Browse > Article

Annealing Effect on the Electrical Characteristics for Oxide Semiconductor ITO_{(n)}/Si_{(p)}$ Solar Cell  

김용운 (세경대학 전기전자계열)
Publication Information
Journal of the Korean Society of Safety / v.18, no.3, 2003 , pp. 64-68 More about this Journal
Abstract
ITO_{(n)}/Si_{(p)}$ solar cell is fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The maximum output of fabricated solar cell is obtained when the composition of the thin film is consisted of indium oxide 91[mole %] and tin oxide 9(mole %). The solar cell electrical charateristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min].
Keywords
short current; open voltage; vaccum deposition; method;
Citations & Related Records
연도 인용수 순위
  • Reference
1 T. Feng, A. K., Ghosh and Fishman., Apply, phys., Lett, pp.34, 35, 198, 266, 1979
2 J. B. Dubow, D. E. Burk and J. R. Sites, Appl, Phys., Lett,. pp. 29, 494, 1976
3 A. K. Ghosh, J. Appl., Phys., 49(6). pp. 3490-3498, June. 1978   DOI   ScienceOn
4 J. Shewchun, J. Appl, Phys., 50(4). pp. 1832-2837, 1979
5 Stephen Franz, Vol. 6, No 2, pp. 101-123
6 Tom. Feng., J. Appl., Phys., 50(12), pp. 8070-8074, 1979   DOI   ScienceOn
7 T. R. Nash, IEEE, Trans, Ed 24, No 4. pp. 468-472. April, 1977
8 J. Shewchun, J. Appl., Phys., 50(4), April, 1979
9 A. K. Ghosh, J. Appl, Phys., 49(6), pp. 3490-3498, 1978   DOI   ScienceOn
10 Hisao Kato, Japan, J. R. Sites, Appl, Phys., Vol. 15, pp. 1819-1820, 1976