• 제목/요약/키워드: electrical & electronic engineering

검색결과 11,773건 처리시간 0.039초

AlGaN/GaN-on-Si Power FET with Mo/Au Gate

  • Kim, Hyun-Seop;Jang, Won-Ho;Han, Sang-Woo;Kim, Hyungtak;Cho, Chun-Hyung;Oh, Jungwoo;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.204-209
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    • 2017
  • We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

Nano-and-Micro Mixture Composites에대한 절연파괴 Weibull Plot 특성 연구 (Weibull Plot of Electrical Breakdown Strength for Nano-and-Micro Mixture Composites)

  • 박재준;이창훈;김정호;조대령;이대균;이상협;김재봉
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1378_1380
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    • 2009
  • 절연파괴 강도에대한 특성분석을 위해 와이블 plot을 이용하였다. ENMMC에서 실란처리와 미처리특성에서 실란처리된 결과 형상파라미터가 상대적으로 높은 값을 나타내었다. 이는 절연파괴결과가 균질함을 분명하게 나타낸 결과이다. 또한 스케일파리미터에서도 처리된 결과가 상대적으로 높은 결과를 보이고 있다. 나노입자 충진함량에 대한 효과에서도 체적비로 6.2vol%가 24.87vol%보다 월등하게 높은 형상파리미터와 스케일 파리미터를 나타내었다. 현장에서는 B10의 수명이 누적확률(63.2%)보다 오히려 유효한 평가자료 라고 사료된다. 역시 실란처리 된 결과가 미처리된 것에 비하여 그리고 나노입자 충진함량이 적을수록 높은 결과를 나타내었다. 이로서 중전기기 산업절연재료로서 향후 전망을 크게 할 것으로 본다.

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기포 제거 공정을 통한 유연한 디스플레이 합착 면의 투과율 및 접착력 향상 (Enhancement of Transmittance and Adhesion of Flexible Display Adhesion Surface by Bubble Removing Process)

  • 김정수;장경수;;박희준;신동기;이윤정;이준신
    • 한국전기전자재료학회논문지
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    • 제31권5호
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    • pp.330-334
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    • 2018
  • With the development of the Internet of Things, the use of flexible displays has become widespread. In particular, the use of curved, bendable, and rollable displays is increasing. Flexible display production processes include various important components such as lamination material, flexible substrates, and adhesives. Among them, improvement of the lamination process comprises a large proportion of efforts for further development. In this paper, we attempt to improve the transmittance of the display substrate by performing a bubble removal process after adhesion. The transmittance of the glass substrate with the bubble removal process was 5~12% higher than that of the substrate without the bubble removal process. The fill-strength after the bubble removal process was improved by 21.4%, and the shear-strength was improved by 43.9%.

A Study on Electro-optical Characteristics of the UV Aligned FFS Cell on the Organic Layer

  • Han, Jeong-Min;Ok, Chul-Ho;Hwang, Jeoung-Yeon;Kim, Byoung-Yong;Kang, Dong-Hun;Kim, Jong-Hwan;Kim, Young-Hwan;Han, Jin-Woo;Lee, Sang-Keuk;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • 제8권3호
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    • pp.135-138
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    • 2007
  • In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

Catalytic Growth and Properties of Carbon Nanotubes from Fe-Mo/MgO by Chemical Vapor Deposition

  • Woo, Jong-Chang;Kim, Kyoung-Tae;Kim, Gwan-Ha;Kim, Jong-Sik;Kim, Jong-Gyu;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제8권5호
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    • pp.206-210
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    • 2007
  • Carbon nanotubes(CNTs) are largely synthesized on Fe catalysts by catalytic chemical vapor deposition. The various shapes and compositions of these nanostructure CNTs were obtained by controlled parameters such as the reaction temperature, gas-mixing ratio. The influence of these parameters is investigated, together with observations of the produced materials after the purification processes. A diameter of CNTs, range from 2 to 10 nm, closely correlated with the size of the catalyst particle found attached to the tube end. The yield of CNTs was estimated to be 88.5 % and the purities of CNTs thus obtained were more than 80 %. The experimental results were documented with field emission scanning electron microscopy and raman spectroscopy and transmission electron microscopy, both before and after the purification.

Liquid Crystal Orientation Properties on Homogeneous Polymer Surface by Various Alignment Methods

  • Kim, Young-Hwan;Lee, Kang-Min;Kim, Byoung-Yong;Oh, Byeong-Yun;Han, Jeong-Min;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • 제10권1호
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    • pp.16-19
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    • 2009
  • We have studied the liquid crystal alignment properties for various alignment methods on the homogeneous polyimide surface. Suitable liquid crystal alignment for one-side alignment cell on the polyimide surface by all alignment method was observed. Highly pre-tilt angle of the NLC for both-side rubbing cell was measured. But, low pre-tilt angle of the NLC for one-side ion beam and UV irradiation cell was observed. We consider that the pre-tilt angle of NLC for one-side ion beam and UV irradiation on the PI surface is lower than that of the PI surface with rubbing. Also, the suitable transmittance-voltage curves for the one-side rubbing TN-LCD on the PI surface with one-side UV irradiation were measured. Also, good response time characteristics of the one-side rubbing TN-LCD on the polyimide surface with one-side UV irradiation can be measured.

Low Dropout Voltage Regulator Using 130 nm CMOS Technology

  • Marufuzzaman, Mohammad;Reaz, Mamun Bin Ibne;Rahman, Labonnah Farzana;Mustafa, Norhaida Binti;Farayez, Araf
    • Transactions on Electrical and Electronic Materials
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    • 제18권5호
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    • pp.257-260
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    • 2017
  • In this paper, we present the design of a 4.5 V low dropout (LDO) voltage regulator implemented in the 130 nm CMOS process. The design uses a two-stage cascaded operational transconductance amplifier (OTA) as an error amplifier, with a body bias technique for reducing dropout voltages. PMOS is used as a pass transistor to ensure stable output voltages. The results show that the proposed LDO regulator has a dropout voltage of 32.06 mV when implemented in the130 nm CMOS process. The power dissipation is only 1.3593 mW and the proposed circuit operates under an input voltage of 5V with an active area of $703{\mu}m^2$, ensuring that the proposed circuit is suitable for low-power applications.

Polar Anchoring Strength and Surface Ordering in NLC by the Washing Process on Rubbed Polymer Surfaces Containing Trifluoromethyl Moiety

  • Lee, Sang-Keuk;Lee, Joon-Ung;Han, Jeong-Min;Hwang, Jeoung-Yeon;Seo, Dae-Shik;Paek, Seung-Kwon
    • Transactions on Electrical and Electronic Materials
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    • 제3권4호
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    • pp.36-40
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    • 2002
  • The polar anchoring strength and surface ordering in a NLC,4-n-pentyl-4'-cyanobiphenyl (5CB), on a rubbed polyimide (PI) surface containing trifluoromethyl moiety were studied. The large extrapolation length de of 5CB for washing process of water was measured at RS=114 mm. The polar anchoring energy of 5CB on the rubbed PI surface is decreased by the washing process. Also, the polar anchoring energy of 5CB increases with the rubbing strength on the PI surface. The surface ordering of 5CB for all washing processes is smaller than the non-washing process; it is attributed to the washing process.