• Title/Summary/Keyword: electro-migration

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The Study on Thermal Stability of Ti-Capped Ni Monosilicide (Ti-capped Ni monosilicide의 열적 안정성에 관한 연구)

  • 이근우;유정주;배규식
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.106-106
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    • 2003
  • 반도체 소자의 고집적화에 따라 채널길이와 배선선 폭은 점차 줄어들고, 이에 따라 단채널효과, 소스/드레인에서의 기생저항 증가 및 게이트에서의 RC 시간지연 증가 등의 문제가 야기되었다. 이를 해결하기 위하여 자기정렬 실리사이드화(SADS) 공정을 통해 TiSi2, CoSi2 같은 금속 실리사이드를 접촉 및 게이트 전극으로 사용하려는 노력이 진행되고 있다. 그런데 TiSi2는 면저항의 선폭의존성 때문에, 그리고 CoSi2는 실리사이드 형성시 과도한 Si소모로 인해 차세대 MOSFET소자에 적용하기에는 한계가 있다. 반면, NiSi는 이러한 문제점을 나타내지 않고 저온 공정이 가능한 재료이다. 그러나, NiSi는 실리사이드 형성시 NiSi/Si 계면의 산화와 거침성(roughness) 때문에 높은 누설 전류와 면저항값, 그리고 열적 불안정성을 나타낸다. 한편, 초고집적 소자의 배선재료로는 비저항이 낮고 electro- 및 stress-migration에 대한 저항성이 높은 Cu가 사용될 전망이다. 그러나, Cu는 Si, SiO2, 실리사이드로 확산·반응하여 소자의 열적, 전기적, 기계적 특성을 저하시킨다. 따라서 Cu를 배선재료로 사용하기 위해서는 확산방지막이 필요하며, 확산방지재료로는 Ti, TiN, Ta, TaN 등이 많이 연구되고 있다.

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Temperature effect on multi-ionic species diffusion in saturated concrete

  • Damrongwiriyanupap, Nattapong;Li, Linyuan;Limkatanyu, Suchart;Xi, Yunping
    • Computers and Concrete
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    • v.13 no.2
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    • pp.149-171
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    • 2014
  • This study presents the mathematical model for predicting chloride penetration into saturated concrete under non-isothermal condition. The model considers not only diffusion mechanism but also migration process of chloride ions and other chemical species in concrete pore solution such as sodium, potassium, and hydroxyl ions. The coupled multi-ionic transport in concrete is described by the Nernst-Planck equation associated with electro-neutrality condition. The coupling parameter taken into account the effect of temperature on ion diffusion obtained from available test data is proposed and explicitly incorporated in the governing equations. The coupled transport equations are solved using the finite element method. The numerical results are validated with available experimental data and the comparison shows a good agreement.

Study of defect characteristics by electrochemical plating thickness in copper CMP (Copper CMP에서 Electrochemical Plating 두께에 따른 Defect 특성 연구)

  • Kim, Tae-Gun;Kim, Nam-Hoon;Kim, Sang-Yong;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.125-126
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    • 2005
  • Recently semiconductor devices are required more smaller scale and more powerful performance. For smaller scale of device, multilayer structure is proposed. And, for the higher performance, interconnection material is change to copper, because copper has high EM(Electro-migration)and low resistivity. Then copper CMP process is a great role in a multilayer formation of semiconductor. Copper process is different from aluminum process. ECP process is one of the copper processes. In this paper, we focused on the defects tendency by copper thickness which filled using ECP process. we observed hump high and dishing. Conclusively, hump hight reduced at copper thickness increased Also dishing reduced.

