$ due to the reduction of water concentration and then gradually decrease with increased temperature due to the activation of electrons. As the resistivity of fly ash in the flue gas temperature of $150^{\circ}C$ was measured >$10^{10}$ ohm cm, the efficiency of fly ash removal in the electrostatic precipitator might be expected to be low due to back-corona phenomenon. Flue gas conditioning in the electrostatic precipitator to reduce the resistivity of fly ash as required.

Expression and Characterization of G Protein-activated Inward Rectifier $K^+$ Channels in Xenopus Oocytes

  • Kim, Han-Seop;Lee, Chang-Ho;Min, Churl K.
    • Animal cells and systems
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    • v.2 no.4
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    • pp.471-476
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    • 1998
  • The G protein-activated inwardly rectifying $K^+$ channel (GIRK1) was coex-pressed in Xenopus oocytes along with the $5-HT_{1A}$ receptor, a 7-helix receptor known to be coupled to $K^+$ channels in many neural tissues. Thus, the activation of the $5-HT_{1A}$ receptor by its agonist leads to the opening of GIRK1. The GIRK1 current was measured using the two electrode voltage clamp technique with bath application of 5-HT in the presence of various external potassium concentrations $[K^+]_0$. GIRK1 showed a strong inward rectification since only hyperpolarizing voltages evoked inward currents. $K^{+}$ was the major ion carrier as evidenced by about 44㎷ voltage shift corresponding to a 10-fold external 〔$K^+$〕 change. 5-HT induced a concentration-dependent inward $K^+$ current ($EC_{50}{\equation omitted}10.7nM$) which was blocked by $Ba^{2+}$. Pertussis toxin (PTX) pre-treatment reduced the $K^+$ current by as much as about 70%, suggesting that PTX-sensitive G protein ($G_i or G_o$ type) are involved in the $5-HT_{1A}$ receptor-GIRK1 coupling in Xenopus oocytes.

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Changes in Sympathetic Nervous System Responses of Healthy Adult Women with Changes in the Stimulus Intensity of High Frequency Transcutaneous Electrical Nerve Stimulation (고빈도 경피신경전기자극의 자극강도에 따른 정상 성인여성 교감신경성 반응의 변화)

  • Choi, Yoo-Rim;Lee, Jeong-Woo
    • The Journal of Korean Physical Therapy
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    • v.22 no.1
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    • pp.61-66
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    • 2010
  • Purpose: The purpose of this study was to investigate the change in sympathetic nervous system responses of healthy adult women with changes in stimulus intensity of high frequency transcutaneous electrical nerve stimulation. Methods: Twenty-four healthy subjects (women) received high frequency electrical stimulation of the forearm. The subjects were randomly assigned to one of two groups; a low intensity stimulation group (n=12) and a high intensity stimulation group (n=12). The electrode attachment was arranged on the forearm of the dominant arm and the electricity stimulus time was 20 minutes. Measured items included skin conductance, pulse rate, skin temperature, and respiration rate. Each was measured at 4 times. Results: Skin conductance and skin temperature showed significant group by time interactions, though there were no significant group and time effects. There were no significant differences according to time, group effect, and a group by time interaction in pulse and respiration rates. Conclusion: High frequency and high intensity electrical stimulation may be helpful for the improvement of sudomotor function through the activation of the sympathetic nervous system. Also, high frequency and low intensity electrical stimulation may be helpful for the reduction of sudomotor function via inhibition of the sympathetic nervous system.

Polysilicon-emitter, self-aligned SiGe base HBT using solid source molecular beam epitaxy (고상원 분자선 단결정 성장법을 이용한 다결정 실리콘 에미터, 자기정렬 실리콘 게르마늄 이종접합 쌍극자 트랜지스터)

  • 이수민;염병렬;조덕호;한태현;이성현;강진영;강상원
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.2
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    • pp.66-72
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    • 1995
  • Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

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Anisotropic Silicon Etching Using $RuO_2$ Thin Film as a Mask Layer by TMAH Solution ($RuO_2$를 마스크 층으로 TMAH에 의한 이방성 실리콘 식각)

  • 이재복;오세훈;홍경일;최덕균
    • Journal of the Korean Ceramic Society
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    • v.34 no.10
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    • pp.1021-1026
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    • 1997
  • RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

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