• Transactions on Electrical and Electronic Materials
• /
• 제9권4호
• /
• pp.137-142
• /
• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• 전기의세계
• /
• 제23권6호
• /
• pp.49-55
• /
• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• 한국안전학회지
• /
• 제18권3호
• /
• pp.64-68
• /
• 2003

ITO_{(n)}/Si_{(p)}$ solar cell is fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The maximum output of fabricated solar cell is obtained when the composition of the thin film is consisted of indium oxide 91[mole %] and tin oxide 9(mole %). The solar cell electrical charateristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min].

• 한국전기전자재료학회논문지
• /
• 제33권2호
• /
• pp.88-92
• /
• 2020

Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO₂ and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.

• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 2002년도 학술대회논문집
• /
• pp.293-296
• /
• 2002

This paper describes the instantaneous current resultant type load parallel high frequency resonant inverter consisting of three unit half-bridge serial and parallel resonant inverter can be used as power source of induction heating. This proposed inverter can reduce distribution of the switching current because of using the current of serial resonant circuit to the input current of the parallel one. The analysis of the proposed circuit is generally described by using the normalized parameters. Also, the principle of basic operating and the its characteristics are estimated by the parameters such as switching frequency($\mu$), load resistance(λ). Experimental results are presented to verify theoretical discussion. This proposed inverter will can be practically used as a power supply in various fields as induction heating application, DC-DC converter etc.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.366-370
• /
• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• 동력기계공학회지
• /
• 제10권1호
• /
• pp.71-76
• /
• 2006

This paper aims to study several type heaters which are mica heater, film heater, quartz heater and rod heater and to get an temteraturel and electrical characteristics. These four type heaters have a merit in many fields than present electric heater with nichrome wire. Carbon and mica plate heater have higher heat efficiency and less electromagnetic waves. Also it has been reported that far infrared ray emission from this heater is good for our health. Additionally heating element is thin and lighter plate. For these reasons, they will be widely used to various application such as room-heating or manufacturing goods. Experimental result confirmed that when 220V current authorized, the temperature, electric current, electric power and the resistance rise to stationary state in early stage. Moreover, the temperatures and electric characteristics show a good stability.

• 한국식품영양학회지
• /
• 제27권1호
• /
• pp.112-119
• /
• 2014

Ohmic heating uses electric resistance heat which occurs equally and rapidly inside food when the electrical current is transmitted into. Prior to the study, we have researched the potato starch's thermal property changes during ohmic heating. Comparing with conventional heating, the gelatinization temperature and the range of potato starch treated by ohmic heating are increased and narrowed respectively. Herein, we have studied thermal property changes of wheat, corn, potato and sweet potato starch by ohmic heating as well as conventional heating. And then we measure the water holding capacity of starches. Annealing of starch is a heat treatment method heated at 3~4% below the gelatinization point. This treatment changes the starch's thermal property. In the DSC analysis of this study, the $T_o$, $T_p$, $T_c$ of all starch levels have increased, and the $T_c$-$T_o$ narrowed. In the ohmic heating, the treatment sample is extensively changed but not with the conventional heating. From the ohmic treatment, increases from gelatinization temperature are potato ($8.3^{\circ}C$) > wheat ($5.3^{\circ}C$) > corn ($4.9^{\circ}C$) > sweet potato ($4.5^{\circ}C$), and gelatinization ranges are potato ($7.9^{\circ}C$), wheat ($7.5^{\circ}C$), corn ($6.1^{\circ}C$) and sweet potato ($6.8^{\circ}C$). In the case of conventional treatment, water holding capacity is not changed with increasing temperature but the ohmic heating is increased. Water holding capacity is related to the degree of gelatinization for starch. This result show that when treated with below gelatinization temperature, the starches are partly gelatined by ohmic treatment. When viewing the results of the above, ohmic treatment is enhanced by heating and generating electric currents to the starch structure.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.530-530
• /
• 2012

Many practical applications of carbon nanotubes(CNTs) have been proposed and there have been attempts to utilize CNT films as transparent electrodes for solar cells and displays. Our group has considered the use of the CNT film as a thin film heater (TFH) and proposed it for the first time and reported the thermal behavior of the TFH made of single walled CNTs. However, due to the relatively high electrical resistance of the CNT film, using the TFH in application areas requiring high heat flux has been a difficult problem. To overcome this obstacle, we adopted a 'branch electrodes' concept to increase the film conductance dramatically. If two branch electrodes are inserted into a TFH whose original electrical resistance is R, the total resistance will be reduced to R/9. Because of the increased aspect ratio, the resistance of each segmented TFH will be reduced to R/3. Furthermore, since they are connected in parallel, the total resistance reduces to R/9. This could be extended to n branch electrodes, and the total resistance of the film will be reduced to R/(n+1)2, if the resistance of electrodes are negligibly small. We fabricated the heaters with different number of branch electrodes. The number of branch electrodes of the fabricated heaters are 0, 2, 4, 8 and their electrical resistance are 101.4, 39.5, 20.0, $15.4{\Omega}$, respectively. We applied 20V to each heater and monitored the temperature variations. We could achieve high heating temperature even with low voltage supply. This technique could be applied to relevant industrial applications which need high power film heater.

• International Journal of Air-Conditioning and Refrigeration
• /
• 제6권
• /
• pp.1-13
• /
• 1998

The basic heat transfer process that occurs in a building can best be illustrated by an electrical circuit network. Present paper reports the dynamic simulation of annual energy consumption in an office building by the thermal resistance capacitance network method. Unsteady thermal behaviors and annual energy consumption in an office building were examined in detail by solving the simultaneous circuit equations of thermal network. The results are used to evaluate the accuracy of the modified BIN method for the energy consumption analysis of a large building. Present thermal resistance-capacitance method predicts annual energy consumption of an office building with the same accuracy as that of response factor method. However, the modified BIN method gives 15% lower annual heating load and 25% lower cooling load than those from the present method. Equipment annual energy consumptions for fan, boiler and chiller in the HVAC system are also calculated for various control systems as CAV, VAV, FCU+VAV and FCU+CAV. FCU+CAV system appears to consume minimum annual energy among them.