Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.04b
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- Pages.133-136
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- 2004
Ohmic Contact Formation of SiC for Harsh Environment MEMS Using a TiW Thin-film
TiW 박막을 이용한 극한 환경 MEMS용 3C-SiC의 Ohmic contact 형성
- Chung, Soo-Yong (DongSeo Uni.) ;
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Noh, Sang-Soo
(Daeyang Electric Co.)
;
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Chung, Gwiy-Sang
(DongSeo Uni.)
- Published : 2004.04.24
Abstract
In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.