• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1069-1071
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• 1995

The electrical properties of Al/TiN/Ti contact are investigated at submicron contacts. The contact resistance and contact leakage current are dependent on metallization, surface dopant concentration, semiconductor surface treatment and contact plug ion implantation. In this paper, the contact resistance and contact leakage current are studied according to surface dopant concentration, semiconductor surface treatment and contact plug ion implantation at 0.8 micron contact. The contact resistance and contact leakage current increases with increasing substrate ion concentration. HF cleaning represents high contact resistance but low contact leakage current while CDE cleaning represents low contact resistance but high contact leakage current. Contact plug ion implantation decreases contact resistance but increases contact leakage current. Specially, RTA represents good electrical properties.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1013-1015
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• 1995

The electrical properties of Al/TiN/Ti contact according to post anneal ins conditions are investigated at submicron contacts. $N^+$ contact resistance increases with increasing alloy temperature while $P^+$ contact resistance slightly decreases. The contact tentage current increases wi th increasing alloy temperature for both $N^+$ and $P^+$ contacts. The contact resistance and leakage current of $N^+$ contact increases with increasing alloy tide. $P^+$ contact resistance decreases with increasing alloy time but $P^+$ contact tentage current increases. The contact resistance and contact leakage current increases with increasing alloy cycles for both $N^+$ and $P^+$ contacts.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.78-88
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• 1994

The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.63-67
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• 2021

In this paper, we investigated the surface properties of polymer insulators to improve electrical insulation performance. First, after washing the polymer insulator in various ways, its contact angle was increased, thereby improving the hydrophobic properties and electrical insulation properties. In addition, TiO2 thin films, which have been used as a photocatalytic material and have been applied to the polymer insulator surface of to enhance the surface and electrical insulating properties. For the sputtering method, the contact angle after coating the TiO2 thin film increased with increasing RF power, but it was lower compared to that before coating, indicating that the hydrophobic properties of the surface were slightly deteriorated. Consequently, the electrical properties of the polymer-insulating material were maintained or improved after the TiO2 thin-film coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• International Journal of Safety
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• v.4 no.2
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• pp.18-23
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• 2005

There are many electrical connections in the electric apparatus and most fires due to a fault contact result from a failure or misuse of electric apparatus and installation. The fault contact happens between electrical connections by the loose and the mechanical vibration. In this paper, we have investigated thermal and electrical properties of screwed electric contacts due to the mechanical vibration. The exciter was connected to a signal generator and power amplifier that provided the vibration frequency and amplitude. The vibration, temperature and voltage data were sent to a data acquisition system (DAQ). In the case that fault contact took place, the arc happened between the screwed electric contact and electric wire, heat due to the arc was transmitted to the adjacent insulators, for which the oxide could be generated more. In addition, a spark was generated and the insulator began to melt. Thus, the possibility of electrical fire became the highest in this case. Finally, when the fault contact takes place due to vibration, the hazard of an electric accident is very high.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.104-108
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• 2016

To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO₂=1:1, the ZnO, SnO₂ and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO₂ and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO₂ was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO₂ and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO₂.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2348-2352
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• 2017

The electrical contact characteristics including temperature rise, contact resistance and arc erosion rate of the $Ag-SnO_2$ materials with increased $SnO_2$ content were investigated during the repeated make-and-break operations. The thickness of arcing melting layer reduces by half and the arc erosion rate decreases more than 70% under 10000 times operations at AC 10 A with the $SnO_2$ content increasing from 15 wt.% to 45 wt.%, on one hand, temperature rise and contact resistance increase obviously but could be reduced to the same order of conventional $Ag-SnO_2$ materials by increasing the contact force. The microstructure evolution and the effect of $SnO_2$ on the arc erosion, contact resistance were analyzed.