• Journal of Welding and Joining
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• 제20권2호
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• pp.90-94
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• 2002

FC-BGA has advantages over other interconnection methods including high I/O counts, better electrical performance, high throughput, and low profile. But, FC-BGA has a lot of reliability issues. The 2nd level solder joint reliability of the FC-BGA with large chip on laminate substrate was studied in this paper. The purpose of this study is to discuss solder joint failures of 2nd level thermal cycling test. This work has been done to understand the influence of the structure of package, the properties of underfill, the properties and thickness of bismaleimide tiazine substrate and the temperature range of thermal cycling on 2nd level solder joint reliability. The increase of bismaleimide tiazine substrate thickness applied to low modulus underfill was improve of solder joint reliability. The resistance of solder ball fatigue was increased solder ball size in the solder joints of FC-BGA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제38권3호
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• pp.155-165
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• 2001

By suggesting a mixed-mode transient simulation method utilizing a 2-dimensional device simulator, we have analyzed CDM ESD Phenomena in CMOS chips, which utilize NMOS transistors as ESD protection devices. By analyzing the simulation results, the mechanisms leading to device failures in CDM discharge and the differences in discharge characteristics with different polarities of stored charges have been explained in detail. The effects of changes in interconnection resistance values on the gate-oxide failure at input buffers, which is the most serious problem in CDM discharge, have been examined. Also improvements in discharge characteristics with addition of the NMOS transistor for input-buffer protection have been examined.

• Journal of the Microelectronics and Packaging Society
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• 제19권4호
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• pp.19-23
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• 2012

Silicon substrate for light emitting diodes (LEDs) has been the tendency of LED packaging for improving power consumption and light output. In this study, a low cost and high throughput Si through via fabrication has been demonstrated using a wet etching process. Both a wet etching only process and a combination of wet etching and dry etching process were evaluated. The silicon substrate with Si through via fabricated by KOH wet etching showed a good electrical resistance (${\sim}5.5{\Omega}$) of Cu interconnection and a suitable thermal resistance (4 K/W) compared to AlN ceramic substrate.

• Journal of the Microelectronics and Packaging Society
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• 제20권2호
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• pp.1-9
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• 2013

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

• The Transactions of the Korean Institute of Electrical Engineers D
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• 제54권10호
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• pp.615-619
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• 2005

Token coherence protocol has many good reasons against snooping/directory-based protocol in terms of latency, bandwidth, and complexity. Token counting easily maintains correctness of the protocol without global ordering of request which is basis of other dominant cache coherence protocols. But this lack of global ordering causes starvation which is not happening in snooping/directory-based protocols. Token coherence protocol solves this problem by providing an emergency mechanism called persistent request. It enforces other processors in the competition (or accessing same shared memory block, to give up their tokens to feed a starving processor. However, as the number of processors grows in a system, the frequency of starvation occurrence increases. In other words, the situation where persistent request occurs becomes too frequent to be emergent. As the frequency of persistent requests increases, not only the cost of each persistent matters since it is based on broadcasting to all processors, but also the increased traffic of persistent requests will saturate the bandwidth of multiprocessor interconnection network. This paper proposes a new request mechanism that defines order of requests to reduce occurrence of persistent requests. This ordering mechanism has been designed to be decentralized since centralized mechanism in both snooping-based protocol and directory-based protocol is one of primary reasons why token coherence protocol has advantage in terms of latency and bandwidth against these two dominant Protocols.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.53-58
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• 2003

The Wafer Level Packaging is one of the most important technologies in the semiconductor industry today. Its primary advantages are its small form factor and low cost potential for manufacturing including test procedure. The CASIO's WLP samples, application example and the structure are shown in Fig.1, 2&3. There are dielectric layer , under bump metal, re-distribution layer, copper post , encapsulation material and terminal solder .The key technologies are 'Electroplating thick copper process' and 'Unique wafer encapsulation process'. These are very effective in getting electrical and mechanical advantages of package. (Fig. 4). CASIO and CMK are developing a new System Packaging technology called the Embedded Wafer Level Package (EWLP) together. The active components (semiconductor chip) in the WLP structure are embedded into the Printed Wiring Board during their manufacturing process. This new technical approach has many advantages that can respond to requirements for future mobile products. The unique feature of this EWLP technology is that it doesn't contain any solder interconnection inside. In addition to improved electrical performance, EWLP can enable the improvement of module reliability. (Fig.5) The CASIO's WLP Technology will become the effective solution of 'KGD problem in System Packaging'. (Fig. 6) The EWLP sample shown in Fig.7 including three chips in the WLP form has almost same structure wi_th SoC's. Also, this module technology are suitable for RF and Analog system applications. (Fig. 8)

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권4호
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• pp.295-301
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• 2008

Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• 제26권7호
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• pp.52-58
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• 2012

In this study, we have investigated the effect of the solar power generation facilities on the power quality of interconnected solar power generation system. When the solar power generation facility was connected to the distribution system, whether the solar power generation is under operation or not, Peak factor of current was increased to 0.033[%], Frequency is deviated from $60{\pm}0.2$[Hz] and also Short term flicker indication($P_{st}$) increased to 0.213[p.u.] compare with the disconnected situation. Harmonic current [%] in orders was 11.42[%] maximum under 11th orders and was 7.861[%] between 11th and 17th orders. These values were about 3 or 4 times compared with "the power system interconnection technique standards" at the same situation above. Therefore, we could confirmed that the solar power generation facility, when it was connected to the existing distribution system, made bad influence on the power qualities such as the peak factor of current, frequency regulation, short term flicker indication($P_{st}$) and harmonic current [%] in orders etc.

• Structural Monitoring and Maintenance
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• 제1권3호
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• pp.293-308
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• 2014

In the aeronautical environment, numerous regulatory and communication protocols exist that cover interconnection of on-board equipment inside the aircraft. Developed and implemented by the airlines since the 1960s, these communication systems are reliable, strong, certified and able to contact different sensors distributed throughout the aircraft. However, the scenario is slightly different in the structural health monitoring (SHM) field as the requirements and specifications that a global SHM communication system must fulfill are distinct. The number of SHM sensors installed in the aircraft rises into the thousands, and it is impossible to maintain all of the SHM sensors in operation simultaneously because the overall power consumption would be of thousands of Watts. This design of a new communication system must consider aspects as management of the electrical power supply, topology of the network for thousands of nodes, sampling frequency for SHM analysis, data rates, selected real-time considerations, and total cable weight. The goal of the research presented in this paper is to describe and present a possible integration scheme for the large number of SHM sensors installed on-board an aircraft with low power consumption. This paper presents a new communications system for SHM sensors known as the Bi-Instruction Link Bi-Operator (BILBO).