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Design of Low-Noise and High-Reliability Differential Paired eFuse OTP Memory (저잡음 · 고신뢰성 Differential Paired eFuse OTP 메모리 설계)

  • Kim, Min-Sung;Jin, Liyan;Hao, Wenchao;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.10
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    • pp.2359-2368
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    • 2013
  • In this paper, an IRD (internal read data) circuit preventing the reentry into the read mode while keeping the read-out DOUT datum at power-up even if noise such as glitches occurs at signal ports such as an input signal port RD (read) when a power IC is on, is proposed. Also, a pulsed WL (word line) driving method is used to prevent a DC current of several tens of micro amperes from flowing into the read transistor of a differential paired eFuse OTP cell. Thus, reliability is secured by preventing non-blown eFuse links from being blown by the EM (electro-migration). Furthermore, a compared output between a programmed datum and a read-out datum is outputted to the PFb (pass fail bar) pin while performing a sensing margin test with a variable pull-up load in consideration of resistance variation of a programmed eFuse in the program-verify-read mode. The layout size of the 8-bit eFuse OTP IP with a $0.18{\mu}m$ process is $189.625{\mu}m{\times}138.850{\mu}m(=0.0263mm^2)$.

Effect of the Kinds and Replacement Ratios of Mineral Admixtures on the Development of Concrete Resistance against the Penetration of Chloride Ions (혼화재 종류 및 치환율이 콘크리트의 내염성능 향상에 미치는 영향에 관한 연구)

  • Kim Young-Jin;Lee Sang-Soo;Kim Dong-Seuk;Yoo Jae-Kang
    • Journal of the Korea Concrete Institute
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    • v.16 no.3 s.81
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    • pp.319-326
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    • 2004
  • This paper investigates the effect of the concrete containing mineral admixtures(pozzolanic materials such as fly-ash, ground granulated blast-furnace slag, silica fume and meta kaolin) on the resistance properties to chloride ion invasion. The purposed testing procedure was applied to the concrete replaced mineral admixtures for 3${\~}$4 replacement ratios under water-binder ratios ranged from 0.40 to 0.55. For the electro-migration test, Tang and Nilsson's method was used to estimate the diffusion coefficient of chloride ion. As a results, the water-binder ratios, kinds of mineral admixtures and replacement ratios, water curing periods had a great effect on the diffusion coefficient of chloride ion, and the optimal replacement ratios had a limitation for each mineral admixtures. Also, the use of mineral admixtures by mass(replacement of OPC) enhance the resistance ability against chloride penetration compared with the plain concrete. The compressive strength was shown related to the diffusion coefficient of chloride ion, the compressive strength increases with the diffusion coefficient of chloride ion decreasing. Below the 50 MPa, the variation of diffusion coefficient of concrete replaced mineral admixtures was bigger than that of plain concrete.

Development of a continuous electrolytic system with an ion exchange membrane for pH-control with only one discharge of electrolytic solution and its characteristics (단일 전해액 배출만을 가지는 pH조절용 연속식 이온 교환막 전해 시스템의 개발과 그 특성)

  • Kim Kwang-Wook;Kim In-Tae;Park Geun-Il;Lee Eil-Hee
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.3 no.4
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    • pp.269-278
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    • 2005
  • In order to produce only a pH-controlled solution without discharging any unwanted solution, this work has developed a continuous electrolytic system with a pH-adjustment reservoir being placed before an ion exchange membrane-equipped electrolyzer, where as a target solution was fed into the pH-adjustment reservoir, some portion of the solution in the pH-adjustment reservoir was circulated through the cathodic or anodic chamber of the electrolyzer depending on the type of the ion exchange membrane used, and some other portion of the solution in the pH-adjustment reservoir was discharged from the electrolytic system through the other counter chamber with its pH being controlled. The internal circulation of the pH-adjustment reservoir solution through the anodic chamber in the case of using a cation exchange membrane and that through the cathodic chamber in the case of using an anion exchange membrane could make the solution discharged from the other counter chamber effectively acidic and basic, respectively. The phenomena of the pH being controlled in the system could be explained by the electro-migration of the ion species in the solution through the ion exchange membrane under a cell potential difference between anode and cathode and its consequently-occurring non-charge equilibriums and electrolytic water- split reactions in the anodic and cathodic chambers.

