• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.285-292
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• 1992

Ultrathin(8nm) oxynitride (SiOxNy) film have been formed on Si(100) by rapid thermal processing(RTP) in $O_2$and $N_2$O as reactants. Compared with conventional furnace $O_2$ oxide, the oxynitride dielectrics shows better characteristics of I-V and TDDB, and less flat-band voltage shift. The oxynitride has a behavior of Fowler-Nordheim tunneling in the region of V 〉${\varphi}_0$ simialr to pure Si$O_2$oxide. The relative dielectric constant of oxynitride is higher than that of conventional pure oxide. Excellent diffusion harrier property to dopant(B$F_2$) is also observed. Nitrogen depth profiles by SIMS, AES, and XPS show nitrogen pile - up at Si$O_2$/Si interface, which can explain the improved properties of oxynitride dielectrics.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.75-80
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• 1995

In order to fabricate the piezoelectric thin film of the PZT-PNN ternary compound, the metal alkoxides were used as starting materials. The electrical and crystalline properties of the thin film were evaluated. The X- RD study shows that the crystallization of the film is optimized at $550^{\circ}C$ of sintering temperature. According to the D-E hysterisis curve, the coercive field is 28.8 kV /cm, and the remanent polariztion is $18.3\;{\mu}C/cm^{2}$. The break down voltages of the thin films are $76.0\;{\sim}\;27.0\;MV/m$. When the sintering temperature is raised, the break down voltage is lowered. As a result of measuring the C-V characteristic curve of the ternary compound piezoelectric thin film, the relative dielectric constants are 406 for the composition (50:40:10), 1084 for the composition (50:30:20), 723 for the composition (45:35:20) and 316 for the composition (40:40:20).

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.453-458
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• 1994

$(Ba_{0.5}Sr_{0.5)/TiO_3$(BST) thin films were prepared for the application of 256 Mb DRAM by RF magnetron sputtering. The crystallinity of BST thin films increased with increasing deposition tempera lure. The composition of thin films was $(Ba_{0.48}Sr_{0.48)/TiO_{2.93}$ Pt/Ti barrier layer suppressed the diffusion of Si into BST layer. The films showed a dielectric constant of 320 and a dissipation factor of 0.022 at 100 kHz. the change of capacitance of the films with applied voltage was small, showing paraelectric property. The charge storage density and leakage current density were 40fC/$\mu \textrm{m}^{2}$ and 0.8$\mu A/\textrm{cm}^2$, respectively at a field of 0.15 MV/cm. The BST films obtained by RF magnetron sputtering appeared to be potential thin film capacitors for 256 Mb DRAM application.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.135-140
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• 2002

In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.

• Polymer(Korea)
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• v.35 no.5
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• pp.375-377
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• 2011

$PbTiO_3$/P(VDF/TrFE) 0~3 composites thin films with 0.10 and 0.13 of ceramic volume fraction factor have been fabricated by two-step spin coating technique and analyzed. 0~3 connectivity of $PbTiO_3$/P(VDF/TrFE) composites film was observed successfully by SEM micrography. The SEM picture confirmed 0~3 connectivity. And, in all the properties, 0~3 $PbTiO_3$/P(VDF/TrFE) composites film was superior to P(VDF/TrFE) copolymer. Therefore, with a good low-dielectric constant and a high pyroelectric coefficient, the composite thin films can be used for a new pyroelectric infrared sensor of higher performance.

• Journal of Adhesion and Interface
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• v.22 no.4
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• pp.153-157
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• 2021

Graphene, a two-dimensional carbon allotrope, has outstanding mechanical and electrical properties. In particular, the charge carrier mobility of graphene is known to be about 100 times higher than that of silicon, and it has received attention as a core material for next-generation electronic devices. However, graphene is very sensitive to environmental conditions, especially vulnerable to moisture or oxygen. It becomes a disadvantage in that the stability of the graphene-based electronic device, so various attempts are being made to solve this problem. In this work, we report a method to greatly improve the stability by controlling the surface energy of the polymer layer used for transferring the insulating layer of the graphene field-effect transistor. As the surface energy of the polymer used as the insulating layer was lowered, the stability could be improved by effectively controlling the adsorption of impurities in the atmosphere such as water molecules or oxygen.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.171-181
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• 2013

Recently, ground penetrating radar(GPR) has been widely used in detecting metallic and nonmetallic buried landmines and a number of related researches have been reported. A novel preprocessing method is proposed in this paper to flag potential locations of buried mine-like objects from GPR array measurements. GPR operates by measuring the reflection of an electromagnetic pulse from discontinuities in subsurface dielectric properties. As the GPR pulse propagates in the geologic medium, it suffers nonlinear attenuation as the result of absorption and dispersion, besides spherical divergence. In the proposed algorithm, a logarithmic transformed regression model which successfully represents the time-varying signal amplitude of the GPR data is estimated at first. Then, background signals may be densely distributed near the regression model and candidate signals of targets may be far away from the regression model in the time-amplitude space. Based on the observation, GPR signals are decomposed into candidate signals of targets and background signals using residuals computed from the estimated value by regression and the measurement of GPR. Candidate signals which may contain target signals and noise signals need to be refined. Finally, targets are detected through the refinement of candidate signals based on geometric signatures of mine-like objects. Our algorithm is evaluated using real GPR data obtained from indoor controlled environment and the experimental results demonstrate remarkable performance of our mine-like object detection method.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.