• 한국안전학회지
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• 제20권1호
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• pp.87-93
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• 2005

In this paper, we analyzed ignition characteristics of combustible material and the waveform of power dissipation, voltage and current by poor contact. And the surface structure of plug by poor contact was analyzed. In the results of experiment, the heat generated by poor contact and ignited the combustible material on power cord sets. The insulation material was molten and carbonized by the heat conduction though plug pit and voids were formed inside of insulation material. The waveform of voltage and power dissipation distorted because of a growth of oxidation by poor contact. In particular, in case that load was big load, the waveform of voltage and power dissipation severely distorted as with the passage of time. The surface of plug pin was changed from erosion mark to welding mark according to big load. The results will be applied to the cause analysis of electrical disaster.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.112-114
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• 1988

W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.

• 한국세라믹학회지
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• 제53권4호
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• pp.411-416
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• 2016

Benzothienobenzothiophene ($C_8-BTBT$) is a soluble organic small molecule material with high crystallinity resulting from its strong self-organizing properties. In addition, the high mobility and easy fabrication of $C_8-BTBT$ make it very attractive in terms of organic thin-film transistors. In this work, we made $C_8-BTBT$ thin films by using the zone-casting method; we also used an organic solvent to treat the devices with solvent vapor annealing to improve the electrical properties. As a result, we confirmed improved mobility, threshold voltage, and subthreshold swing after solvent vapor annealing. To prove the effect of solvent vapor annealing, we used the simultaneous extraction model to extract the contact resistance from the current-voltage curve. We confirmed that the electrical properties improved with decreasing contact resistance.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.294-297
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• 2016

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.440-444
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• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.86-91
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• 2007

Contact material is widely used as electrical parts. Ag-CdO has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. Then Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to investigate the effect of Te additional that affects the formation of the oxide layer on the surface and the formation of oxide in matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Te) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. Specimens were examined and analyzed by Transmission electron microscopy(TEM), energy dispersive X-ray spectroscopy(EDS) and Vickers hardness. As a result, internal oxidation was completed even at $600^{\circ}C$. Te forms coarse $In_{2}TeO_{6}$ phase and makes fine and well dispersed $SnO_{2}$ Phase. 0.3 wt% Te shows favorable properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.52-55
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• 1989

The properties of sintered Ag-SnO$_2$contacts which contain the second oxide were investigated with hardeness, workability, electrical conductivity and are erosion. Ag-SnO$_2$contacts containing ZnO or Bi$_2$O$_3$have most excellent workability and arc erosion endurance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.391-394
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• 2000

EPDM/silicone blend was prepared with polyorganosiloxane compatibilizer for out-door polymer insulation used to shed. Each blend had various weight ratios, 100/0, 90/10, 70/30, 50/50, 30/70, 10/90, and 0/100 as EPDM to silicone, and electrical and tracking characteristics were studied with the method of IEC 60587. And also, tracking properties and contact angle related to UV-weathering period were studied to understand the degree of degradation of blend after 1000 h UV-weathering.