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Deign of Small-Area Differential Paired eFuse OTP Memory for Power ICs (Power IC용 저면적 Differential Paired eFuse OTP 메모리 설계)

  • Park, Heon;Lee, Seung-Hoon;Jin, Kyo-Hong;Ha, Pan-Bong;Kim, Young-Hee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.2
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    • pp.107-115
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    • 2015
  • In this paper, a small-area 32-bit differential paired eFuse OTP memory for power ICs is designed. In case of smaller number of rows than that of columns for the OTP memory cell array, a scheme for the cell array reducing the number of SL driver circuits requiring their larger layout areas by routing the SL (source line) lines supplying programming currents for eFuse links in the row direction instead of the column direction as well as a core circuit is proposed. In addition, to solve a failure of being blown for non-blown eFuse links by the electro-migration phenomenon, a regulated voltage of V2V ($=2V{\pm}0.2V$) is used to a RWL (read word line) driver circuit and a BL (bit line) pull-up driver circuit. The layout size of the designed 32-bit eFuse OTP memory is $228.525{\mu}m{\times}105.435{\mu}m$, which is confirmed to be 20.7% smaller than that of the counterpart using the conventional cell array routing, namely $197.485{\mu}m{\times}153.715{\mu}m$.

Studies on the Transport of Acetic Acid by Electrodialysis (전기투석에 의한 초산의 이동특성 연구)

  • 최동민;구윤모
    • KSBB Journal
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    • v.11 no.3
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    • pp.360-366
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    • 1996
  • Electrodialysis of acetic acid was studied to find out the trend of the transport of organic acids through ultrafiltration and ion exchange membranes. The net transport rate of acetic acid was determined from the electro-migration velocity relative to the electro-osmotic flow rate through the membrane. Electro-osmosis flows through ultrafiltration membranes were from the anodic side to the cathodic side in the presence of electric field. The surface of ultrafiltration membrane was measured by the electro-osmotic flow to be charged negatively. Different transport behaviors of acetic acid were found with the ultrafiltration membranes of different materials. In general, regenerated cellulose membranes (YM series) were more effective than polysulfone membranes (PM series) for the transport of acetic acid. The transport of acetic acid was affected by electric strength, distance between the electrodes, surface area of electrode, temperature, and pore size of membrane. The transport rate through the ion exchange membrane was 1.5 to 3 times of those through the ultrafiltration membranes at the constant current of 150 mA in the experimental ranges. The transport rate of acetic acid through the ion exchange membrane increased by 10% with a pulse electric field of 10 sec/hr.

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Electro-migration Phenomenon in Flip-chip Packages (플립칩 패키지에서의 일렉트로마이그레이션 현상)

  • Lee, Ki-Ju;Kim, Keun-Soo;Suganuma, Katsuaki
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.4
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    • pp.11-17
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    • 2010
  • The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.

A Study on the Reliability Prediction about ECM of Packaging Substrate PCB by Using Accelerated Life Test (가속수명시험을 이용한 Packaging Substrate PCB의 ECM에 대한 신뢰성 예측에 관한 연구)

  • Kang, Dae-Joong;Lee, Hwa-Ki
    • Journal of the Korea Safety Management & Science
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    • v.15 no.1
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    • pp.109-120
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    • 2013
  • As information-oriented industry has been developed and electronic devices has come to be smaller, lighter, multifunctional, and high speed, the components used to the devices need to be much high density and should have find pattern due to high integration. Also, diverse reliability problems happen as user environment is getting harsher. For this reasons, establishing and securing products and components reliability comes to key factor in company's competitiveness. It makes accelerated test important to check product reliability in fast way. Out of fine pattern failure modes, failure of Electrochemical Migration(ECM) is kind of degradation of insulation resistance by electro-chemical reaction, which it comes to be accelerated by biased voltage in high temperature and high humidity environment. In this thesis, the accelerated life test for failure caused by ECM on fine pattern substrate, $20/20{\mu}m$ pattern width/space applied by Semi Additive Process, was performed, and through this test, the investigation of failure mechanism and the life-time prediction evaluation under actual user environment was implemented. The result of accelerated test has been compared and estimated with life distribution and life stress relatively by using Minitab software and its acceleration rate was also tested. Through estimated weibull distribution, B10 life has been estimated under 95% confidence level of failure data happened in each test conditions. And the life in actual usage environment has been predicted by using generalized Eyring model considering temperature and humidity by developing Arrhenius reaction rate theory, and acceleration factors by test conditions have been calculated.