• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.861-863
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• 2003

In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

• ETRI Journal
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• v.31 no.6
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• pp.636-641
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• 2009

ZnO nanofibers were electro-spun from a solution containing poly 4-vinyl phenol and Zn acetate dihydrate. The calcination process of the ZnO/PVP composite nanofibers brought forth a random network of polycrystalline wurtzite ZnO nanofibers of 30 nm to 70 nm in diameter. The electrical properties of the ZnO nanofibers were governed by the grain boundaries. To investigate possible applications of the ZnO nanofibers, their CO and $NO_2$ gas sensing responses are demonstrated. In particular, the $SnO_2$-deposited ZnO nanofibers exhibit a remarkable gas sensing response to $NO_2$ gas as low as 400 ppb. Oxide nanofibers emerge as a new proposition for oxide-based gas sensors.

• Journal of the Korean Geotechnical Society
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• v.15 no.1
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• pp.185-196
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• 1999

A laboratory experiment was performed to examine the relationship between resistivity and ionic components in the pore water of a sand by using soil resistivity test box and STING-Rl. The resistivity measurement was performed with the concentration changes of ionic components. Also, the resistivity change was evaluated for multiple components. The results showed that the resistivity of Arsenic was less than other heavy metals. In the case of complex components, resistivity ranges depended on the resistivity of components existed in the pore water.

• ETRI Journal
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• v.37 no.3
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• pp.523-532
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• 2015

Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip-chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine-pitch solder bumping has been widely studied. In this study, high-volume solder-on-pad (HV-SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are $28.3{\mu}m$, $31.7{\mu}m$, and $26.3{\mu}m$, respectively. It is expected that the HV-SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine-pitch flip-chip bonding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.296-297
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• 2005

We have investigated the quench performance of shunt reactors in the parallel connection of resistive type superconducting fault current limiter (SFCL) components based on YBCO films. To increase voltage rating, components are connected in series and to increase current level, they are connected in parallel. This method has cauesd the unbalanced quench between each components. To improve the problem, we have compared the quench properties between the current limiting components without and with shunt reactors connected in parallel. To improve the quench performance, across individual SFCL components connected the shunt reactor in parallel. The components with shunt reactors successfully produced simultaneous quench, resulting from the bypass of the fault current in the direction of the shunt reactor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.799-802
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• 2011

In this study, SiC single-crystal ingots were prepared on two seed crystals with different doping level by using the physical vapor transport (PVT) technique; then, SiC crystal wafers sliced from the grown SiC ingot were systematically investigated to find the effect of seed doping level on the doping concentration and crystal quality of the SiC. To exclude extra effects induced by adjustment of the process parameters, we simultaneously grew the SiC crystals on two seed crystals with different level, which were fabricated from previous two SiC crystal ingots.

• Journal of Power Electronics
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• v.11 no.4
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• pp.576-582
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• 2011

This paper presents a novel control strategy for selective compensation of power quality (PQ) problems, depending upon the limited rating of voltage source inverters (VSIs), through a unified power quality conditioner (UPQC) in a three-phase four-wire distribution system. The UPQC is realized by the integration of series and shunt active power filters (APFs) sharing a common dc bus capacitor. The shunt APF is realized using a three-phase, four-leg voltage source inverter (VSI), while a three-leg VSI is employed for the series APF of the three-phase four-wire UPQC. The proposed control scheme for the shunt APF, decomposes the load current into harmonic components generated by consumer and distorted utility. In addition to this, the positive and negative sequence fundamental frequency active components, the reactive components and harmonic components of load currents are decomposed in synchronous reference frame (SRF). The control scheme of the shunt APF performs with priority based schemes, which respects the limited rating of the VSI. For voltage harmonic mitigation, a control scheme based on SRF theory is employed for the series APF of the UPQC. The performance of the proposed control scheme of the UPQC is validated through simulations using MATLAB software with its Simulink and Power System Block set toolboxes.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.51 no.1
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• pp.15-22
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• 2002

This paper proposes a new power flow method for distribution system analysis by modifying the conventional back/forward sweep method using symmetrical components. Since the proposed method backward and forward sweeps with the variables expressed by symmetrical components, this method reduces computation time for matrix calculations; therefore, it is able to reduce the computational burden for real-time distribution network analysis. The proposed method was also developed to effectively analyze the unbalanced distribution system installing AVR(Auto Voltage Regulator), shunt capacitors. The proposed algorithm was compared with the conventional Back/forward Sweep method by applying both methods to three phase unbalanced distribution system of IEEE 123-bus model, and the test results showed that the proposed method would outperformed the conventional method in real-time distribution system analysis.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.709-718
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• 2019

The international nuclear industry has undergone a lot of changes since the Fukushima, Chernobyl and TMI nuclear power plant accidents. However, there are still large and small component deficiencies at nuclear power plants in the world. There are many causes of electrical equipment defects. There are also factors that cause component failures due to human errors. This paper analyzed the root causes of failure and types of human error in 300 cases of electrical component failures. We analyzed the operating experience of electrical components by methods of root causes in K-HPES (Korean-version of Human Performance Enhancement System) and by methods of human error types in HuRAM+ (Human error-Related event root cause Analysis Method Plus). As a result of analysis, the most electrical component failures appeared as circuit breakers and emergency generators. The major causes of failure showed deterioration and contact failure of electrical components by human error of operations management. The causes of direct failure were due to aged components. Types of human error affecting the causes of electrical equipment failure are as follows. The human error type group I showed that errors of commission (EOC) were 97%, the human error type group II showed that slip/lapse errors were 74%, and the human error type group III showed that latent errors were 95%. This paper is meaningful in that we have approached the causes of electrical equipment failures from a comprehensive human error perspective and found a countermeasure against the root cause. This study will help human performance enhancement in nuclear power plants. However, this paper has done a lot of research on improving human performance in the maintenance field rather than in the design and construction stages. In the future, continuous research on types of human error and prevention measures in the design and construction sector will be required.

• ETRI Journal
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• v.35 no.3
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• pp.425-430
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• 2013

In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ($BV_{DS}$) and on-state current ($I_{D,MAX}$), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ($SiO_2$) of a conventional RSO power MOSFET is changed to a multilayered insulator ($SiO_2/SiN_x/TEOS$). The inserted $SiN_x$ layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as $BV_{DS}$ and $I_{D,MAX}$, simulation studies are performed on the function of the gate configurations and their bias conditions. $BV_{DS}$ and $I_{D,MAX}$ are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This $I_{D,MAX}$ variation indicates the specific on-resistance modulation.