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http://dx.doi.org/10.4191/kcers.2016.53.4.411

Solvent Vapor Annealing Effects in Contact Resistances of Zone-cast Benzothienobenzothiophene (C8-BTBT) Transistors  

Kim, Chaewon (School of Advanced Materials Engineering, Kookmin University)
Jo, Anjae (School of Advanced Materials Engineering, Kookmin University)
Kim, Heeju (School of Advanced Materials Engineering, Kookmin University)
Kim, Miso (Center for Safety Measurement, Korea Research Institute of Standards and Science (KRISS))
Lee, Jaegab (School of Advanced Materials Engineering, Kookmin University)
Lee, Mi Jung (School of Advanced Materials Engineering, Kookmin University)
Publication Information
Abstract
Benzothienobenzothiophene ($C_8-BTBT$) is a soluble organic small molecule material with high crystallinity resulting from its strong self-organizing properties. In addition, the high mobility and easy fabrication of $C_8-BTBT$ make it very attractive in terms of organic thin-film transistors. In this work, we made $C_8-BTBT$ thin films by using the zone-casting method; we also used an organic solvent to treat the devices with solvent vapor annealing to improve the electrical properties. As a result, we confirmed improved mobility, threshold voltage, and subthreshold swing after solvent vapor annealing. To prove the effect of solvent vapor annealing, we used the simultaneous extraction model to extract the contact resistance from the current-voltage curve. We confirmed that the electrical properties improved with decreasing contact resistance.
Keywords
$C_8-BTBT$; Zone-casting; Solvent vapor annealing; Contact resistance; Organic field effect transistors(OTFTs);
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Times Cited By KSCI : 2  (Citation Analysis)
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