• 마이크로전자및패키징학회지
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• 제23권2호
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• pp.1-10
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• 2016

This paper reports the trends of researches and technologies of electronic packaging using graphene. Electronic packaging is to provide the signal and electrical current among electronic components, to remove the heat in electronic systems or components, to protect and support the electronic components from external environment. As the required functions and performances of electronic systems or components increase, the electronic packaging has been intensively attracted attention. Therefore, technologies such as miniaturization, high density, Pb-free material, high reliability, heat dissipation and so on, are required in electronic packaging. Recently, graphene, which is a single two-dimensional layer of carbon atoms, has been extensively investigated because of its superior mechanical, electrical and thermal properties. Until now, many studies have been reported the applications using graphene such as flexible display, electrode, super capacitor, composite materials and so on. In this paper, we will introduce and discuss various studies on recent technologies of electronic packaging using graphene for solving the required issues.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.882-885
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• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.87-89
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• 1994

The effects of low molecular weight components of LDPE and sample molding condition were investigated to find the orgins for heterocharge in LDPE without any addtives. Low molecular weight chains of LDPE encourages the formation of heterocharge by being charged and migrating the counter electrode. The formation of heteroohage in LDPE was also effected by sample preparation process and the kind of a moling film. When PET film is used as a molding layer, the carbonyl, which may lead to increase the heterocharge, formed at surface of LDPE.

• Nuclear Engineering and Technology
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• 제56권5호
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• pp.1863-1873
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• 2024

In the Korean domestic nuclear industry, to analyze the reliability of instrumentation and control (I&C) systems, the failure rates of the electronic components constituting the I&C systems are predicted based on the MIL-HDBK-217F standard titled 'Reliability Prediction of Electronic Equipment'. Based on these predicted failure rates, the mean time to failure of the I&C systems is calculated to determine the replacement period of the I&C systems. However, this conventional approach to the prediction of electronic component failure rates assumes that factors affecting the failure rates such as ambient temperature and operating voltage are static constants. In this regard, the objective of this study is to propose a prediction method for the remaining useful life (RUL) of electronic components considering mean time to failure calculations reflecting dynamic environments, such as changes in ambient temperature and operating voltage. Results of this study show that the RUL of electronic components can be estimated depending on time-varying temperature and electrical stress, implying that the RUL of electronic components can be predicted under dynamic stress conditions.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.100-102
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• 2014

$Ag(Ta,Nb)O_3$ materials have a perovskite structure with a low loss tangent. These materials have been widely researched for their applications as high-frequency, passive components. Also, $Ag(Ta,Nb)O_3$ materials have weak frequency dispersion with high dielectric permittivity which gives them enormous potential for use in electronic components, including the filters, and embedded capacitors. Therefore, our research will discuss the structural and electrical relaxation properties of $Ag(Ta_{0.8}Nb_{0.2})O_3$ ceramics for device applications. We will investigate using X-ray diffraction to understand their structural properties and will analyze voltage dependent leakage current and timedependent relaxation behavior to understand their material properties.

• Transactions on Electrical and Electronic Materials
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• 제8권5호
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• pp.211-214
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• 2007

Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

• Journal of international Conference on Electrical Machines and Systems
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• 제3권3호
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• pp.248-251
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• 2014

As more vehicles become equipped with advanced electronic control systems, more consideration is needed with regards to automotive safety issues related to the effects of electromagnetic waves. Unwanted electromagnetic waves from the antenna, electricity and other electronic devices cause the performance and safety problem of automotive components. In general, Power Integrity and Signal Integrity analysis have been widely used, but these analyses have stayed PCB level. PCB base analysis is different from radiated emission TEST condition so its results are used just for reference. This paper proposes EMC optimization technology using module level 3-dimensional radiation simulation process closed to fundamental test conditions. If module level EMC analysis, which is proposed in this study, is applied to all automotive electronics systems, unexpected EMC noise will be prevented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.68-71
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• 1993

본 연구에서는 자기적분형 자계센서의 감쇠시간특성과 주파수 응답특성에 대해 조사하였으며, 감쇠시간은 4.4[ms]이고, 측정가능한 주파수대역은 40[Hz]에서 1[kHz]이다. 또한, 적절하게 저항과 콘덴서의 용량을 조절하여 전기기기에 대한 측정도 가능함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.125-125
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• 2010

The Hybrid Fault current limit combined the semiconductor switching components, for example IGBT, with mechanical fast switch reduced mechanical and thermal stress on electrical machines, for example circuit breaker, transformer, and so on, in the electric network. We had focused on reducing the voltage stress of the semiconductor switching components by the mechanical fast switch. As a result, we could dramatically reduce amount of semiconductor switching components only using parallel arrangement of them, not series.